Patents by Inventor Inisk Jin

Inisk Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • STRUCTURES FOR RESISTIVE RANDOM ACCESS MEMORY CELLS
    Publication number: 20100110758
    Abstract: A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.
    Type: Application
    Filed: October 31, 2008
    Publication date: May 6, 2010
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Shaoping Li, Inisk Jin, Zheng Gao, Eileen Yan, Kaizhong Gao, Haiwen Xi, Song Xue