Abstract: A photodiode device includes a semiconductor substrate with a main surface, the semiconductor substrate being of a first type of electric conductivity. The main surface includes at least one incidence area for electromagnetic radiation. A plurality of doped wells of a second type of electric conductivity are arranged at the main surface of the substrate, the second type of electric conductivity being opposite to the first type of electric conductivity. The doped wells and the substrate are electrically contactable. The doped wells are arranged along a perimeter of the at least one incidence area, such that a center region of the incidence area is free from the doped wells.

Abstract: A semiconductor device for infrared detection comprises a stack of a first semiconductor layer, a second semiconductor layer and an optical coupling layer. The first semiconductor layer has a first type of conductivity and the second semiconductor layer has a second type of conductivity. The optical coupling layer comprises an optical coupler and at least a first lateral absorber region. The optical coupler is configured to deflect incident light towards the first lateral absorber region. The first lateral absorber region comprises an absorber material with a bandgap Eg in the infrared, IR.

Abstract: A photodiode device includes a semiconductor substrate with a main surface, the semiconductor substrate being of a first type of electric conductivity. At least one doped well of a second type of electric conductivity is arranged at the main surface of the substrate, the second type of electric conductivity being opposite to the first type of electric conductivity. The at least one doped well and the substrate are electrically contactable. A cover layer is arranged on the main surface of the substrate. The cover layer is at least one of an epi-layer of the first type of electric conductivity and a dielectric surface passivation layer comprising a plurality of space charges, or a combination thereof.

Abstract: A semiconductor device for infrared detection comprises a stack of a first semiconductor layer, a second semiconductor layer and an optical coupling layer. The first semiconductor layer has a first type of conductivity and the second semiconductor layer has a second type of conductivity. The optical coupling layer comprises an optical coupler and at least a first lateral absorber region. The optical coupler is configured to deflect incident light towards the first lateral absorber region. The first lateral absorber region comprises an absorber material with a bandgap Eg in the infrared, IR.

Abstract: The near-infrared photodetector semiconductor device comprises a semiconductor layer (1) of a first type of conductivity with a main surface (10), a trench or a plurality of trenches (2) in the semiconductor layer at the main surface, a SiGe alloy layer (3) in the trench or the plurality of trenches, and an electrically conductive filling material of a second type of conductivity in the trench or the plurality of trenches, the second type of conductivity being opposite to the first type of conductivity.

Abstract: The near-infrared photodetector semiconductor device comprises a semiconductor layer (1) of a first type of conductivity with a main surface (10), a trench or a plurality of trenches (2) in the semiconductor layer at the main surface, a SiGe alloy layer (3) in the trench or the plurality of trenches, and an electrically conductive filling material of a second type of conductivity in the trench or the plurality of trenches, the second type of conductivity being opposite to the first type of conductivity.

Abstract: A lateral avalanche photodiode device comprises a semiconductor substrate (1) having a trench (4) with side walls (5) extending from a main surface (2) to a rear surface (3). A first doped region (11) is present at the side walls of the trench, and a second doped region (12) is arranged at a distance from the first doped region. A third doped region (13) is located adjacent to the first doped region, extends through the substrate from the main surface to the rear surface, and is arranged between the first doped region and the second doped region. The third doped region (13) is the avalanche multiplication region of the photodiode structure. The second doped region and the third doped region have a first type of conductivity, and the first doped region has a second type of conductivity which is opposite to the first type of conductivity. The region of the substrate that is between the first doped region and the second doped region is of the first type of conductivity.

Abstract: The photodiode has a p-type doped region (2) and an n-type doped region (3) in a semiconductor body (1), and a pn junction (4) between the p-type doped region and the n-type doped region. The semiconductor body has a cavity (5) such that the pn junction (4) has a distance (d) of at most 30 ?m from the bottom of the cavity (7).

Abstract: A lateral avalanche photodiode device comprises a semiconductor substrate (1) having a trench (4) with side walls (5) extending from a main surface (2) to a rear surface (3). A first doped region (11) is present at the side walls of the trench, and a second doped region (12) is arranged at a distance from the first doped region. A third doped region (13) is located adjacent to the first doped region, extends through the substrate from the main surface to the rear surface, and is arranged between the first doped region and the second doped region. The third doped region (13) is the avalanche multiplication region of the photodiode structure. The second doped region and the third doped region have a first type of conductivity, and the first doped region has a second type of conductivity which is opposite to the first type of conductivity. The region of the substrate that is between the first doped region and the second doped region is of the first type of conductivity.

Abstract: The photodiode has a p-type doped region (2) and an n-type doped region (3) in a semiconductor body (1), and a pn junction (4) between the p-type doped region and the n-type doped region. The semiconductor body has a cavity (5) such that the pn junction (4) has a distance (d) of at most 30 ?m from the bottom of the cavity (7).