Abstract: A method of fabricating a metal electrode of a semiconductor device that includes a substrate with unanodized and anodized metal layers thereon includes the steps of forming and patterning a first metal layer, which is not anodizable, to a first predetermined thickness on the substrate; forming and patterning a second metal layer, which is anodized on the substrate forming a mask corresponding to said first metal layer on said second metal layer, and forming a flat surface by anodic oxidation in order that regions other than the first and second metal layers become an insulator having the same vertical elevation as the surface of the substrate. Various preferred embodiments and relationships between thickness of each layer for flattening by anodic oxidation are also given.

Abstract: A method of fabricating a metal electrode of a semiconductor device that includes a substrate with unanodized and anodized metal layers thereon includes the steps of forming a first metal layer, which is anodizable, to a first predetermined thickness on a substrate; forming and patterning a second metal layer, which is not anodizable, to a second predetermined thickness so as to act as a mask on the first metal layer; depositing a third metal layer, that may be anodizable, to a third predetermined thickness; and forming a flat surface on the third layer by anodic oxidation. Various preferred embodiments and relationships between thickness of each layer for flattening by anodic oxidation are also given.

Abstract: A method of fabricating a thin film transistor wherein electrode wirings and an insulating layer are fabricated by depositing on a substrate an aluminum alloy layer to become electrode wiring. An Al.sub.2 O.sub.3 layer having a given thickness is then formed by a first anodization of the aluminum alloy layer. Photoresist patterns are then formed that correspond to the electrode wirings on the Al.sub.2 O.sub.3 layer so as to pattern the aluminum alloy layer. The Al.sub.2 O.sub.3 and aluminum alloy layer is then dry-etched to a predetermined depth using the photoresist patterns as a mask. A second anodization is carried out to form the Al.sub.2 O.sub.3 layer up to the surface of the substrate between the electrode wirings, using the photoresist patterns as a mask, whereby the new anodized Al.sub.2 O.sub.3 layer is used as an insulating layer of the electrode wirings.