Patents by Inventor Inoue NAOKI

Inoue NAOKI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240128082
    Abstract: A method of manufacturing a semiconductor device includes sequentially disposing a hard mask layer, an organic layer, and a metal-containing photoresist layer on a substrate, patterning the metal-containing photoresist layer to form a first mask pattern exposing a first region of the organic layer, implanting ions into the first region of the organic layer exposed by the first mask pattern, removing the first mask pattern and a second region of the organic layer that is not ion-implanted to form a second mask pattern exposing a partial region of the hard mask layer, and removing the partial region of the hard mask layer exposed by the second mask pattern to form a third mask pattern.
    Type: Application
    Filed: September 25, 2023
    Publication date: April 18, 2024
    Inventors: Inoue NAOKI, Tsunehiro NISHI
  • Publication number: 20240130212
    Abstract: A method of manufacturing a semiconductor device, including forming a plurality of first organic patterns spaced apart from one another in one direction on a supporting layer, wherein the plurality of first organic patterns include ion-implanted patterns, forming a plurality of inorganic patterns on the supporting layer that are in contact with the plurality of first organic patterns and spaced apart from one other in the one direction, wherein the inorganic patterns include ion-implanted patterns, forming a plurality of second organic patterns arranged between the plurality of inorganic patterns on the supporting layer, wherein the second organic patterns include ion-implanted patterns, and selectively etching the ion-implanted inorganic patterns to form a plurality of space patterns that are arranged between the ion-implanted first organic patterns and the ion-implanted second organic patterns.
    Type: Application
    Filed: October 13, 2023
    Publication date: April 18, 2024
    Inventors: Inoue NAOKI, Tsunehiro NISHI, Yonghoon MOON
  • Publication number: 20230151159
    Abstract: A hardmask-forming compound, a hardmask composition, and a method of manufacturing an integrated circuit (IC), the hardmask-forming compound including a moiety represented by Formula 1:
    Type: Application
    Filed: May 12, 2022
    Publication date: May 18, 2023
    Inventors: Inoue NAOKI, Hyunwoo KIM, Tsunehiro NISHI