Patents by Inventor In Bum YANG

In Bum YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240379904
    Abstract: A light emitting device is provided that includes: a substrate including a first protrusion pattern on its top surface; a base layer formed on a top of the substrate; a first electrode layer formed on a top of the base layer; a light emitting layer formed on a top of the first electrode layer; and a second electrode layer formed on a top of the light emitting layer. The base layer includes a second protrusion pattern different from the first protrusion pattern on a top surface thereof.
    Type: Application
    Filed: May 6, 2024
    Publication date: November 14, 2024
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventor: In Bum YANG
  • Patent number: 10147760
    Abstract: A light-emitting device may include separate, first and second light-emitting structures that are isolated from direct contact with each other on a phototransmissive substrate. Each light-emitting structure may include a first conductivity-type semiconductor layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer. The first and second light-emitting structures may be electrically connected to each other. An inter-structure conductive layer may electrically interconnect the first conductivity-type semiconductor layer of the first light-emitting structure to the second conductivity-type semiconductor layer of the second light-emitting structure. The second light-emitting structure may include a finger structure extending from an outer edge of the second light-emitting structure toward an interior of the second light-emitting structure.
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: December 4, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-kyu Sung, Jae-ryung Yoo, Seung-wan Chae, Jae-young Lee, In-bum Yang, Min-gu Ko, Sung-wook Lee
  • Publication number: 20180166498
    Abstract: A light-emitting device may include separate, first and second light-emitting structures that are isolated from direct contact with each other on a phototransmissive substrate. Each light-emitting structure may include a first conductivity-type semiconductor layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer. The first and second light-emitting structures may be electrically connected to each other. An inter-structure conductive layer may electrically interconnect the first conductivity-type semiconductor layer of the first light-emitting structure to the second conductivity-type semiconductor layer of the second light-emitting structure. The second light-emitting structure may include a finger structure extending from an outer edge of the second light-emitting structure toward an interior of the second light-emitting structure.
    Type: Application
    Filed: May 30, 2017
    Publication date: June 14, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Young-kyu SUNG, Jae-ryung YOO, Seung-wan CHAE, Jae-young LEE, In-bum YANG, Min-gu KO, Sung-wook LEE
  • Publication number: 20170040494
    Abstract: A semiconductor light emitting device includes a semiconductor laminate including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, the first conductive semiconductor layer and the active layer defining a first trench exposing a first portion of the first conductive semiconductor layer, and a second trench exposing a second portion of the first conductive semiconductor layer, a first finger electrode disposed in the exposed portion of the first conductive semiconductor layer in the first trench, an insulating layer disposed on an internal surface of the second trench, and a second finger electrode disposed on the insulating layer in the second trench and electrically connected to the second conductive semiconductor layer.
    Type: Application
    Filed: August 4, 2016
    Publication date: February 9, 2017
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong Tae GIM, Il Ho AHN, In Bum YANG, Dong Yeoul LEE
  • Publication number: 20140011310
    Abstract: A method of manufacturing a semiconductor light emitting device is provided. The method includes irradiating a laser into a substrate having a first surface and a second surface opposing each other to form at least one laser irradiation area on the substrate. A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer is formed on the substrate. The light emitting structure and the substrate is cut in a position corresponding to the laser irradiation area of the substrate, in a top surface of the light emitting structure, to separate the light emitting structure and the substrate into individual device units.
    Type: Application
    Filed: June 19, 2013
    Publication date: January 9, 2014
    Inventors: Seok Min HWANG, Jae Yoon KIM, Je Won KIM, In Bum YANG, In Yong HWANG