Abstract: A method of manufacturing a semiconductor device comprising a field effect transistor having an insulated gate electrode (11) of doped polycrystalline silicon, which is provided on a surface (5) of a semiconductor substrate (1), in which further source and drain zones (17, 18) of the transistor are formed. The source and drain zones (17, 18) and the gate electrode (11) are provided in a self-registered manner with a top layer of a metal silicide (27). According to the invention, during the formation of the gate electrode (11) in a layer of polycrystalline silicon (7), an etching mask (10) containing silicon nitride is used. Thus, without the gate oxide (6) lying under the layer of polycrystalline silicon (7) being covered with organic residues that can be removed only with difficulty, a gate electrode (11) can be otained with side edges (12) directed transversely to the surface (5).