Patents by Inventor Ingeun YU

Ingeun YU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12785631
    Abstract: A power amplifier includes a first power transistor configured to amplify a first input radio-frequency (RF) signal and output a first output RF signal; a first transistor comprising a control terminal, a first terminal receiving a first voltage, and a second terminal supplying a first bias current to the first power transistor; a second power transistor configured to amplify a second input RF signal and output a second output RF signal; a second transistor comprising a control terminal, a first terminal receiving a second voltage, and a second terminal supplying a second bias current to the second power transistor; a signal detection circuit configured to detect a first value corresponding to a magnitude of either the first output RF signal or the second output RF signal; and a power supply voltage control circuit configured to adjust the first voltage and/or the second voltage in response to the first value.
    Type: Grant
    Filed: January 24, 2024
    Date of Patent: November 3, 2026
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Kyung Hee Hong, Jaehyouck Choi, Kyujin Choi, Yoshiyuki Tonami, Ingeun Yu
  • Publication number: 20250167743
    Abstract: A power amplifier includes a first power transistor configured to amplify a first input Radio Frequency (RF) signal, and output a first output RF signal; a first bias circuit configured to operate in a first communication mode, and comprising a first transistor configured to supply a first bias current to the first power transistor; and a second bias circuit configured to operate in a second communication mode, and comprising a second transistor configured to supply a second bias current to the first power transistor.
    Type: Application
    Filed: May 20, 2024
    Publication date: May 22, 2025
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Kyujin CHOI, Jaehyouck CHOI, Ingeun YU, Yoshiyuki TONAMI, Kyung Hee HONG
  • Publication number: 20240380367
    Abstract: A power amplifier includes a first power transistor configured to amplify a first input radio-frequency (RF) signal and output a first output RF signal; a first transistor comprising a control terminal, a first terminal receiving a first voltage, and a second terminal supplying a first bias current to the first power transistor; a second power transistor configured to amplify a second input RF signal and output a second output RF signal; a second transistor comprising a control terminal, a first terminal receiving a second voltage, and a second terminal supplying a second bias current to the second power transistor; a signal detection circuit configured to detect a first value corresponding to a magnitude of either the first output RF signal or the second output RF signal; and a power supply voltage control circuit configured to adjust the first voltage and/or the second voltage in response to the first value.
    Type: Application
    Filed: January 24, 2024
    Publication date: November 14, 2024
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Kyung Hee HONG, Jaehyouck CHOI, Kyujin CHOI, Yoshiyuki TONAMI, Ingeun YU