Abstract: A method includes providing a semiconductor substrate and forming a dielectric layer over the semiconductor substrate. The method includes forming a metal layer over the dielectric layer. The method includes forming a patterned mask over the metal layer. The method includes performing a first etching process using a first etchant to form metal patterns separated by trenches in the metal layer. The method further includes performing a second etching process using a second etchant and a passivant to extend the trenches in the dielectric layer, resulting in a passivation layer formed along sidewalls of the metal patterns.

Abstract: A method of vertically growing a material, such as an oxide, on features using a fluorine-containing gas includes performing the following concurrent steps: depositing the material on a relief pattern, such as a mask layer, using a precursor gas and a reactant gas, such as an oxygen-containing gas, and etching side protrusions of the material vertically overlapping recesses using the fluorine-containing gas. The relief pattern includes the features separated by the recesses, which may expose an underlying layer. The method may be performed in situ in an etching chamber of a plasma etching system, such as using a controller operatively coupled to at least one gas source configured to supply the precursor gas, the reactant gas, and the fluorine-containing gas into the etching chamber.

Abstract: A method includes providing a semiconductor substrate and forming a dielectric layer over the semiconductor substrate. The method includes forming a metal layer over the dielectric layer. The method includes forming a patterned mask over the metal layer. The method includes performing a first etching process using a first etchant to form metal patterns separated by trenches in the metal layer. The method further includes performing a second etching process using a second etchant and a passivant to extend the trenches in the dielectric layer, resulting in a passivation layer formed along sidewalls of the metal patterns.

Abstract: A method for fabricating a semiconductor device includes forming a pattern of trenches by etching a first layer formed over an underlying layer of a substrate, each of the trenches having an aspect ratio (AR) in a range with a lower limit of a first AR and an upper limit of a second AR, the pattern including a low-AR trench having the first AR and a high-AR trench having the second AR, the AR of a trench being a ratio of its depth to its opening width, the etching including: executing a first recipe in a plasma chamber to anisotropically etch the first layer for a first duration by flowing etchants through the chamber, an etch rate of the first layer being higher on the low-AR trench relative to that on the high-AR trench; and after executing the first recipe, executing a second recipe in the plasma chamber to etch the first layer anisotropically and concurrently deposit oxygen-containing etch byproducts to passivate exposed portions of sides of the trenches, the etch rate of the first layer being lower on th