Patents by Inventor Ingo Weitzel

Ingo Weitzel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4851672
    Abstract: A specimen mount for secondary ion mass spectrometry, as well for other sensitive particle beam analysis methods, has a rotatable support element to which at least one carrier is secured, a specimen being affixed to a free end of the carrier. The dimensions of the carrier in directions perpendicular to the propagation direction of the ion or particle beam are smaller than the dimensions of the specimen mounted thereon, so that only the specimen, and no surrounding environment, is in the beam path. The rotatable element is driven so as to move one or more of the carriers with the specimens mounted thereon through the beam path.
    Type: Grant
    Filed: August 20, 1984
    Date of Patent: July 25, 1989
    Assignee: Siemens Aktiengesellschaft
    Inventors: Rolf Von Criegern, Ingo Weitzel
  • Patent number: 4645929
    Abstract: A method and an apparatus are provided for the compensation of charges in the secondary ion mass spectrometry of specimens exhibiting poor electrical conductivity. A scanning ion gun and an electron gun allow secondary ion mass spectra specimens exhibiting poor electrical conductivity to be registered under better-defined conditions than heretofore possible. The electron beam of the electron gun is focused to approximately the same diameter as the ion beam and impinges approximately the same point on the surface of the specimen as the ion beam.
    Type: Grant
    Filed: January 31, 1985
    Date of Patent: February 24, 1987
    Assignee: Siemens Aktiengesellschaft
    Inventors: Rolf V. Criegern, Ingo Weitzel
  • Patent number: 4465935
    Abstract: An electrically conductive sample support mounting for the analysis technique of secondary ion mass spectrometry employs a sample plate accommodating the sample. At the sample plate surface facing an ion beam or neutral particle beam, the sample is arranged in an environment-free fashion fully in the interior of the region impinged or scanned by the ion beam or neutral particle beam. Through the creation of a so-called orifice, interfering influences which can arise from a crater rim and from its surroundings are entirely eliminated. The invention is applied in the case of depth profile measurement of ion-implanted doping materials in semiconductor crystal disks and for the purpose of ultrasensitive trace analysis in solids.
    Type: Grant
    Filed: May 24, 1982
    Date of Patent: August 14, 1984
    Assignee: Siemens Aktiengesellschaft
    Inventors: Rolf von Criegern, Ingo Weitzel