Patents by Inventor Ingming Chang

Ingming Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Converting SRAM cells to ROM cells
    Patent number: 7920411
    Abstract: A method of converting a static random access memory cell to a read only memory cell and the cell thus converted is disclosed. The cell to be converted comprises a data retention portion powered by a higher and lower voltage supply line and four transistors arranged as two cross coupled inverters. It is converted to a read only memory cell by severing a connection between at least one of said transistors within a first of said two inverters and one of said voltage supply lines such that when powered said first inverter outputs a predetermined value.
    Type: Grant
    Filed: February 25, 2009
    Date of Patent: April 5, 2011
    Assignee: ARM Limited
    Inventors: Ingming Chang, Karl Lin Wang
  • Converting SRAM cells to ROM Cells
    Publication number: 20100214824
    Abstract: A method of converting a static random access memory cell to a read only memory cell and the cell thus converted is disclosed. The cell to be converted comprises a data retention portion powered by a higher and lower voltage supply line and four transistors arranged as two cross coupled inverters. It is converted to a read only memory cell by severing a connection between at least one of said transistors within a first of said two inverters and one of said voltage supply lines such that when powered said first inverter outputs a predetermined value.
    Type: Application
    Filed: February 25, 2009
    Publication date: August 26, 2010
    Inventors: Ingming Chang, Karl Lin Wang
  • Degeneration technique for designing memory devices
    Patent number: 7523420
    Abstract: A system, method and computer program product are provided for producing an instance of a memory device from a banked memory architecture. The banked memory architecture specifies a maximum number of memory banks and a maximum number of rows per memory bank. The method comprises the step of receiving input parameters indicating a number of properties of the memory device, the properties comprising at least a number of rows R for the memory device. Thereafter, a degeneration process is performed on the banked memory architecture in order to produce the instance of a memory device having those properties.
    Type: Grant
    Filed: August 18, 2006
    Date of Patent: April 21, 2009
    Assignee: ARM Limited
    Inventors: Hemangi Umakant Gajjewar, Ingming Chang, Jungtae Kwon, Cezary Pietrzyk, Moon-Hae Son
  • Degeneration technique for designing memory devices
    Publication number: 20080046856
    Abstract: A system, method and computer program product are provided for producing an instance of a memory device from a banked memory architecture. The banked memory architecture specifies a maximum number of memory banks and a maximum number of rows per memory bank. The method comprises the step of receiving input parameters indicating a number of properties of the memory device, the properties comprising at least a number of rows R for the memory device. Thereafter, a degeneration process is performed on the banked memory architecture in order to produce the instance of a memory device having those properties.
    Type: Application
    Filed: August 18, 2006
    Publication date: February 21, 2008
    Applicant: ARM Limited
    Inventors: Hemangi Umakant Gajjewar, Ingming Chang, Jungtae Kwon, Cezary Pietrzyk, Moon-Hae Son