Patents by Inventor Inao Fujisaki

Inao Fujisaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for growing single crystal of compound semiconductor and substrate cut out therefrom
    Patent number: 6878202
    Abstract: A method for growing a compound semiconductor single crystal comprising cooling a starting material melt of a compound semiconductor with an upward increasing temperature gradient in a crystal-growing container having a seed crystal placed at a lower end, thereby growing a single crystal upward from the seed crystal, the crystal orientation of the seed crystal in a crystal growth axis direction being an offset orientation of <100>+?, wherein the offset angle ? is 2°???55°.
    Type: Grant
    Filed: April 2, 2002
    Date of Patent: April 12, 2005
    Assignee: Hitachi Cable, Ltd.
    Inventors: Masaya Ohnishi, Kenya Itani, Seiji Mizuniwa, Hiroshi Sasabe, Inao Fujisaki
  • Method for growing single crystal of compound semiconductor and substrate cut out therefrom
    Publication number: 20020139296
    Abstract: A method for growing a compound semiconductor single crystal comprising cooling a starting material melt of a compound semiconductor with an upward increasing temperature gradient in a crystal-growing container having a seed crystal placed at a lower end, thereby growing a single crystal upward from the seed crystal, the crystal orientation of the seed crystal in a crystal growth axis direction being an offset orientation of <100>+&thgr;, wherein the offset angle &thgr; is 2°≦&thgr;≦55°.
    Type: Application
    Filed: April 2, 2002
    Publication date: October 3, 2002
    Applicant: HITACHI CABLE LIMITED
    Inventors: Masaya Ohnishi, Kenya Itani, Seiji Mizuniwa, Hiroshi Sasabe, Inao Fujisaki