Patents by Inventor Ing-Ju Lee
Ing-Ju Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230275049Abstract: Semiconductor devices are provided. The semiconductor device includes a substrate, an interconnect structure, and a conductive pad structure. The interconnect structure is over the substrate and includes a top metal layer. The conductive pad structure is over the interconnect structure and includes a lower barrier film, an upper barrier film, and an aluminum-containing layer. The lower barrier film is on the top metal layer. The upper barrier film is on the lower barrier film and has an amorphous structure. The aluminum-containing layer is on the upper barrier film. The lower barrier film and the upper barrier film are made of a same material, and a nitrogen atomic percentage of the upper barrier film is higher than a nitrogen atomic percentage of the lower barrier film.Type: ApplicationFiled: May 10, 2023Publication date: August 31, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Po-Hsun HUANG, Po-Han WANG, Ing-Ju LEE, Chao-Lung CHEN, Cheng-Ming WU
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Patent number: 11688703Abstract: Methods of fabricating semiconductor devices are provided. The method includes forming an interconnect structure over a substrate. The method also includes forming a passivation layer over the interconnect structure. The method further includes forming an opening in the passivation layer to expose a portion of the interconnect structure. In addition, the method includes sequentially forming a lower barrier film, an upper barrier film, and an aluminum-containing layer in the opening. The lower barrier film and the upper barrier film are made of metal nitride, and the upper barrier film has a nitrogen atomic percentage that is higher than a nitrogen atomic percentage of the lower barrier film and has an amorphous structure.Type: GrantFiled: April 13, 2022Date of Patent: June 27, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Po-Hsun Huang, Po-Han Wang, Ing-Ju Lee, Chao-Lung Chen, Cheng-Ming Wu
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Patent number: 11598016Abstract: An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.Type: GrantFiled: October 21, 2021Date of Patent: March 7, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jun-Nan Nian, Shiu-Ko Jangjian, Ting-Chun Wang, Ing-Ju Lee
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Publication number: 20220238467Abstract: Methods of fabricating semiconductor devices are provided. The method includes forming an interconnect structure over a substrate. The method also includes forming a passivation layer over the interconnect structure. The method further includes forming an opening in the passivation layer to expose a portion of the interconnect structure. In addition, the method includes sequentially forming a lower barrier film, an upper barrier film, and an aluminum-containing layer in the opening. The lower barrier film and the upper barrier film are made of metal nitride, and the upper barrier film has a nitrogen atomic percentage that is higher than a nitrogen atomic percentage of the lower barrier film and has an amorphous structure.Type: ApplicationFiled: April 13, 2022Publication date: July 28, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Po-Hsun HUANG, Po-Han WANG, Ing-Ju LEE, Chao-Lung CHEN, Cheng-Ming WU
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Patent number: 11309265Abstract: Methods of fabricating semiconductor devices are provided. The method includes providing a substrate and forming an interconnect structure on the substrate. The interconnect structure includes a top metal layer. The method also includes forming a first barrier film on the top metal layer using a first deposition process with a first level of power, and forming a second barrier film on the first barrier film using a second deposition process with a second level of power that is lower than the first level of power. The method further includes forming an aluminum-containing layer on the second barrier film. In addition, the method includes patterning the first barrier film, the second barrier film and the aluminum-containing layer to form a conductive pad structure.Type: GrantFiled: July 5, 2019Date of Patent: April 19, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Po-Hsun Huang, Po-Han Wang, Ing-Ju Lee, Chao-Lung Chen, Cheng-Ming Wu
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Publication number: 20220042197Abstract: An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.Type: ApplicationFiled: October 21, 2021Publication date: February 10, 2022Inventors: Jun-Nan Nian, Shiu-Ko JANGJIAN, Ting-Chun WANG, Ing-Ju LEE, Yu-Ren PENG, Yao-Hsiang LIANG
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Patent number: 11230784Abstract: An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.Type: GrantFiled: November 7, 2019Date of Patent: January 25, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jun-Nan Nian, Shiu-Ko Jangjian, Ting-Chun Wang, Ing-Ju Lee
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Patent number: 11018176Abstract: A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.Type: GrantFiled: April 29, 2019Date of Patent: May 25, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Chieh Chang, Jian-Shin Tsai, Chih-Chang Huang, Ing-Ju Lee, Ching-Yao Sun, Jyun-Ru Wu, Ching-Che Huang, Szu-An Wu, Ying-Lang Wang
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Publication number: 20200173051Abstract: An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.Type: ApplicationFiled: November 7, 2019Publication date: June 4, 2020Inventors: Jun-Nan Nian, Shiu-Ko JANGJIAN, Ting-Chun WANG, Ing-Ju LEE, Yu-Ren PENG, Yao-Hsiang LIANG
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Publication number: 20200035628Abstract: Methods of fabricating semiconductor devices are provided. The method includes providing a substrate and forming an interconnect structure on the substrate. The interconnect structure includes a top metal layer. The method also includes forming a first barrier film on the top metal layer using a first deposition process with a first level of power, and forming a second barrier film on the first barrier film using a second deposition process with a second level of power that is lower than the first level of power. The method further includes forming an aluminum-containing layer on the second barrier film. In addition, the method includes patterning the first barrier film, the second barrier film and the aluminum-containing layer to form a conductive pad structure.Type: ApplicationFiled: July 5, 2019Publication date: January 30, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Po-Hsun HUANG, Po-Han WANG, Ing-Ju LEE, Chao-Lung CHEN, Cheng-Ming WU
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Publication number: 20190252427Abstract: A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.Type: ApplicationFiled: April 29, 2019Publication date: August 15, 2019Inventors: Shih-Chieh Chang, Jian-Shin Tsai, Chih-Chang Huang, Ing-Ju Lee, Ching-Yao Sun, Jyun-Ru Wu, Ching-Che Huang, Szu-An Wu, Ying-Lang Wang
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Patent number: 10276621Abstract: A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.Type: GrantFiled: April 10, 2017Date of Patent: April 30, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Chieh Chang, Jian-Shin Tsai, Chih-Chang Huang, Ing-Ju Lee, Ching-Yao Sun, Jyun-Ru Wu, Ching-Che Huang, Szu-An Wu, Ying-Lang Wang
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Publication number: 20170213861Abstract: A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.Type: ApplicationFiled: April 10, 2017Publication date: July 27, 2017Inventors: Shih-Chieh Chang, Jian-Shin Tsai, Chih-Chang Huang, Ing-Ju Lee, Ching-Yao Sun, Jyun-Ru Wu, Ching-Che Huang, Szu-An Wu, Ying-Lang Wang
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Patent number: 9620555Abstract: A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.Type: GrantFiled: December 28, 2015Date of Patent: April 11, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Chieh Chang, Jian-Shin Tsai, Chih-Chang Huang, Ing-Ju Lee, Ching-Yao Sun, Jyun-Ru Wu, Ching-Che Huang, Szu-An Wu, Ying-Lang Wang
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Publication number: 20160118434Abstract: A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.Type: ApplicationFiled: December 28, 2015Publication date: April 28, 2016Inventors: Shih-Chieh Chang, Jian-Shin Tsai, Chih-Chang Huang, Ing-Ju Lee, Ching-Yao Sun, Jyun-Ru Wu, Ching-Che Huang, Szu-An Wu, Ying-Lang Wang
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Patent number: 9224773Abstract: A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.Type: GrantFiled: March 14, 2012Date of Patent: December 29, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Chieh Chang, Jian-Shin Tsai, Chih-Chang Huang, Ing-Ju Lee, Ching-Yao Sun, Jyun-Ru Wu, Ching-Che Huang, Szu-An Wu, Ying-Lang Wang
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Patent number: 8759928Abstract: A system and method for reducing cross-talk in complementary metal oxide semiconductor back side illuminated image sensors is provided. An embodiment comprises forming a grid around the pixel regions on an opposite side of the substrate than metallization layers. The grid may be formed of a material such as tungsten with a (110)-rich crystalline orientation. This orientation helps prevents defects that can occur during patterning of the grid.Type: GrantFiled: April 4, 2012Date of Patent: June 24, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Chieh Chang, Jian-Shin Tsai, Chih-Chang Huang, Ing-Ju Lee, Chi-Cheng Hung, Jun-Nan Nian, Chih-Chung Chang
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Publication number: 20130264668Abstract: A system and method for reducing cross-talk in complementary metal oxide semiconductor back side illuminated image sensors is provided. An embodiment comprises forming a grid around the pixel regions on an opposite side of the substrate than metallization layers. The grid may be formed of a material such as tungsten with a (110)-rich crystalline orientation. This orientation helps prevents defects that can occur during patterning of the grid.Type: ApplicationFiled: April 4, 2012Publication date: October 10, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shih-Chieh Chang, Jian-Shin Tsai, Chih-Chang Huang, Ing-Ju Lee, Chi-Cheng Hung, Jun-Nan Nian, Chih-Chung Chang
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Publication number: 20130134541Abstract: A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.Type: ApplicationFiled: March 14, 2012Publication date: May 30, 2013Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Chieh Chang, Jian-Shin Tsai, Chih-Chang Huang, Ing-Ju Lee, Ching-Yao Sun, Jyun-Ru Wu, Ching-Che Huang, Szu-An Wu, Ying-Lang Wang