Patents by Inventor Inna V. Patrick

Inna V. Patrick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low dose super deep source/drain implant
    Patent number: 8120109
    Abstract: A semiconductor device for reducing junction capacitance by an additional low dose super deep source/drain implant and a method for its fabrication are disclosed. In particular, the super deep implant is performed after spacer formation to significantly reduce junction capacitance in the channel region.
    Type: Grant
    Filed: July 22, 2004
    Date of Patent: February 21, 2012
    Assignee: Micron Technology, Inc.
    Inventors: Zhongze Wang, Inna V. Patrick
  • Low dose super deep source/drain implant
    Patent number: 6767778
    Abstract: A semiconductor device for reducing junction capacitance by an additional low dose super deep source/drain implant and a method for its fabrication are disclosed. In particular, the super deep implant is performed after spacer formation to significantly reduce junction capacitance in the channel region.
    Type: Grant
    Filed: August 29, 2002
    Date of Patent: July 27, 2004
    Assignee: Micron Technology, Inc.
    Inventors: Zhongze Wang, Inna V. Patrick
  • Low dose super deep source/drain implant
    Publication number: 20040041170
    Abstract: A semiconductor device for reducing junction capacitance by an additional low dose super deep source/drain implant and a method for its fabrication are disclosed. In particular, the super deep implant is performed after spacer formation to significantly reduce junction capacitance in the channel region.
    Type: Application
    Filed: August 29, 2002
    Publication date: March 4, 2004
    Inventors: Zhongze Wang, Inna V. Patrick