Abstract: An extreme ultraviolet (EUV) light source device includes a source droplet generator for generating source droplets as a target source for generating extreme ultraviolet (EUV) light and for injecting the source droplets to a collector, a light irradiator for directing a detection light to an injection path of the source droplets, a light detector for detecting the detection light blocked by the source droplet, and a source droplet controller electrically connected to the light detector and the source droplet generator for analyzing the detection light to determine whether a satellite of the source droplet is generated or to determine a size of the generated satellite and for controlling a formation of a stream of source droplets based on the determination result.

Abstract: A method of manufacturing a semiconductor device includes irradiating a first photoresist layer via a light source, measuring a first exposure intensity of the first photoresist layer, irradiating a second photoresist layer via the light source, measuring a second exposure intensity of the second photoresist layer, subtracting the second exposure intensity from the first exposure intensity, and subsequent to the subtracting, exposing a third photoresist layer formed on a semiconductor substrate by using the light source, wherein an out-of-band (OoB) extreme ultraviolet (EUV) light eliminating layer is formed on the second photoresist layer.

Abstract: A reflective extreme ultraviolet (EUV) mask includes a mask substrate, a reflecting layer on an upper surface of the mask substrate, and an absorbing layer pattern on an upper surface of the reflecting layer, the absorbing layer pattern having an exposing region and a peripheral region, and the absorbing layer pattern including a grating pattern in the peripheral region to reduce reflectivity of light incident on the peripheral region.

Abstract: Reflective masks, and methods of manufacturing the same, include a reflective multi-layer on a mask substrate, a plurality of support patterns spaced apart from one another in the main trench. The plurality of support patterns are in a main trench of the reflective multi-layer. The plurality of support patterns correspond to areas of the reflective mask not transferred onto an exposure target substrate. The support patterns partition the main trench to form a plurality of auxiliary trenches. The reflective mask further includes a light absorption pattern including a plurality of auxiliary light absorption patterns in the auxiliary trenches.

Abstract: A method of manufacturing a semiconductor device includes irradiating a first photoresist layer via a light source, measuring a first exposure intensity of the first photoresist layer, irradiating a second photoresist layer via the light source, measuring a second exposure intensity of the second photoresist layer, subtracting the second exposure intensity from the first exposure intensity, and subsequent to the subtracting, exposing a third photoresist layer formed on a semiconductor substrate by using the light source, wherein an out-of-band (OoB) extreme ultraviolet (EUV) light eliminating layer is formed on the second photoresist layer.

Abstract: A reflective extreme ultraviolet (EUV) mask includes a mask substrate, a reflecting layer on an upper surface of the mask substrate, and an absorbing layer pattern on an upper surface of the reflecting layer, the absorbing layer pattern having an exposing region and a peripheral region, and the absorbing layer pattern including a grating pattern in the peripheral region to reduce reflectivity of light incident on the peripheral region.

Abstract: An extreme ultraviolet (EUV) light source device includes a source droplet generator for generating source droplets as a target source for generating extreme ultraviolet (EUV) light and for injecting the source droplets to a collector, a light irradiator for directing a detection light to an injection path of the source droplets, a light detector for detecting the detection light blocked by the source droplet, and a source droplet controller electrically connected to the light detector and the source droplet generator for analyzing the detection light to determine whether a satellite of the source droplet is generated or to determine a size of the generated satellite and for controlling a formation of a stream of source droplets based on the determination result.

Abstract: Reflective masks, and methods of manufacturing the same, include a reflective multi-layer on a mask substrate, a plurality of support patterns spaced apart from one another in the main trench. The plurality of support patterns are in a main trench of the reflective multi-layer. The plurality of support patterns correspond to areas of the reflective mask not transferred onto an exposure target substrate. The support patterns partition the main trench to form a plurality of auxiliary trenches. The reflective mask further includes a light absorption pattern including a plurality of auxiliary light absorption patterns in the auxiliary trenches.

Abstract: A method of correcting flare includes measuring flare of a test pattern, calculating point spread functions (PSFs) of the flare as a function of distance, and correcting the flare using corresponding PSFs for an influence range of the flare. The influence range is divided into a first range less than a predetermined distance and a second range equal to or greater than the predetermined distance, and corresponding PSFs are separately applied to the first and second ranges to correct the flare.

Abstract: An apparatus and method for generating extreme ultra violet EUV radiation includes a light source providing light to a laser medium to generate a first laser, a droplet generator to provide a droplet to reflect the first laser to one end of the laser medium, a laser generator positioned at the opposite end of the laser medium from that of the droplet and a second laser to expand the droplet or not and to thereby control the conversion efficiency and dose of the EUV generation apparatus.

Abstract: An exposing method includes irradiating a first light having a first energy to a first exposed region of a photoresist film through a first shot region of a mask, and irradiating a second light having a second energy to the first exposed region of the photoresist film through a second shot region of the mask.

Abstract: Provided are a reflective reticle chuck, a reflective illumination system including the chuck, a method of controlling the flatness of a reflective reticle using the chuck, and a method of manufacturing a semiconductor device using the chuck. The reflective reticle chuck includes a fixed portion and a mobile portion that together provide a securing surface for the reflective reticle. The mobile portion may alter a height of the securing surface relative to the fixed portion.

Abstract: In a method of forming fine patterns, a photocurable coating layer is formed on a substrate. A first surface of a template makes contact with the photocurable coating layer. The first surface of the template includes at least two first patterns having a first dispersion degree of sizes, and at least one portion of the first surface of the template includes a photo attenuation member. A light is irradiated onto the photocurable coating layer through the template to form a cured coating layer including second patterns having a second dispersion degree of sizes. The second patterns are generated from the first patterns and the second dispersion degree is less than the first dispersion degree. The template is separate from the cured coating layer. A size dispersion degree of the patterns used in a nanoimprint lithography process may be adjusted by the light attenuation member, so that the fine patterns may be formed to have an improved size dispersion degree.

Abstract: A method of correcting flare includes measuring flare of a test pattern, calculating point spread functions (PSFs) of the flare as a function of distance, and correcting the flare using corresponding PSFs for an influence range of the flare. The influence range is divided into a first range less than a predetermined distance and a second range equal to or greater than the predetermined distance, and corresponding PSFs are separately applied to the first and second ranges to correct the flare.

Abstract: A flare evaluation method includes: extracting DC flare reference data using a preliminary measurement pattern mask and a dummy mask having an open region in which a preliminary measurement pattern is formed; providing a plurality of flare gauge sets including an opaque pad, a measurement pattern, and a flare pattern, the measure pattern being disposed at an inside of the opaque pad to measure strength of a flare, the flare pattern being disposed at an outside of the opaque pad to generate the flare; and detecting a change of a photo resist measurement pattern caused by the flare pattern and the measurement pattern for each of the flare gauge sets, wherein an outer radius of the flare pattern increases by a predetermined amount depending on the flare gauge set.

Abstract: A reflective photomask includes a phase shift object on a substrate, a reflective layer stacked on the substrate and the phase shift object, a capping layer on the reflective layer, the capping layer including at least one surface portion having a bent shape, and a light absorption pattern on the capping layer, the light absorption pattern including at least one slit exposing the surface portion of the capping layer having the bent shape.

Abstract: An exposure apparatus and an exposing method using the apparatus. The exposure apparatus includes a photomask having a plurality of optical sources attached to a substrate.

Abstract: A method of designing a lithographic mask for use in lithographic processing of a substrate is disclosed. The lithographic processing comprises irradiating mask features of a lithographic mask using a predetermined irradiation configuration. In one aspect, the method comprises obtaining an initial design for the lithographic mask comprising a plurality of initial design features having an initial position. The method further comprises applying at least one shift to at least one initial design feature and deriving there from an altered design so as to compensate for shadowing effects when irradiating the substrate using a lithographic mask corresponding to the altered design in the predetermined irradiation configuration. Also disclosed herein are a corresponding design, a method of setting up lithographic processing, a system for designing a lithographic mask, a lithographic mask, and a method of manufacturing it.

Abstract: Provided are a reflective reticle chuck, a reflective illumination system including the chuck, a method of controlling the flatness of a reflective reticle using the chuck, and a method of manufacturing a semiconductor device using the chuck. The reflective reticle chuck includes a fixed portion and a mobile portion that together provide a securing surface for the reflective reticle. The mobile portion may alter a height of the securing surface relative to the fixed portion.

Abstract: A flare evaluation method includes: extracting DC flare reference data using a preliminary measurement pattern mask and a dummy mask having an open region in which a preliminary measurement pattern is formed; providing a plurality of flare gauge sets including an opaque pad, a measurement pattern, and a flare pattern, the measure pattern being disposed at an inside of the opaque pad to measure strength of a flare, the flare pattern being disposed at an outside of the opaque pad to generate the flare; and detecting a change of a photo resist measurement pattern caused by the flare pattern and the measurement pattern for each of the flare gauge sets, wherein an outer radius of the flare pattern increases by a predetermined amount depending on the flare gauge set.