Abstract: Embodiments of the present disclosure provide a method for setting, by a computing device, a bias voltage of a driver integrated circuit that supplies voltage to a display panel. The method includes: selecting one of a plurality of pre-stored scenarios based on a change in a flicker index and applying a bias voltage to the display panel according to a level based on the selected scenario, and recording, to the driver integrated circuit, a level of the bias voltage which corresponds to a minimum value in a fitted quadratic function. According to a system and a method for setting the bias voltage according to embodiments of the present disclosure, the level of the bias voltage that minimizes the flicker phenomenon by minimizing a change in luminance of the display panel based on the bias voltage can be calculated through minimal measurements.

Abstract: A pixel includes: a light emitting element; a first transistor generating a driving current flowing from a first power line to a second power line; a second transistor being turned on in response to a fourth scan signal; a third transistor being turned on in response to a second scan signal; a fourth transistor being turned on in response to a first scan signal; a fifth transistor being turned on in response to a third scan signal; a sixth transistor being turned off in response to a first emission control signal; a first capacitor; and a second capacitor. A period in which the second transistor is turned on and a period in which the third transistor is turned on do not overlap with each other.

Abstract: A pixel includes: a light emitting element; a first transistor generating a driving current flowing from a first power line to a second power line; a second transistor being turned on in response to a fourth scan signal; a third transistor being turned on in response to a second scan signal; a fourth transistor being turned on in response to a first scan signal; a fifth transistor being turned on in response to a third scan signal; a sixth transistor being turned off in response to a first emission control signal; a first capacitor; and a second capacitor. A period in which the second transistor is turned on and a period in which the third transistor is turned on do not overlap with each other.

Abstract: A display device includes: a substrate; an active layer; a first insulating layer on the active layer; a gate electrode; a second insulating layer on the first conductive layer; a second conductive layer on the second insulating layer; a third insulating layer on the second conductive layer; and a source electrode connected to the source region of the first active pattern through a contact hole passing through the first insulating layer and the second insulating layer, and a drain electrode connected to the drain region, wherein the first active pattern, the gate electrode, the source electrode and the drain electrode constitute a thin film transistor, the display device further comprising at least one light shielding pattern around the thin film transistor, wherein the light shielding pattern includes a side light shielding pattern such that the third conductive layer passes through at least the third insulating layer.

Abstract: A display device includes a scan line that extends in a first direction on a substrate and that transmits a scan signal; a data line that extends in a second direction that intersects the first direction and that transmits a data signal; a driving voltage line that extends in the second direction and that transmits a driving voltage; a transistor that includes a second transistor connected to the scan line and the data line and a first transistor connected to the second transistor; a light emitting device connected to the transistor; and a conductive pattern disposed between the substrate and the first transistor, where each of the first and second transistors includes an active pattern with a stacked first semiconductor layer and a second semiconductor layer, which have different crystalline states.

Abstract: A display device includes: a substrate; an active layer; a first insulating layer on the active layer; a gate electrode; a second insulating layer on the first conductive layer; a second conductive layer on the second insulating layer; a third insulating layer on the second conductive layer; and a source electrode connected to the source region of the first active pattern through a contact hole passing through the first insulating layer and the second insulating layer, and a drain electrode connected to the drain region, wherein the first active pattern, the gate electrode, the source electrode and the drain electrode constitute a thin film transistor, the display device further comprising at least one light shielding pattern around the thin film transistor, wherein the light shielding pattern includes a side light shielding pattern such that the third conductive layer passes through at least the third insulating layer.

Abstract: A thin film transistor includes a first blocking layer disposed on a substrate, and an active pattern disposed on the first blocking layer. The active pattern includes a source region, a drain region, and a channel region disposed between the source region and the drain region. The thin film transistor further includes a gate electrode disposed on the active pattern. The channel region corresponds to a portion of the active pattern overlapped by the gate electrode. The thin film transistor additionally includes a source electrode connected to the source region, and a drain electrode connected to the drain region. The active pattern includes a first part and a second part. The first part partially overlaps with the first blocking layer, and the first part and the second part have different thicknesses from each other.

Abstract: A display device includes a scan line that extends in a first direction on a substrate and that transmits a scan signal; a data line that extends in a second direction that intersects the first direction and that transmits a data signal; a driving voltage line that extends in the second direction and that transmits a driving voltage; a transistor that includes a second transistor connected to the scan line and the data line and a first transistor connected to the second transistor; a light emitting device connected to the transistor; and a conductive pattern disposed between the substrate and the first transistor, where each of the first and second transistors includes an active pattern with a stacked first semiconductor layer and a second semiconductor layer, which have different crystalline states.

Abstract: A method of manufacturing a flexible display device includes forming a base substrate on a first sacrificial layer formed on a first supporting substrate, forming a display device array on the base substrate, forming a second sacrificial layer on a second supporting substrate, forming a touch array on the second sacrificial layer, adhering the first supporting substrate onto the second supporting substrate using an adhesive, irradiating laser energy onto the first sacrificial layer to remove the first sacrificial layer and separate the first supporting substrate from the base substrate, and irradiating laser energy onto the second sacrificial layer to separate interfaces of the second supporting substrate and the second sacrificial layer from each other, such that the second sacrificial layer is fixed on the touch array. The second sacrificial layer includes at least one of oxidized molybdenum, lead zirconate titanate, gallium nitride, and an amorphous silicon based inorganic material.

Abstract: A display device includes a scan line that extends in a first direction on a substrate and that transmits a scan signal; a data line that extends in a second direction that intersects the first direction and that transmits a data signal; a driving voltage line that extends in the second direction and that transmits a driving voltage; a transistor that includes a second transistor connected to the scan line and the data line and a first transistor connected to the second transistor; a light emitting device connected to the transistor; and a conductive pattern disposed between the substrate and the first transistor, where each of the first and second transistors includes an active pattern with a stacked first semiconductor layer and a second semiconductor layer, which have different crystalline states.

Abstract: A display device includes: a substrate including a display area at which an image is displayed with light and a pad region at which the image is not displayed; a plurality of pads through which a signal is applied to the display area, the pads disposed in the pad region; a first insulating layer disposed between adjacent pads among the plurality of pads, in which a first opening is defined which exposes a respective pad among the adjacent pads; a second insulating layer disposed in the first opening of the first insulating layer, in which a second opening is defined which exposes the respective pad exposed by the first opening of the first insulating layer; and silver particles disposed in the first opening, between the first insulating layer and the second insulating layer.

Abstract: A method of manufacturing a flexible display device includes forming a base substrate on a first sacrificial layer formed on a first supporting substrate, forming a display device array on the base substrate, forming a second sacrificial layer on a second supporting substrate, forming a touch array on the second sacrificial layer, adhering the first supporting substrate onto the second supporting substrate using an adhesive, irradiating laser energy onto the first sacrificial layer to remove the first sacrificial layer and separate the first supporting substrate from the base substrate, and irradiating laser energy onto the second sacrificial layer to separate interfaces of the second supporting substrate and the second sacrificial layer from each other, such that the second sacrificial layer is fixed on the touch array, The second sacrificial layer includes at least one of oxidized molybdenum, lead zirconate titanate, gallium nitride, and an amorphous silicon based inorganic material.

Abstract: A thin film transistor array panel according to an exemplary embodiment includes: a substrate; a metal pattern positioned on the substrate; a buffer layer positioned on the metal pattern; and a semiconductor layer positioned on the buffer layer and including a source region, a channel region, and a drain region, wherein the metal pattern overlaps at least one of the source region and the drain region, and the metal pattern does not overlap the channel region.

Abstract: A method of manufacturing a flexible display device includes forming a base substrate on a first sacrificial layer formed on a first supporting substrate, forming a display device array on the base substrate, forming a second sacrificial layer on a second supporting substrate, forming a touch array on the second sacrificial layer, adhering the first supporting substrate onto the second supporting substrate using an adhesive, irradiating laser energy onto the first sacrificial layer to remove the first sacrificial layer and separate the first supporting substrate from the base substrate, and irradiating laser energy onto the second sacrificial layer to separate interfaces of the second supporting substrate and the second sacrificial layer from each other, such that the second sacrificial layer is fixed on the touch array, The second sacrificial layer includes at least one of oxidized molybdenum, lead zirconate titanate, gallium nitride, and an amorphous silicon based inorganic material.

Abstract: A thin film transistor includes a first blocking layer disposed on a substrate, and an active pattern disposed on the first blocking layer. The active pattern includes a source region, a drain region, and a channel region disposed between the source region and the drain region. The thin film transistor further includes a gate electrode disposed on the active pattern. The channel region corresponds to a portion of the active pattern overlapped by the gate electrode. The thin film transistor additionally includes a source electrode connected to the source region, and a drain electrode connected to the drain region. The active pattern includes a first part and a second part. The first part partially overlaps with the first blocking layer, and the first part and the second part have different thicknesses from each other.

Abstract: A thin film transistor includes a first blocking layer disposed on a substrate, and an active pattern disposed on the first blocking layer. The active pattern includes a source region, a drain region, and a channel region disposed between the source region and the drain region. The thin film transistor further includes a gate electrode disposed on the active pattern. The channel region corresponds to a portion of the active pattern overlapped by the gate electrode. The thin film transistor additionally includes a source electrode connected to the source region, and a drain electrode connected to the drain region. The active pattern includes a first part and a second part. The first part partially overlaps with the first blocking layer, and the first part and the second part have different thicknesses from each other.

Abstract: A display device includes: a substrate including a display area at which an image is displayed with light and a pad region at which the image is not displayed; a plurality of pads through which a signal is applied to the display area, the pads disposed in the pad region; a first insulating layer disposed between adjacent pads among the plurality of pads, in which a first opening is defined which exposes a respective pad among the adjacent pads; a second insulating layer disposed in the first opening of the first insulating layer, in which a second opening is defined which exposes the respective pad exposed by the first opening of the first insulating layer; and silver particles disposed in the first opening, between the first insulating layer and the second insulating layer.

Abstract: A thin film transistor array panel according to an exemplary embodiment includes: a substrate; a metal pattern positioned on the substrate; a buffer layer positioned on the metal pattern; and a semiconductor layer positioned on the buffer layer and including a source region, a channel region, and a drain region, wherein the metal pattern overlaps at least one of the source region and the drain region, and the metal pattern does not overlap the channel region.

Abstract: An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a substrate, a plurality of OLEDs provided over the substrate, and a plurality of pixel circuits provided between the substrate and the OLEDs. Each of the pixel circuits comprises a plurality of transistors each including an active pattern electrically connected to the respective OLEDs. A shield layer overlaps the pixel circuits and the active patterns of the transistors in the depth dimension of the OLED display.

Abstract: A thin film transistor includes a first blocking layer disposed on a substrate, and an active pattern disposed on the first blocking layer. The active pattern includes a source region, a drain region, and a channel region disposed between the source region and the drain region. The thin film transistor further includes a gate electrode disposed on the active pattern. The channel region corresponds to a portion of the active pattern overlapped by the gate electrode. The thin film transistor additionally includes a source electrode connected to the source region, and a drain electrode connected to the drain region. The active pattern includes a first part and a second part. The first part partially overlaps with the first blocking layer, and the first part and the second part have different thicknesses from each other.