Abstract: An auxiliary layer is provided over a main surface of a sample, wherein the sample may be a semiconductor substrate. The auxiliary layer may have an essentially plane surface and is transparent or semi-transparent to an inspection radiation with a wave length between, for example, 193 and 800 nm. The sample coated with the auxiliary layer is inspected for defects in the sample via an imaging method that may use coherent radiation. After inspection, the auxiliary layer is removed. Dependent on the defect count, a process of manufacturing integrated circuits may be continued or the sample may be reworked or discarded.

Abstract: For the analysis of scratches on semiconductor wafers, the semiconductor wafer surface is detected and a possible scratch position or a scratch course on the semiconductor surface is determined, in which case a parameter value identifying the scratch is determined from the scratch position and the scratch course and this parameter value that has been determined is correlated with comparison parameter values, which identify installation-specific scratch positions and scratch courses, in order to determine an installation causing the scratch.

Abstract: For the analysis of scratches on semiconductor wafers, the semiconductor wafer surface is detected and a possible scratch position or a scratch course on the semiconductor surface is determined, in which case a parameter value identifying the scratch is determined from the scratch position and the scratch course and this parameter value that has been determined is correlated with comparison parameter values, which identify installation-specific scratch positions and scratch courses, in order to determine an installation causing the scratch.