Abstract: The present disclosure describes a storage device including a top panel, a bottom panel, a back panel, a front panel, and two side panels configured to form an enclosed volume. The storage device further includes multiple slots disposed at inner surfaces of the two side panels and configured to hold a substrate, a gas diffuser disposed at an inner surface of the back panel and configured to provide a purge gas to the enclosed volume, an isolation gas device disposed on an inner surface of the top panel and adjacent to a top portion of the front panel, and an isolation gas line configured to connect the isolation gas device to the gas diffuser. The isolation gas device is configured to inject the purge gas into a front portion of the storage device and in a direction from the top panel toward the bottom panel.

Abstract: A method for manufacturing a semiconductor structure includes disposing a wafer in a processing chamber, in which the wafer is laterally surrounded by a focus ring. A plasma is formed in the processing chamber to process the wafer. A thickness of the focus ring is detected. A plasma direction of the plasma over a peripheral region of the wafer is adjusted according to the thickness of the focus ring.

Abstract: Chip packages and methods for forming the same are provided. The method includes providing a substrate having upper and lower surfaces, and having a chip region and a scribe-line region surrounding the chip region. The substrate has a dielectric layer on its upper surface. A masking layer is formed over the substrate to cover the dielectric layer. The masking layer has a first opening exposing the dielectric layer and extending in the extending direction of the scribe-line region to surround the chip region. An etching process is performed on the dielectric layer directly below the first opening, to form a second opening that is in the dielectric layer directly below the first opening. The masking layer is removed to expose the dielectric layer having the second opening. A dicing process is performed on the substrate through the second opening.

Abstract: The present disclosure describes a storage device including a top panel, a bottom panel, a back panel, a front panel, and two side panels configured to form an enclosed volume. The storage device further includes multiple slots disposed at inner surfaces of the two side panels and configured to hold a substrate, a gas diffuser disposed at an inner surface of the back panel and configured to provide a purge gas to the enclosed volume, an isolation gas device disposed on an inner surface of the top panel and adjacent to a top portion of the front panel, and an isolation gas line configured to connect the isolation gas device to the gas diffuser. The isolation gas device is configured to inject the purge gas into a front portion of the storage device and in a direction from the top panel toward the bottom panel.

Abstract: A power setting method and an electronic device are provided. The power setting method includes: determining in a situation that, according to an enable signal corresponding to a network sharing function of the electronic device, the network sharing function is enabled; and in response to the network sharing function being enabled, setting an output power of the electronic device according to a first setting mode.

Abstract: Methods of fingerprinting a specific molecule in a composition using nuclear magnetic resonance (NMR) is disclosed. The disclosed NMR methods provide several modifications and improvements over existing NMR techniques. In some embodiments, the methods include applying a cycle of signal processing steps, including applying a radio frequency (RF) pulse, applying a gradient pulse having a pulse length less than or equal to 1000 ?s, and applying a water suppression technique (WET). In some embodiments, the methods further include repeating the cycle for at least 3 times to acquire an enhanced signal of the composition. In some embodiments, the methods further include fingerprinting the specific molecule based on the enhanced signal of the composition.

Abstract: A closed gas circulation system may include a sealed plenum, circulation fans, and a fan filter unit (FFU) inlet to contain, filter, condition, and re-circulate a gas through a chamber of an interface tool. The gas provided to the chamber is maintained in a conditioned environment in the closed gas circulation system as opposed to introducing external air into the chamber through the FFU inlet. This enables precise control over the relative humidity and oxygen concentration of the gas used in the chamber, which reduces the oxidation of semiconductor wafers that are transferred through the chamber. The closed gas circulation system may also include an air-flow rectifier, a return vent, and one or more vacuum pumps to form a downflow of collimated gas in the chamber and to automatically control the feed-forward pressure and flow of gas through the chamber and the sealed plenum.

Abstract: An antenna array includes a first antenna unit, a second antenna unit, a third antenna unit, a fourth antenna unit, a first auxiliary metal element, a second auxiliary metal element, a third auxiliary metal element, and a fourth auxiliary metal element. The first auxiliary metal element is adjacent to the first antenna unit. The second auxiliary metal element is adjacent to the second antenna unit. The third auxiliary metal element is adjacent to the third antenna unit. The fourth auxiliary metal element is adjacent to the fourth antenna unit. The first auxiliary metal element, the second auxiliary metal element, the third auxiliary metal element, and the fourth auxiliary metal element are configured to increase the radiation gain of the antenna array.

Abstract: A closed gas circulation system may include a sealed plenum, circulation fans, and a fan filter unit (FFU) inlet to contain, filter, condition, and re-circulate a gas through a chamber of an interface tool. The gas provided to the chamber is maintained in a conditioned environment in the closed gas circulation system as opposed to introducing external air into the chamber through the FFU inlet. This enables precise control over the relative humidity and oxygen concentration of the gas used in the chamber, which reduces the oxidation of semiconductor wafers that are transferred through the chamber. The closed gas circulation system may also include an air-flow rectifier, a return vent, and one or more vacuum pumps to form a downflow of collimated gas in the chamber and to automatically control the feed-forward pressure and flow of gas through the chamber and the sealed plenum.

Abstract: A power setting method and an electronic device are provided. The power setting method includes: determining in a situation that, according to an enable signal corresponding to a network sharing function of the electronic device, the network sharing function is enabled; and in response to the network sharing function being enabled, setting an output power of the electronic device according to a first setting mode.

Abstract: The present disclosure describes a storage device including a top panel, a bottom panel, a back panel, a front panel, and two side panels configured to form an enclosed volume. The storage device further includes multiple slots disposed at inner surfaces of the two side panels and configured to hold a substrate, a gas diffuser disposed at an inner surface of the back panel and configured to provide a purge gas to the enclosed volume, an isolation gas device disposed on an inner surface of the top panel and adjacent to a top portion of the front panel, and an isolation gas line configured to connect the isolation gas device to the gas diffuser. The isolation gas device is configured to inject the purge gas into a front portion of the storage device and in a direction from the top panel toward the bottom panel.

Abstract: A mobile device includes a ground element, a first radiation element, a second radiation element, and a dielectric substrate. The first radiation element has a feeding point. The first radiation element includes a meandering portion. The second radiation element is coupled to the feeding point, and is at least partially surrounded by the first radiation element. A coupling gap is formed between the first radiation element and the second radiation element. The ground element, the first radiation element, and the second radiation element are all disposed on the dielectric substrate. A planar antenna structure is formed by the first radiation element and the second radiation element. The planar antenna structure covers a TETRA (Terrestrial Trunked Radio) frequency band and a GPS (Global Positioning System) frequency band.

Abstract: A mobile device includes a ground element, a first radiation element, a second radiation element, and a dielectric substrate. The first radiation element has a feeding point. The first radiation element includes a meandering portion. The second radiation element is coupled to the feeding point, and is at least partially surrounded by the first radiation element. A coupling gap is formed between the first radiation element and the second radiation element. The ground element, the first radiation element, and the second radiation element are all disposed on the dielectric substrate. A planar antenna structure is formed by the first radiation element and the second radiation element. The planar antenna structure covers a TETRA (Terrestrial Trunked Radio) frequency band and a GPS (Global Positioning System) frequency band.

Abstract: A semiconductor device includes a fin projecting upwardly from a substrate; a gate stack engaging the fin; a gate spacer on a sidewall of the gate stack and in contact with the gate stack; and a dielectric layer on the sidewall of the gate stack and in contact with the gate stack, the dielectric layer being vertically between the fin and the gate spacer, wherein the dielectric layer has a thickness small than the gate spacer.

Abstract: The present disclosure describes a storage device including a top panel, a bottom panel, a back panel, a front panel, and two side panels configured to form an enclosed volume. The storage device further includes multiple slots disposed at inner surfaces of the two side panels and configured to hold a substrate, a gas diffuser disposed at an inner surface of the back panel and configured to provide a purge gas to the enclosed volume, an isolation gas device disposed on an inner surface of the top panel and adjacent to a top portion of the front panel, and an isolation gas line configured to connect the isolation gas device to the gas diffuser. The isolation gas device is configured to inject the purge gas into a front portion of the storage device and in a direction from the top panel toward the bottom panel.

Abstract: An apparatus for chemical mechanical polishing of a wafer includes a process chamber and a rotatable platen disposed inside the process chamber. A polishing pad is disposed on the platen and a wafer carrier is disposed on the platen. A slurry supply port is configured to supply slurry on the platen. A process controller is configured to control operation of the apparatus. A set of microphones is disposed inside the process chamber. The set of microphones is arranged to detect sound in the process chamber during operation of the apparatus and transmit an electrical signal corresponding to the detected sound. A signal processor is configured to receive the electrical signal from the set of microphones, process the electrical signal to enable detection of an event during operation of the apparatus, and in response to detecting the event, transmit a feedback signal to the process controller.

Abstract: An antenna array includes a first antenna unit, a second antenna unit, a third antenna unit, a fourth antenna unit, a first auxiliary metal element, a second auxiliary metal element, a third auxiliary metal element, and a fourth auxiliary metal element. The first auxiliary metal element is adjacent to the first antenna unit. The second auxiliary metal element is adjacent to the second antenna unit. The third auxiliary metal element is adjacent to the third antenna unit. The fourth auxiliary metal element is adjacent to the fourth antenna unit. The first auxiliary metal element, the second auxiliary metal element, the third auxiliary metal element, and the fourth auxiliary metal element are configured to increase the radiation gain of the antenna array.