Abstract: A circuit configuration for the limiting of current intensity and/or the edge slope of electrical signals includes: a voltage source; a switching element connected to the voltage source and equipped for switching the voltage source; and a limiting unit functionally positioned between the switching element and the voltage source, the limiting unit being equipped to limit a current intensity and/or an edge slope of an electrical signal in response to a switching process of the voltage source while using the switching element.

Abstract: The present invention refers to a method for selectively structuring of a polymer matrix comprising CNT (carbon nano tubes) on a flexible plastic substructure. The method also includes a suitable etching composition, which allows to proceed the method in a mass production.

Abstract: The present invention relates to compositions, which are useful for the generation of patterned or structured SiO2-layers or of SiO2-lines during the manufacturing process of semiconductor devices, and which are suitable for the application in inkjet operations. The present invention also relates to a modified process of manufacturing semiconductor devices taking advantage of these new compositions.

Abstract: The present invention relates to a process for the production of solar cells comprising a selective emitter using an improved etching-paste composition which has significantly improved selectivity for silicon layers

Abstract: The present invention refers to a method for contactless deposition of new etching compositions onto surfaces of semiconductor devices as well as to the subsequent etching of functional layers being located on top of these semiconductor devices. Said functional layers may serve as surface passivation layers and/or anti-reflective coatings (ARCs).

Abstract: The object of the present invention is a new inkjet printable etching composition comprising an etchant, which is activated by a second component. Thus, a further object is the use of this new composition in a process for the etching of surfaces semiconductor devices or surfaces of solar cell devices.

Abstract: The present invention relates to a fast and inexpensive method which can be carried out locally for the wet-chemical edge deletion of “solar modules” by applying etching pastes which are suitable for this purpose and, when the reaction is complete, removing the paste residues or cleaning the substrate surface in a suitable manner. An etching paste newly developed for the purpose is employed in the method.

Abstract: The present invention relates to compositions, which are useful for the generation of patterned or structured SiO2-layers or of SiO2-lines during the manufacturing process of semiconductor devices, and which are suitable for the application in inkjet operations. The present invention also relates to a modified process of manufacturing semiconductor devices taking advantage of these new compositions.

Abstract: A method for determining the temperature or the ohmic resistance of an electrical component, especially of a coil of a magnetic valve. The component temperature is estimated with the aid of a temperature model, which is able to determine the curve of the component temperature even during a control of the valve. The temperature model is corrected regularly based on the measured value, in this context.

Abstract: A method for determining the temperature or the ohmic resistance of an electrical component, especially of a coil of a magnetic valve. The component temperature is estimated with the aid of a temperature model, which is able to determine the curve of the component temperature even during a control of the valve. The temperature model is corrected regularly based on the measured value, in this context.

Abstract: The electronic semiconductor component has a crystalline wafer substrate with an active surface and a semiconductor layer coating the active surface. So that the semiconductor layer has a few surface defects the crystalline wafer substrate is a sapphire or silicon carbide single crystal and the active surface has a pit density of less than 500 pit/cm2, preferably less than 100 pit/cm2. The polishing method for obtaining the active surface with these pit densities includes polishing with a polishing agent, such as a silicon suspension, and a polishing tool, which is pressed on the active surface with a pressure of preferably from 0.05 to 0.2 kg/cm2 and moved over the active surface with polishing motions distributed statistically and uniformly over a 360° angle during polishing.

Abstract: Method for connecting an optical fiber to a GRIN lens, and a method for producing an optical filter module having an optical fiber and a GRIN lens, comprising arranging the optical fiber in contact with or in the immediate vicinity of the GRIN lens, directing a laser beam onto a part of the optical fiber and/or a part of the GRIN lens, the laser beam heating at least a part of the optical fiber and/or a part of the GRIN lens in such a way that a connection is formed between the optical fiber and the GRIN lens, and the optical axis of the laser beam being aligned oblique to the optical axis of the optical fiber, as well as optical filter modules produced in accordance with the method.

Abstract: The method of making an especially low-stress wafer substrate with an active surface to be coated with few surface defects that produce coating defects includes polishing the active surface with the help of a polishing tool in order to smooth it and changing a polishing direction of the polishing tool performing the polishing over the active surface so that each site or location on the surface is polished with polishing motions distributed statistically and uniformly over a 360° angle.

Abstract: A method for making a substrate wafer for a low-defect semiconductor component is described. In this method a single crystal having a [0001] surface perpendicular to a c-axis thereof is formed, subdivided into thin disks each with at least one disk surface to be coated, the at least one disk surface is smoothed and the thin disks are tempered at a temperature above 1770 K. Preferably the tempering occurs for at least 10 minutes at temperatures greater than 1770 K in a dust-poor atmosphere with a reduced oxygen partial pressure. Al2O3 is a preferred material for the single crystal.

Abstract: An injection assembly for an injection molding machine, with a continuously operating plasticizing unit, includes a piston-type injection unit and an arrangement for intermediate storage and discharge of melt. Several melt reservoirs with melt inlet openings are provided between the plasticizing unit and the piston-type injection unit. Melt lines that connect the melt reservoirs with each other and with the plasticizing unit extend to the melt inlet openings. The melt reservoirs include actuatable work pistons for discharging the melt, wherein the work pistons can open and close the melt inlet openings in the melt reservoirs to divert the melt flow. The disclosed injection unit increases the total volume of bufferable melt and allows individual and separate adjustment of the reservoir volumes and the discharge velocity of the individual melt reservoirs. In addition, switching valves can be eliminated since the melt flow is switched by the work pistons.