Abstract: A display device includes a light emitting element disposed on a substrate, a first transistor which controls a driving current flowing in the light emitting element, a second transistor which supplies a data voltage to a gate electrode of the first transistor, a first-third transistor and a second-third transistor connected in series between the gate and drain electrodes of the first transistor, a first charge injection layer adjacent to a drain electrode of the first-third transistor electrically connected to the gate electrode of the first transistor on a semiconductor region of the first-third transistor, and a second charge injection layer adjacent to a source electrode of the second-third transistor integrally formed with the drain electrode of the first transistor on a semiconductor region of the second-third transistor. A charge injection area of the first charge injection layer is greater than a charge injection area of the second charge injection layer.

Abstract: A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode material on the treated surface of the first carbon electrode material. The second carbon electrode material may have a thickness that is greater than a thickness of the first carbon electrode material.

Abstract: A camera monitor system includes: a panel disposed outside a vehicle, a fixing part fixed to an inner side of the panel, a camera assembly disposed at the fixing part and selectively accommodated in an opening of the panel, and a link unit coupled to the fixing part to transmit driving force of a driving unit to the camera assembly so that the camera assembly selectively protrudes to the outside of the panel.

Abstract: A display device includes a substrate, a semiconductor layer disposed on the substrate, and including a first channel portion, a second channel portion, a connecting portion disposed between the first channel portion and the second channel portion, and electrode regions, a first insulating layer disposed on the semiconductor layer, a gate conductor disposed on the first insulating layer and including a first gate electrode overlapping the first channel portion and a second gate electrode overlapping the second channel portion, signal lines disposed on the substrate, a first electrode electrically connected to at least one of electrode regions of the semiconductor layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, and the first channel portion and the second channel portion of the semiconductor layer each have a first width greater than a second width of the connecting portion.

Abstract: A memory controller may include: a request checker identifying memory devices corresponding to requests received from a host among the plurality of memory devices and generating the identified device information on memory devices to perform operations corresponding to the requests; a dummy manager outputting a request for controlling a dummy pulse to be applied to channels of selected memory devices according to the device information among the plurality of channels; and a dummy pulse generator sequentially applying the dummy pulse to the channels coupled to the selected memory devices, based on the request for controlling the dummy pulse. A memory controller may include an idle time monitor outputting an idle time interval of the memory device and a clock signal generator generating a clock signal based on the idle time interval and outputting the clock signal to the memory device through the channel to perform a current operation.

Abstract: A semiconductor memory device with an improved electric characteristic and reliability is provided. The semiconductor memory device including a substrate including an active region defined by device separation film, the active region including a first part and second parts, the second parts being on two opposite sides of the first part, respectively a bit line extending on the substrate and across the active region, and a bit line contact between the substrate and the bit line and connected to the first part of the active region may be provided. The bit line contact includes a first ruthenium pattern, and a width of upper surface of the first ruthenium pattern is smaller than a width of bottom surface of the first ruthenium pattern.

Abstract: The semiconductor device includes a substrate, first and second active patterns extending in a first direction, the second active pattern spaced apart from the first active pattern in a second direction different from the first direction, a gate electrode extending in the second direction, a first and second source/drain region each on one side of the gate electrode, a first and second source/drain contact each extending in the second direction on and connected to the first and second source/drain region respectively, and a contact separation layer separating the first and second source/drain contacts, the contact separation layer including a first portion and a second portion on first portion both between the first and second source/drain regions, wherein a width of the first portion of the contact separation layer in the first direction is greater than a width of the second portion of the contact separation layer in the first direction.

Abstract: The present invention relates to a polyester resin and a preparation method therefor. Specifically, provided, in an embodiment of the present invention, is a polyester resin including: a copolymer including a diacid moiety and a diol moiety; a phosphorus-based heat stabilizer; and a complementary colorant, wherein the diacid moiety includes a furandicarboxylic acid-based compound-derived moiety, the diol moiety includes an alkylene glycol-based compound-derived moiety, the phosphorus-based heat stabilizer includes an ester group at the terminal end thereof, and the complementary colorant includes a blue dye and a red dye.

Abstract: A memory controller may include: a request checker identifying memory devices corresponding to requests received from a host among the plurality of memory devices and generating the identified device information on memory devices to perform operations corresponding to the requests; a dummy manager outputting a request for controlling a dummy pulse to be applied to channels of selected memory devices according to the device information among the plurality of channels; and a dummy pulse generator sequentially applying the dummy pulse to the channels coupled to the selected memory devices, based on the request for controlling the dummy pulse. A memory controller may include an idle time monitor outputting an idle time interval of the memory device and a clock signal generator generating a clock signal based on the idle time interval and outputting the clock signal to the memory device through the channel to perform a current operation.

Abstract: The present invention relates to a polyester resin and a manufacturing method thereof. Specifically, an embodiment of the present invention provides a polyester resin consisting of a copolymer of a monomer mixture including a furan dicarboxylic acid-based compound, an aliphatic diol-based compound, and a lactone-based compound.

Abstract: A storage device comprises a nonvolatile memory including a plurality of memory blocks, and a controller configured to control an operation of the nonvolatile memory, generate a mapping table that maps physical addresses and logical addresses for the plurality of memory blocks in a test mode, and set a fake block bitmap indicating whether each of the plurality of memory blocks included in the mapping table is a fake block to which data is not written.

Abstract: Power management device for driving a display panel is disclosed. In order to achieve the above object, a power management device of operating a display panel may include a first buffer circuit configured to generate and output a first gamma reference voltage in a first section of a frame and generate and output a first touch driving voltage in a second section of the frame; and a second buffer circuit configured to generate and output a second gamma reference voltage in the first section and generate and output a second touch driving voltage in the second section.

Abstract: In a surface emitting laser package, a surface emitting laser element and a substrate may be electrically connected through a diffusion part. In detail, according to the surface emitting laser package, a housing includes a step, the diffusion part is disposed at the step of the housing, and the surface emitting laser element and the substrate may be electrically connected through a connection wiring extending through the housing to correspond to the step and a conductive line disposed at one side of the diffusion part.

Abstract: A method for counting coughs is provided. The method includes determining a plurality of time points in the sound signal, extracting a plurality of cropped signals from the sound signal by cropping portions of the sound signal, wherein each of the cropped portions corresponds to a signal with a predetermined time length from each of the determined time points in the sound signal, transforming each of the plurality of cropped signals into a spectrogram image, thereby forming a plurality of spectrogram images, determining whether each of the plurality of spectrogram images represents a cough by inputting each of the plurality of spectrogram images into a cough determination model, wherein the cough determination model is a classification model trained to classify the inputted spectrogram image into a cough or non-cough, determining a plurality of tags according to results determined by the cough determination model.

Abstract: A apparatus for wireless connection reconfiguration in a wireless communication system and a method thereof are proposed. The disclosed generally relates to the wireless communication system and, more particularly, to the apparatus for the wireless connection reconfiguration in the wireless communication system and the method thereof. The method for a base station (BS) in the wireless communication system includes a process of transmitting a connection reconfiguration request (RRCReconfiguration) message to a user equipment (UE), a process of reconfiguring the UE on the basis of the connection reconfiguration request message, and a process of completing the reconfiguration of the UE on the basis of a connection reconfiguration complete (RRCReconfigurationComplete) message received from the UE.

Abstract: The present invention relates to a magnetic nanoparticle heating apparatus using resonance, and more particularly, to a magnetic nanoparticle heating apparatus using resonance, the method being capable of efficiently generating heat within a short time by controlling a factor of a direct current (DC)/alternating current (AC) magnetic field applied to magnetic nanoparticles.

Abstract: The present invention relates to a nail sticker and the nail sticker is a curable nail sticker. The nail sticker includes a soft layer, the soft layer includes a resin for the soft layer, and the resin for the soft layer may include at least one of cellulose acetate butyrate and cellulose acetate propionate.

Abstract: An antibody derived from a cancer survivor and use thereof. More particularly, among antibodies derived from survivors of 5 or more years from breast cancer surgery, an antibody showing high binding strength to cancer cells and having an inhibitory effect on the growth and migration of cancer cells is selected to identify an antigen of the antibody. The antibody is then highly likely to contribute to the survival of cancer patients and unlikely to cause adverse effects upon administration, and thus, can be widely used clinically for preventing and treating cancer and inhibiting metastasis.

Abstract: A semiconductor memory device with an improved electric characteristic and reliability is provided. The semiconductor memory device including a substrate including an active region defined by device separation film, the active region including a first part and second parts, the second parts being on two opposite sides of the first part, respectively a bit line extending on the substrate and across the active region, and a bit line contact between the substrate and the bit line and connected to the first part of the active region may be provided. The bit line contact includes a first ruthenium pattern, and a width of upper surface of the first ruthenium pattern is smaller than a width of bottom surface of the first ruthenium pattern.

Abstract: A semiconductor memory device includes a substrate having a cell array area and a core area near the cell array area, the cell array area including a direct contact hole exposing an active region, a buried contact in the cell array area, the buried contact being connected to a storage element, a direct contact in the cell array area, the direct contact including an upper layer and a lower layer, the upper layer including a metal, and the lower layer being in the direct contact hole in direct contact with the active region and including a silicide of the metal, bit lines in contact with the upper layer of the direct contact, and word lines crossing the bit lines.