Patents by Inventor Ingold Janssen

Ingold Janssen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • System and method for anisotropically etching a recess in a silicon substrate
    Patent number: 7799691
    Abstract: A method and apparatus for anisotropically etching a recess in a silicon substrate is disclosed. Generally, a plasma is used for energetic excitation of a reactive etching gas, wherein the reactive etching gas is a constituent of a continuous gas flow. A recess is anisotropically etched in a silicon substrate using the reactive etching gas, during which time the recess id deepened by at least fifty micrometers without interrupting the gas flow of the reactive etching gas.
    Type: Grant
    Filed: January 10, 2006
    Date of Patent: September 21, 2010
    Assignee: Infineon Technologies AG
    Inventors: Thorsten Hanewald, Andreas Hauser, Ingold Janssen, Kai-Olaf Subke
  • System and method for anisotropically etching a recess in a silicon substrate
    Publication number: 20060175292
    Abstract: An explanation is given of a method in which a plasma is used for energetic excitation of a reactive etching gas. The reactive etching gas is a constituent of a continuous gas flow. A recess is deepened by at least fifty micrometers without interrupting the gas flow in the meantime, with the result that a simple method for producing deep recesses is specified.
    Type: Application
    Filed: January 10, 2006
    Publication date: August 10, 2006
    Inventors: Thorsten Hanewald, Andreas Hauser, Ingold Janssen, Kai-Olaf Subke