Abstract: The disclosure relates to a nitrogen-doped graphitic nanoplate, and in particular to a nitrogen-doped graphitic nanoplate including, based on 100 parts by weigh of the nitrogen-doped graphitic nanoplate, 72 to 80 parts by weight of carbon; 12 to 15 parts by weight of nitrogen; and 0 to 3 parts by weight of by-product. The nitrogen-doped graphitic nanoplate barely includes by-product to enable to restrain changes in material property and may be applied to catalyst supports, energy, fuel cells, etc.

Abstract: Disclosed is an edge-functionalized graphitic material manufactured by using a mechanochemical process. The edge-functionalized graphitic material is manufactured by pulverizing graphite in the presence of a variety of atmospheric agents in the form of gas phase, liquid phase, or solid phase. The edge-functionalized graphitic material, which is a precursor applicable into various fields, is expected to replace the prior art oxidized graphite.

Abstract: Disclosed are boron/nitrogen co-doped graphene for semiconductor applications and a method for producing the same. The boron/nitrogen co-doping allows the use of the doped graphene in a wider variety of applications, including semiconductors. In contrast, graphene structures produced by conventional methods have good physical, chemical, and electrical stability but cannot be used in semiconductor applications due to the absence of band gaps therein. In addition, the boron/nitrogen co-doping makes the doped graphene highly dispersible in organic solvents.

Abstract: Disclosed is a method for producing edge-functionalized graphite with phosphoric acid. According to the method, graphite is pulverized into smaller pieces and is then exposed to an atmosphere containing oxygen and water. The method enables the production of graphite functionalized with phosphoric acid groups, which could not be achieved by conventional mechanochemical methods. In addition, the method is carried out in a very simple and economical manner and is suitable for large-scale production.

Abstract: Disclosed is a method for producing edge-functionalized graphite or graphene with fluoro groups. According to the method, graphite is pulverized into smaller pieces and is then allowed to react with a surrounding material containing fluorine or a fluorocarbon compound. The method enables the production of graphite or graphene functionalized with fluoro groups, which could not be achieved by conventional mechanochemical methods. In addition, the method is carried out in a very simple and economical manner and is suitable for large-scale production.

Abstract: Provided is an apparatus and method for exfoliation of graphene, comprising a chamber which has a through-hole formed at one surface thereof; a cylinder which receives graphite and a volatile material to be vaporized at room temperature and has an opening to be corresponding to the through-hole of the chamber, and which is disposed at an outside of the chamber; a clamp which is disposed in the chamber to pass through the through-hole of the chamber and thus selectively seal the opening of the cylinder; and an operation mechanism which is connected with the clamp and moves the clamp so that the opening of the cylinder is selectively sealed by the clamp. Therefore, it is not necessary to use an acid like sulfuric acid, and it is also not necessary to perform a thermal treatment process for removing sulfuric acid.

Abstract: Disclosed is a method for producing edge-functionalized graphite with phosphoric acid. According to the method, graphite is pulverized into smaller pieces and is then exposed to an atmosphere containing oxygen and water. The method enables the production of graphite functionalized with phosphoric acid groups, which could not be achieved by conventional mechanochemical methods. In addition, the method is carried out in a very simple and economical manner and is suitable for large-scale production.

Abstract: Disclosed are boron/nitrogen co-doped graphene for semiconductor applications and a method for producing the same. The boron/nitrogen co-doping allows the use of the doped graphene in a wider variety of applications, including semiconductors. In contrast, graphene structures produced by conventional methods have good physical, chemical, and electrical stability but cannot be used in semiconductor applications due to the absence of band gaps therein. In addition, the boron/nitrogen co-doping makes the doped graphene highly dispersible in organic solvents.

Abstract: Disclosed is & melted for producing edge-functionalized graphite or graphene with fluoro groups. According to the method, graphite is pulverized into smaller pieces and is then, allowed to react with a surrounding material containing fluorine or a fluorocarbon compound. The method enables the production of graphite or grapheme functionalized with fluoro groups, which could not be achieved by conventional mechanochemical methods. In addition, the method is carried out in a very simple and economical manner and is suitable for large-scale production.

Abstract: Disclosed is a method for producing graphene functionalized at its edge positions of graphite. Organic material having one or more functional groups is reacted with graphite in reaction medium comprising methanesulfonic acid and phosphorus pentoxide, or in reaction medium comprising trifluoromethanesulfonic acid, to produce graphene having organic material fuctionalized at edges. And then, high purity and large scaled graphene and film can be obtained by dispersing, centrifugal separating the functionalized graphene in a solvent and reducing, in particular heat treating the graphene. According to the present invention graphene can be produced inexpensively in a large amount with a minimum loss of graphite. (FIG.

Abstract: The present invention relates to a method of preparing a nitrogen-doped graphene comprising preparing a Edge-Functionalized Graphene by binding a graphite with a organic material having amino groups and functional groups such as carboxy acid group through an electrophilic substitution reaction, and heat treating the resultant Edge-Functionalized Graphene, and a nitrogen-doped graphene prepared thereby. According to the present invention, by a more inexpensive and simpler method, a nitrogen-doped graphene can be prepared at higher purity and higher yield. The nitrogen-doped graphene obtained by the present invention has very excellent physical and electric properties, and particularly has a superior oxygen reduction capability, compared with the platinum catalyst used at cathode of a H2/O2 fuel cell so that it will replace the platinum to lower more the cost of a H2/O2 fuel cell or to increase its life and further to provide a new turning point for the commercialization of a H2/O2 fuel cell.

Abstract: Provided is an apparatus and method for exfoliation of graphene, comprising a chamber which has a through-hole formed at one surface thereof; a cylinder which receives graphite and a volatile material to be vaporized at room temperature and has an opening to be corresponding to the through-hole of the chamber, and which is disposed at an outside of the chamber; a clamp which is disposed in the chamber to pass through the through-hole of the chamber and thus selectively seal the opening of the cylinder; and an operation mechanism which is connected with the clamp and moves the clamp so that the opening of the cylinder is selectively sealed by the clamp. Therefore, it is not necessary to use an acid like sulfuric acid, and it is also not necessary to perform a thermal treatment process for removing sulfuric acid.

Abstract: Disclosed is a method for producing graphene functionalized at its edge positions of graphite. Organic material having one or more functional groups is reacted with graphite in reaction medium comprising methanesulfonic acid and phosphorus pentoxide, or in reaction medium comprising trifluoromethanesulfonic acid, to produce graphene having organic material fuctionalized at edges. And then, high purity and large scaled graphene and film can be obtained by dispersing, centrifugal separating the functionalized graphene in a solvent and reducing, in particular heat treating the graphene. According to the present invention graphene can be produced inexpensively in a large amount with a minimum loss of graphite.

Abstract: Disclosed is an edge-functionalized graphitic material manufactured by using a mechanochemical process. The edge-functionalized graphitic material is manufactured by pulverizing graphite in the presence of a variety of atmospheric agents in the form of gas phase, liquid phase, or solid phase. The edge-functionalized graphitic material, which is a precursor applicable into various fields, is expected to replace the prior art oxidized graphite.

Abstract: The present invention relates to a method of preparing a nitrogen-doped graphene comprising preparing a Edge-Functionalized Graphene by binding a graphite with a organic material having amino groups and functional groups such as carboxy acid group through an electrophilic substitution reaction, and heat treating the resultant Edge-Functionalized Graphene, and a nitrogen-doped graphene prepared thereby. According to the present invention, by a more inexpensive and simpler method, a nitrogen-doped graphene can be prepared at higher purity and higher yield. The nitrogen-doped graphene obtained by the present invention has very excellent physical and electric properties, and particularly has a superior oxygen reduction capability, compared with the platinum catalyst used at cathode of a H2/O2 fuel cell so that it will replace the platinum to lower more the cost of a H2/O2 fuel cell or to increase its life and further to provide a new turning point for the commercialization of a H2/O2 fuel cell.