Patents by Inventor Ingrid Koslow

Ingrid Koslow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor body and method for producing a semiconductor body
    Patent number: 11626531
    Abstract: A semiconductor body and a method for producing a semiconductor body are disclosed. In an embodiment a semiconductor body includes a p-conducting region, wherein the p-conducting region has at least one barrier zone and a contact zone, wherein the barrier zone has a first magnesium concentration and a first aluminum concentration, wherein the contact zone has a second magnesium concentration and a second aluminum concentration, wherein the first aluminum concentration is greater than the second aluminum concentration, wherein the first magnesium concentration is at least ten times less than the second magnesium concentration, wherein the contact zone forms an outwardly exposed surface of the semiconductor body, and wherein the barrier zone adjoins the contact zone, and wherein the semiconductor body is based on a nitride compound semiconductor material.
    Type: Grant
    Filed: August 24, 2018
    Date of Patent: April 11, 2023
    Assignee: OSRAM OLED GMBH
    Inventors: Massimo Drago, Alexander Frey, Joachim Hertkorn, Ingrid Koslow
  • Semiconductor body and method for producing a semiconductor body
    Patent number: 11502224
    Abstract: A semiconductor body main include a III-V compound semiconductor material having a p-conductive region doped with a p-dopant. The p-conductive region may include at least one first section, one second section, and one third section. The second section may be arranged between the first and third sections. The second section may directly adjoin the first and third sections. An indium concentration of at least one of the sections differs from an indium concentration of the other two sections.
    Type: Grant
    Filed: June 14, 2018
    Date of Patent: November 15, 2022
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Ingrid Koslow, Massimo Drago, Joachim Hertkorn, Alexander Frey
  • SEMICONDUCTOR BODY AND METHOD FOR PRODUCING A SEMICONDUCTOR BODY
    Publication number: 20210091267
    Abstract: A semiconductor body main include a III-V compound semiconductor material having a p-conductive region doped with a p-dopant. The p-conductive region may include at least one first section, one second section, and one third section. The second section may be arranged between the first and third sections. The second section may directly adjoin the first and third sections. An indium concentration of at least one of the sections differs from an indium concentration of the other two sections.
    Type: Application
    Filed: June 14, 2018
    Publication date: March 25, 2021
    Inventors: Ingrid KOSLOW, Massimo DRAGO, Joachim HERTKORN, Alexander FREY
  • Semiconductor Body and Method for Producing a Semiconductor Body
    Publication number: 20200381579
    Abstract: A semiconductor body and a method for producing a semiconductor body are disclosed. In an embodiment a semiconductor body includes a p-conducting region, wherein the p-conducting region has at least one barrier zone and a contact zone, wherein the barrier zone has a first magnesium concentration and a first aluminum concentration, wherein the contact zone has a second magnesium concentration and a second aluminum concentration, wherein the first aluminum concentration is greater than the second aluminum concentration, wherein the first magnesium concentration is at least ten times less than the second magnesium concentration, wherein the contact zone forms an outwardly exposed surface of the semiconductor body, and wherein the barrier zone adjoins the contact zone, and wherein the semiconductor body is based on a nitride compound semiconductor material.
    Type: Application
    Filed: August 24, 2018
    Publication date: December 3, 2020
    Inventors: Massimo Drago, Alexander Frey, Joachim Hertkorn, Ingrid Koslow
  • Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays
    Patent number: 8841691
    Abstract: A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.
    Type: Grant
    Filed: August 19, 2013
    Date of Patent: September 23, 2014
    Assignee: The Regents of the University of California
    Inventors: Jacob J. Richardson, Daniel B. Thompson, Ingrid Koslow, Jun-Seok Ha, Frederick F. Lange, Steven P. DenBaars, Shuji Nakamura
  • HIGH BRIGHTNESS LIGHT EMITTING DIODE COVERED BY ZINC OXIDE LAYERS ON MULTIPLE SURFACES GROWN IN LOW TEMPERATURE AQUEOUS SOLUTION
    Publication number: 20140103361
    Abstract: A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.
    Type: Application
    Filed: December 19, 2013
    Publication date: April 17, 2014
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Daniel B. Thompson, Jacob J. Richardson, Ingrid Koslow, Jun Seok Ha, Frederick F. Lange, Steven P. DenBaars, Shuji Nakamura
  • High brightness light emitting diode covered by zinc oxide layers on multiple surfaces grown in low temperature aqueous solution
    Patent number: 8637334
    Abstract: A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.
    Type: Grant
    Filed: November 3, 2010
    Date of Patent: January 28, 2014
    Assignee: The Regents of the University of California
    Inventors: Daniel B. Thompson, Jacob J. Richardson, Ingrid Koslow, Jun Seok Ha, Steven P. DenBaars, Shuji Nakamura, Maryann E. Lange
  • LIGHT EMITTING DIODE STRUCTURE UTILIZING ZINC OXIDE NANOROD ARRAYS ON ONE OR MORE SURFACES, AND A LOW COST METHOD OF PRODUCING SUCH ZINC OXIDE NANOROD ARRAYS
    Publication number: 20130328012
    Abstract: A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.
    Type: Application
    Filed: August 19, 2013
    Publication date: December 12, 2013
    Applicant: The Regents of the University of California
    Inventors: Jacob J. Richardson, Daniel B. Thompson, Ingrid Koslow, Jun-Seok Ha, Frederick F. Lange, Steven P. DenBaars, Shuji Nakamura
  • Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays
    Patent number: 8536618
    Abstract: A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.
    Type: Grant
    Filed: November 3, 2010
    Date of Patent: September 17, 2013
    Assignee: The Regents of the University of California
    Inventors: Jacob J. Richardson, Daniel B. Thompson, Ingrid Koslow, Jun Seok Ha, Steven P. DenBaars, Shuji Nakamura, Maryann E. Lange
  • HIGH BRIGHTNESS LIGHT EMITTING DIODE COVERED BY ZINC OXIDE LAYERS ON MULTIPLE SURFACES GROWN IN LOW TEMPERATURE AQUEOUS SOLUTION
    Publication number: 20110266551
    Abstract: A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.
    Type: Application
    Filed: November 3, 2010
    Publication date: November 3, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Daniel B. Thompson, Jacob J. Richardson, Ingrid Koslow, Jun Seok Ha, Frederick F. Lange, Steven P. DenBaars, Shuji Nakamura, Maryann E. Lange
  • LIGHT EMITTING DIODE STRUCTURE UTILIZING ZINC OXIDE NANOROD ARRAYS ON ONE OR MORE SURFACES, AND A LOW COST METHOD OF PRODUCING SUCH ZINC OXIDE NANOROD ARRAYS
    Publication number: 20110108873
    Abstract: A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.
    Type: Application
    Filed: November 3, 2010
    Publication date: May 12, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Jacob J. Richardson, Daniel B. Thompson, Ingrid Koslow, Jun Seok Ha, Frederick F. Lange, Steven P. DenBaars, Shuji Nakamura