Patents by Inventor Inbeom YIM

Inbeom YIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250244660
    Abstract: A semiconductor device manufacturing method includes determining whether or not a reticle writing correction needs to be applied to a mask for an exposure process, when determining that the reticle writing correction needs to be applied, manufacturing the mask to which the reticle writing correction is applied by using the mask to which the reticle writing correction is applied, measuring an overlay and performing a correction based on the basis of on the measured overlay, determining whether or not a value of the measured overlay is greater than a specification, and when the value of the measured overlay is not greater than the specification, performing a subsequent process.
    Type: Application
    Filed: September 4, 2024
    Publication date: July 31, 2025
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Inbeom YIM, Seungyoon LEE, Jeongjin LEE, Chan HWANG, Heonju LEE
  • Publication number: 20240222201
    Abstract: The method including forming a first photoresist (PR) pattern by exposing first field areas of a first PR layer, forming a second PR pattern by exposing first top field areas and first bottom field areas of a second PR layer, measuring a first top intra-field overlay for the first top field areas and a first bottom intra-field overlay for the first bottom field areas, and determining a top intra-field correction parameter and a bottom intra-field correction parameter based on the first top intra-field overlay and the first bottom intra-field overlay, respectively, may be provided.
    Type: Application
    Filed: August 23, 2023
    Publication date: July 4, 2024
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Inbeom YIM, Jeongjin LEE, Seungyoon LEE, Chan HWANG
  • Patent number: 11977338
    Abstract: A method of manufacturing a semiconductor device includes selecting a diffraction based focus (DBF) mark that is unaffected by a pattern of a lower layer; manufacturing a mask including a mark pattern for forming the DBF mark; forming the DBF mark in a cell region of a wafer by using the mask; measuring the DBF mark and monitoring defocus; correcting the defocus on the basis of a result of the monitoring; and forming a pattern in the cell region of the wafer, after correcting the defocus.
    Type: Grant
    Filed: June 7, 2021
    Date of Patent: May 7, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jieun Park, Youngmin Seo, Inbeom Yim
  • Publication number: 20240134290
    Abstract: Provided are a method of selecting multi-wavelengths for overlay measurement, for accurately measuring overlay, and an overlay measurement method and a semiconductor device manufacturing method using the multi-wavelengths. The method of selecting multi-wavelengths for overlay measurement includes measuring an overlay at multiple positions on a wafer at each of a plurality of wavelengths within a set first wavelength range, selecting representative wavelengths that simulate the overlay of the plurality of wavelengths, from among the plurality of wavelengths, and allocating weights to the representative wavelengths, respectively.
    Type: Application
    Filed: June 9, 2023
    Publication date: April 25, 2024
    Inventors: Inbeom Yim, Junseong Yoon, Seungyoon Lee, Jeongjin Lee, Chan Hwang
  • Publication number: 20240118627
    Abstract: A method of correcting overlay includes forming first patterns in a plurality of first shot areas by radiating extreme ultraviolet light reflected from a first mask to a first layer; forming second patterns in each of a plurality of second shot areas by radiating extreme ultraviolet light reflected from a second mask to a second layer; matching a pair of second shot areas to each of the first shot areas; and generating first and second correction parameters for correcting an overlay error of the second patterns, wherein the first correction parameter is configured to correct an overlay error of each of the second shot areas based on the first shot area matched to each of the second shot areas, and the second correction parameter is configured to correct an overlay error between the pair of second shot areas matched to each of the first shot areas.
    Type: Application
    Filed: May 30, 2023
    Publication date: April 11, 2024
    Inventors: Jeongjin Lee, Inbeom Yim
  • Publication number: 20220128911
    Abstract: A method of manufacturing a semiconductor device includes selecting a diffraction based focus (DBF) mark that is unaffected by a pattern of a lower layer; manufacturing a mask including a mark pattern for forming the DBF mark; forming the DBF mark in a cell region of a wafer by using the mask; measuring the DBF mark and monitoring defocus; correcting the defocus on the basis of a result of the monitoring; and forming a pattern in the cell region of the wafer, after correcting the defocus.
    Type: Application
    Filed: June 7, 2021
    Publication date: April 28, 2022
    Inventors: Jieun PARK, Youngmin SEO, Inbeom YIM