Patents by Inventor Ingunn BURUD

Ingunn BURUD has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for determining the thermal donor concentration of a semiconductor sample
    Patent number: 11946869
    Abstract: A method for determining the thermal donor concentration of a test sample made of a semiconductor material, includes providing a reference sample made of the same semiconductor material and having a known thermal donor concentration; measuring a photoluminescence signal of the reference sample for a photon energy comprised between 0.65 eV and 0.8 eV, the photoluminescence signal of the reference sample exhibiting an intensity peak in a photon energy range of 0.65 eV to 0.8 eV; determining, from the photoluminescence signal, an experimental relationship between the thermal donor concentration and a parameter representative of the intensity peak; measuring a photoluminescence signal of the test sample for at least one photon energy comprised between 0.65 eV and 0.8 eV; determining from the photoluminescence signal a specific value of the parameter; and determining the thermal donor concentration from the specific value of the parameter by using the experimental relationship.
    Type: Grant
    Filed: September 13, 2019
    Date of Patent: April 2, 2024
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, NORWEGIAN UNIVERSITY OF LIFE SCIENCES
    Inventors: Torbjørn Mehl, Espen Olsen, Ingunn Burud, Lisa Kvalbein, Elénore Letty, Wilfried Favre, Jordi Veirman
  • METHOD FOR DETERMINING THE THERMAL DONOR CONCENTRATION OF A SEMICONDUCTOR SAMPLE
    Publication number: 20220050055
    Abstract: A method for determining the thermal donor concentration of a test sample made of a semiconductor material, includes providing a reference sample made of the same semiconductor material and having a known thermal donor concentration; measuring a photoluminescence signal of the reference sample for a photon energy comprised between 0.65 eV and 0.8 eV, the photoluminescence signal of the reference sample exhibiting an intensity peak in a photon energy range of 0.65 eV to 0.8 eV; determining, from the photoluminescence signal, an experimental relationship between the thermal donor concentration and a parameter representative of the intensity peak; measuring a photoluminescence signal of the test sample for at least one photon energy comprised between 0.65 eV and 0.8 eV; determining from the photoluminescence signal a specific value of the parameter; and determining the thermal donor concentration from the specific value of the parameter by using the experimental relationship.
    Type: Application
    Filed: September 13, 2019
    Publication date: February 17, 2022
    Inventors: Torbjørn MEHL, Espen OLSEN, Ingunn BURUD, Lisa KVALBEIN, Elénore LETTY, Wilfried FAVRE, Jordi VEIRMAN