Abstract: An example column redundancy circuit of a memory device comprises a pre-decoder circuit, a main decoder circuit, and a shift logic circuit. The pre-decoder circuit is configured to receive a lower column address from a plurality of fault column addresses and perform a first decoding operation, and to receive an upper column address from the plurality of fault column address and perform a second decoding operation. The main decoder circuit includes a plurality of main decoders, and each main decoder is configured to receive a lower signal and one or more upper signals from the pre-decoder circuit and to perform a main decoding operation. The shift logic circuit includes a plurality of shift logics, and each shift logic is configured to generate a shift signal that performs a column shift operation according to a result of the main decoding operation.

Abstract: An integrated circuit includes is provided. The integrated circuit includes: a plurality of bit lines spaced apart from each other along a first direction and extending in a second direction perpendicular to the first direction through a first sub-array and a second sub-array neighboring the first sub-array in the second direction. Each of the plurality of bit lines includes: a first metal wiring extending in the second direction, the first metal wiring including a first portion and a second portion that is separated from the first portion by a first cutting portion; a third metal wiring extending in the second direction, and at least partially overlapping the first metal wiring along a third direction perpendicular to the first direction and the second direction; and two bridges electrically connecting the first metal wiring to the third metal wiring.

Abstract: An embedded memory device includes a retention voltage supply circuit outputting a retention voltage in response to a retention activation signal, and a plurality of array voltage supply circuits outputting corresponding array voltages to corresponding bit cells. The plurality of array voltage supply circuits respectively include an array switch providing the retention voltage as a corresponding array voltage in response to the retention activation signal, a power switch providing a power supply voltage as the corresponding array voltage in response to a power gate activation signal, and an auxiliary circuit compensating the corresponding array voltage during a write operation or a read operation.

Abstract: An example column redundancy circuit of a memory device comprises a pre-decoder circuit, a main decoder circuit, and a shift logic circuit. The pre-decoder circuit is configured to receive a lower column address from a plurality of fault column addresses and perform a first decoding operation, and to receive an upper column address from the plurality of fault column address and perform a second decoding operation. The main decoder circuit includes a plurality of main decoders, and each main decoder is configured to receive a lower signal and one or more upper signals from the pre-decoder circuit and to perform a main decoding operation. The shift logic circuit includes a plurality of shift logics, and each shift logic is configured to generate a shift signal that performs a column shift operation according to a result of the main decoding operation.

Abstract: A memory device includes a bit cell array including a plurality of bit cells connected to a first auxiliary line to which a cell power voltage is supplied; a write driver configured to apply a bit line voltage corresponding to write data to a bit line extending in a column direction of the bit cell array during a write operation; and a write auxiliary circuit connected to the first auxiliary line and a second auxiliary line extending in parallel to the first auxiliary line, and configured to lower a cell power voltage for a first bit cell spaced apart from the write driver during the write operation, wherein the cell power voltage is supplied to the first auxiliary line through the second auxiliary line, and in sequence from the first bit cell to a second bit cell adjacent to the write driver through the first auxiliary line.

Abstract: A memory device includes a cell array including a plurality of static random-access memory (SRAM) cells; a row decoder configured to drive a plurality of word lines of the plurality of SRAM cells based on a row address; a data input/output circuit connected to a plurality of bit lines of the cell array and connected to a sub-power line configured to supply cell voltage to the plurality of SRAM cells; and a word line pulse generator configured to generate a word line pulse with a first pulse width that varies based on the row address and to provide the word line pulse to the row decoder.

Abstract: An embedded memory device includes a retention voltage supply circuit outputting a retention voltage in response to a retention activation signal, and a plurality of array voltage supply circuits outputting corresponding array voltages to corresponding bit cells. The plurality of array voltage supply circuits respectively include an array switch providing the retention voltage as a corresponding array voltage in response to the retention activation signal, a power switch providing a power supply voltage as the corresponding array voltage in response to a power gate activation signal, and an auxiliary circuit compensating the corresponding array voltage during a write operation or a read operation.

Abstract: A semiconductor device includes a substrate including a first memory cell, a second memory cell adjacent to the first memory cell in a first direction, and a comparator circuit adjacent to the first and second memory cells in a second direction intersecting the first direction; a true bit line and a complementary bit line electrically connected to the first and second memory cells and extending in the first direction from a first wiring layer on the substrate; a first power supply wiring on the first wiring layer, extending in the first direction between the true bit line and the complementary bit line and electrically connected to the first and second memory cells; first and second word lines extending in the second direction from a second wiring layer on the substrate different from the first wiring layer; first word line pads on the first wiring layer and electrically connecting the first memory cell to the first word line; second word line pads on the first wiring layer and electrically connecting the sec

Abstract: Disclosed is a static random access memory (SRAM) device. According to example embodiments of the present disclosure, a control logic of the SRAM device may include a tracking circuit connected with metal lines for tracking the number of columns of a memory cell array and the number of rows of the memory cell array. By the tracking circuit, a length of word lines of the memory cell array and a length of bit lines of the memory cell array may be tracked. The control logic of the SRAM device may generate control pulses optimized for the size of the memory cell array, based on a tracking result(s) of the tracking circuit. Accordingly, a power and a time necessary for a write operation and a read operation may be reduced.

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

Abstract: A semiconductor device includes a substrate including a first memory cell, a second memory cell adjacent to the first memory cell in a first direction, and a comparator circuit adjacent to the first and second memory cells in a second direction intersecting the first direction; a true bit line and a complementary bit line electrically connected to the first and second memory cells and extending in the first direction from a first wiring layer on the substrate; a first power supply wiring on the first wiring layer, extending in the first direction between the true bit line and the complementary bit line and electrically connected to the first and second memory cells; first and second word lines extending in the second direction from a second wiring layer on the substrate different from the first wiring layer; first word line pads on the first wiring layer and electrically connecting the first memory cell to the first word line; second word line pads on the first wiring layer and electrically connecting the sec

Abstract: An integrated circuit includes is provided. The integrated circuit includes: a plurality of bit lines spaced apart from each other along a first direction and extending in a second direction perpendicular to the first direction through a first sub-array and a second sub-array neighboring the first sub-array in the second direction. Each of the plurality of bit lines includes: a first metal wiring extending in the second direction, the first metal wiring including a first portion and a second portion that is separated from the first portion by a first cutting portion; a third metal wiring extending in the second direction, and at least partially overlapping the first metal wiring along a third direction perpendicular to the first direction and the second direction; and two bridges electrically connecting the first metal wiring to the third metal wiring.

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

Abstract: Disclosed is a static random access memory (SRAM) device. According to example embodiments of the present disclosure, a control logic of the SRAM device may include a tracking circuit connected with metal lines for tracking the number of columns of a memory cell array and the number of rows of the memory cell array. By the tracking circuit, a length of word lines of the memory cell array and a length of bit lines of the memory cell array may be tracked. The control logic of the SRAM device may generate control pulses optimized for the size of the memory cell array, based on a tracking result(s) of the tracking circuit. Accordingly, a power and a time necessary for a write operation and a read operation may be reduced.

Abstract: An integrated circuit includes: a first wiring layer on which a first bit line pattern and a positive power supply pattern, a first power supply line landing pad, and a first word line landing pad are formed; a second wiring layer on which a first negative power supply pattern connected to the first power supply line landing pad, and a first word line pattern connected to the first word line landing pad are formed; a third wiring layer on which a second negative power supply pattern connected to the first negative power supply pattern, and a second word line landing pad connected to the first word line pattern are formed; and a fourth wiring layer on which a second word line pattern, connected to the second word line landing pad, are formed.

Abstract: An integrated circuit includes: a first wiring layer on which a first bit line pattern and a positive power supply pattern, a first power supply line landing pad, and a first word line landing pad are formed; a second wiring layer on which a first negative power supply pattern connected to the first power supply line landing pad, and a first word line pattern connected to the first word line landing pad are formed; a third wiring layer on which a second negative power supply pattern connected to the first negative power supply pattern, and a second word line landing pad connected to the first word line pattern are formed; and a fourth wiring layer on which a second word line pattern, connected to the second word line landing pad, are formed.

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.