Abstract: Provided are a substrate treating unit, and substrate treating apparatus and method using the same. Two nozzle arms are provided, and photoresist liquid nozzles and an organic solvent nozzle are installed in each of the nozzle arms. A temperature of a photoresist liquid flowing into the photoresist liquid nozzles and a temperature of an organic solvent flowing into the organic solvent nozzle are maintained by a temperature control fluid supplied through the same passage. Also, a waiting port in which a nozzle arm used in a process temporarily waits is provided. The organic solvent is provided to a photoresist liquid nozzle that is not used in a process and is not provided to a photoresist liquid nozzle used in the process.

Abstract: In an apparatus for performing a substrate developing process, a first washing tank and a second washing tank are disposed on both sides of a substrate support section for supporting the substrate opposite to each other to wash a developing nozzle. The developing nozzle moves in a horizontal direction from the first washing tank toward the second washing tank and supplies a developing solution onto the substrate in the meantime. After supplying the developing solution, the developing nozzle is received in the second washing tank, and the developing solution adhered to the developing nozzle is removed by a washing solution in the second washing tank.

Abstract: A phase change memory device includes a plurality of phase change structures, each with a phase change material layer, disposed on a semiconductor substrate, a first protective layer formed to cover surfaces of the plurality of phase change structures, an atom adsorption enhancement layer formed on a surface of the first protective layer, and a second protective layer formed on a surface of the atom adsorption enhancement layer.

Abstract: Provided are a substrate treating unit, and substrate treating apparatus and method using the same. Two nozzle arms are provided, and photoresist liquid nozzles and an organic solvent nozzle are installed in each of the nozzle arms. A temperature of a photoresist liquid flowing into the photoresist liquid nozzles and a temperature of an organic solvent flowing into the organic solvent nozzle are maintained by a temperature control fluid supplied through the same passage. Also, a waiting port in which a nozzle arm used in a process temporarily waits is provided. The organic solvent is provided to a photoresist liquid nozzle that is not used in a process and is not provided to a photoresist liquid nozzle used in the process.

Abstract: In an apparatus for performing a substrate developing process, a first washing tank and a second washing tank are disposed on both sides of a substrate support section for supporting the substrate opposite to each other to wash a developing nozzle. The developing nozzle moves in a horizontal direction from the first washing tank toward the second washing tank and supplies a developing solution onto the substrate in the meantime. After supplying the developing solution, the developing nozzle is received in the second washing tank, and the developing solution adhered to the developing nozzle is removed by a washing solution in the second washing tank.

Abstract: A method for forming a bit line of a semiconductor device, in which tungsten is deposited just after depositing a metallic barrier layer, a nitride layer is deposited after forming a bit line to prevent the bit line from oxidation due to the exposure of tungsten, and then a rapid thermal treatment is performed, whereby the contact resistance of the bit line is stabilized, and an additional process of depositing TiN due to the micro crack generated by the rapid thermal treatment is not needed, so the manufacturing process becomes simple and the productivity of manufacturing the semiconductor device is improved.

Abstract: A method for forming a bit line of a semiconductor device, in which tungsten is deposited just after depositing a metallic barrier layer, a nitride layer is deposited after forming a bit line to prevent the bit line from oxidation due to the exposure of tungsten, and then a rapid thermal treatment is performed, whereby the contact resistance of the bit line is stabilized, and an additional process of depositing TiN due to the micro crack generated by the rapid thermal treatment is not needed, so the manufacturing process becomes simple and the productivity of manufacturing the semiconductor device is improved.