Patents by Inventor InTak CHO
InTak CHO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12178090Abstract: Provided is an electronic device. The electronic device includes at least one first transistor to which a data voltage is applied. The first transistor includes a first conductive layer disposed on a substrate and a first active layer, which is disposed on the first conductive layer, has one end and the other end which are made conductive, and includes a first channel region disposed between the one end and the other end. A second conductive layer overlapping the first conductive layer with a first insulating layer interposed between the second conductive layer and the first conductive layer is included in a storage capacitor in a panel, and the storage capacitor is disposed under the first channel region of the first active layer. In this way, an ultra-high definition panel is fabricated.Type: GrantFiled: July 8, 2020Date of Patent: December 24, 2024Assignee: LG DISPLAY CO., LTD.Inventors: SeHee Park, InTak Cho, PilSang Yun
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Patent number: 11901461Abstract: Disclosed are a thin film transistor, a display apparatus comprising the thin film transistor, and a method for manufacturing the thin film transistor. The thin film transistor comprises an active layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer includes a silicon semiconductor layer, and an oxide semiconductor layer which contacts the silicon semiconductor layer, wherein at least a portion of the silicon semiconductor layer and at least a portion of the oxide semiconductor layer are overlapped with the gate electrode.Type: GrantFiled: September 30, 2022Date of Patent: February 13, 2024Assignee: LG Display Co., Ltd.Inventors: Jaeman Jang, PilSang Yun, Jiyong Noh, InTak Cho
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Publication number: 20230411409Abstract: Disclosed are a display device and a manufacturing method thereof. More particularly, a display device including a substrate, a buffer layer disposed on the substrate, an active layer disposed on the buffer layer, a gate insulating film disposed on the active layer, and a gate electrode disposed on the gate insulating film, wherein the gate insulating film includes a first portion and a second portion, wherein the first portion is closer to the active layer than the second portion and the second portion is closer to the gate electrode than the first portion, and the gate insulating film includes two or more elements having different component concentrations in the first portion and the second portion, and a manufacturing method thereof are provided to provide a transistor structure having high reliability.Type: ApplicationFiled: October 26, 2022Publication date: December 21, 2023Inventors: SungJun YUN, PilSang YUN, Taegyun KIM, MinSu KIM, InTak CHO, ISak LEE
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Patent number: 11777037Abstract: A transistor having a vertical structure can include a substrate, a first electrode disposed on the substrate, a second electrode disposed on the substrate, an insulation pattern disposed between the first electrode and the second electrode, an active layer connected between the first electrode and the second electrode, a channel area of the active layer disposed along a side surface of the insulation pattern and around an upper edge of the insulation pattern, a gate electrode disposed on the active layer, and a gate insulating film disposed between the gate electrode and the active layer.Type: GrantFiled: October 25, 2021Date of Patent: October 3, 2023Assignee: LG DISPLAY CO., LTD.Inventors: InTak Cho, JungSeok Seo, SeHee Park, Jaeyoon Park, SangYun Sung
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Patent number: 11594556Abstract: A thin film transistor substrate can include a buffer layer on a base substrate and having a first buffer layer and a second buffer layer; a semiconductor layer disposed on the buffer layer; a gate insulating film on the semiconductor layer; and a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer. The base substrate, the first buffer layer, the second buffer layer, the semiconductor layer, the gate insulating film and the gate electrode are sequentially stacked, and a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.Type: GrantFiled: July 16, 2021Date of Patent: February 28, 2023Assignee: LG DISPLAY CO., LTD.Inventors: SeHee Park, InTak Cho, DaeHwan Kim, JuHeyuck Baeck, Jiyong Noh
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Patent number: 11588027Abstract: A thin film transistor, a display panel comprising the same and a display apparatus are discussed. The thin film transistor comprises a buffer layer embodied on a substrate, a semiconductor layer embodied on the buffer layer, including a channel area, a first conductor portion and a second conductor portion, a gate insulating film embodied on the semiconductor layer, a gate electrode embodied on the gate insulating film, and an auxiliary electrode overlapped with the second conductor portion, wherein the first conductor portion is extended from one side of the channel area, and becomes a source area, and the second conductor portion is extended from the other side of the channel area, and becomes a drain area.Type: GrantFiled: December 22, 2020Date of Patent: February 21, 2023Assignee: LG DISPLAY CO., LTD.Inventors: InTak Cho, Jiyong Noh, Jaeman Jang, PilSang Yun, Jeyong Jeon
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Patent number: 11574843Abstract: Disclosed is a thin film transistor, a method for manufacturing the same and a display apparatus comprising the same, wherein the thin film transistor includes a first insulating layer on a substrate, an active layer on the first insulating layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer has a single crystal structure of an oxide semiconductor material, and an upper surface of the first insulating layer which contacts the active layer is an oxygen (O) layer made of oxygen (O).Type: GrantFiled: December 16, 2020Date of Patent: February 7, 2023Assignee: LG Display Co., Ltd.Inventors: KyungChul Ok, JungSeok Seo, PilSang Yun, Jiyong Noh, Jaeman Jang, InTak Cho
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Publication number: 20230018306Abstract: Disclosed are a thin film transistor, a display apparatus comprising the thin film transistor, and a method for manufacturing the thin film transistor. The thin film transistor comprises an active layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer includes a silicon semiconductor layer, and an oxide semiconductor layer which contacts the silicon semiconductor layer, wherein at least a portion of the silicon semiconductor layer and at least a portion of the oxide semiconductor layer are overlapped with the gate electrode.Type: ApplicationFiled: September 30, 2022Publication date: January 19, 2023Inventors: Jaeman JANG, PilSang YUN, Jiyong NOH, InTak CHO
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Patent number: 11557680Abstract: A thin film transistor, a method for manufacturing the same and a display apparatus comprising the same are disclosed, in which the thin film transistor comprises a semiconductor formed on a substrate, a gate insulating film formed on the semiconductor, a gate electrode formed on the gate insulating film, a first insulating film formed on the substrate, a first conductor portion formed on the first insulating film and formed at one side of the semiconductor, and a second conductor portion formed on the first insulating film and formed at another side of the semiconductor, wherein a first portion of the first insulating film may be formed between the semiconductor and the first conductor portion, and a second portion of the first insulating film may be formed between the semiconductor and the second conductor portion.Type: GrantFiled: December 15, 2020Date of Patent: January 17, 2023Assignee: LG Display Co., Ltd.Inventors: Jaeman Jang, JungSeok Seo, PilSang Yun, InTak Cho
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Patent number: 11495692Abstract: Disclosed are a thin film transistor, a display apparatus comprising the thin film transistor, and a method for manufacturing the thin film transistor. The thin film transistor comprises an active layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer includes a silicon semiconductor layer, and an oxide semiconductor layer which contacts the silicon semiconductor layer, wherein at least a portion of the silicon semiconductor layer and at least a portion of the oxide semiconductor layer are overlapped with the gate electrode.Type: GrantFiled: December 14, 2020Date of Patent: November 8, 2022Assignee: LG Display Co., Ltd.Inventors: Jaeman Jang, PilSang Yun, Jiyong Noh, InTak Cho
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Publication number: 20220045219Abstract: A transistor having a vertical structure can include a substrate, a first electrode disposed on the substrate, a second electrode disposed on the substrate, an insulation pattern disposed between the first electrode and the second electrode, an active layer connected between the first electrode and the second electrode, a channel area of the active layer disposed along a side surface of the insulation pattern and around an upper edge of the insulation pattern, a gate electrode disposed on the active layer, and a gate insulating film disposed between the gate electrode and the active layer.Type: ApplicationFiled: October 25, 2021Publication date: February 10, 2022Applicant: LG DISPLAY CO., LTD.Inventors: InTak CHO, JungSeok SEO, SeHee PARK, Jaeyoon PARK, SangYun SUNG
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Patent number: 11195862Abstract: A thin film transistor includes an active layer on a substrate, a gate electrode configured to be spaced from the active layer and partially overlapped with the active layer, and a gate insulating layer, at least a part of the gate insulating layer being disposed between the active layer and the gate electrode, wherein the gate insulating layer includes a first gate insulating layer between the active layer and the gate electrode, and a second gate insulating layer configured to have a dielectric constant (k) which is different from a dielectric constant of the first gate insulating layer, and disposed in a same layer as the first gate insulating layer, and wherein at least a part of the second gate insulating layer is disposed between the active layer and the gate electrode.Type: GrantFiled: July 19, 2019Date of Patent: December 7, 2021Assignee: LG DISPLAY CO., LTD.Inventors: Jaeman Jang, InTak Cho
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Patent number: 11177390Abstract: An electronic device can include a panel; a driver circuit configured to drive the panel; and a transistor disposed in the panel, the transistor including a first electrode disposed on a substrate, an insulation pattern disposed on the substrate, the insulation pattern overlapping with an edge of the first electrode, a second electrode disposed on an upper surface of the insulation pattern, an active layer disposed on the first electrode, the insulation pattern and the second electrode, a gate insulating film disposed on the active layer, and a gate electrode disposed on the gate insulating film, in which a first portion of the active layer overlaps with the first electrode, a second portion of the active layer overlaps with the second electrode, and a channel area of the active layer is between the first portion of the active layer and the second portion of the active layer, and the channel area includes a first channel portion disposed along a side surface of the insulation pattern, and a second channel porType: GrantFiled: September 18, 2019Date of Patent: November 16, 2021Assignee: LG DISPLAY CO., LTD.Inventors: InTak Cho, JungSeok Seo, SeHee Park, Jaeyoon Park, SangYun Sung
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Publication number: 20210343855Abstract: A thin film transistor substrate can include a buffer layer on a base substrate and having a first buffer layer and a second buffer layer; a semiconductor layer disposed on the buffer layer; a gate insulating film on the semiconductor layer; and a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer. The base substrate, the first buffer layer, the second buffer layer, the semiconductor layer, the gate insulating film and the gate electrode are sequentially stacked, and a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.Type: ApplicationFiled: July 16, 2021Publication date: November 4, 2021Applicant: LG Display Co., Ltd.Inventors: SeHee PARK, InTak CHO, DaeHwan KIM, JuHeyuck BAECK, Jiyong NOH
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Patent number: 11094793Abstract: A thin film transistor substrate can include a first buffer layer disposed on a base substrate; a second buffer layer disposed on the first buffer layer; a semiconductor layer disposed on the second buffer layer; and a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer, in which a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.Type: GrantFiled: August 12, 2019Date of Patent: August 17, 2021Assignee: LG DISPLAY CO., LTD.Inventors: SeHee Park, InTak Cho, DaeHwan Kim, JuHeyuck Baeck, Jiyong Noh
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Patent number: 11069814Abstract: An electronic device can include a panel; a driver circuit configured to drive the panel; and a transistor disposed in the panel, the transistor including: a gate electrode disposed on a substrate, a first insulating film disposed on the gate electrode, an active layer disposed on the first insulating film, the active layer including: a first portion of the active layer overlapping with an upper surface of the gate electrode, a second portion of the active layer extending from the first portion, being disposed along a side surface of the gate electrode and including a channel area, and a third portion of the active layer extending from the second portion of the active layer, the third portion of the active layer being disposed on a portion of the first insulating film that does not overlap with the gate electrode, a second insulating film disposed on the active layer, a first electrode disposed on the second insulating film, the first electrode being electrically connected to the first portion of the active lType: GrantFiled: September 18, 2019Date of Patent: July 20, 2021Assignee: LG DISPLAY CO., LTD.Inventors: SangYun Sung, SeHee Park, Jiyong Noh, InTak Cho, PilSang Yun
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Publication number: 20210202755Abstract: Disclosed is a thin film transistor, a method for manufacturing the same and a display apparatus comprising the same, wherein the thin film transistor includes a first insulating layer on a substrate, an active layer on the first insulating layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer has a single crystal structure of an oxide semiconductor material, and an upper surface of the first insulating layer which contacts the active layer is an oxygen (O) layer made of oxygen (O).Type: ApplicationFiled: December 16, 2020Publication date: July 1, 2021Inventors: KyungChul OK, JungSeok SEO, PilSang YUN, Jiyong NOH, Jaeman JANG, InTak CHO
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Publication number: 20210202754Abstract: Disclosed are a thin film transistor, a display apparatus comprising the thin film transistor, and a method for manufacturing the thin film transistor. The thin film transistor comprises an active layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer includes a silicon semiconductor layer, and an oxide semiconductor layer which contacts the silicon semiconductor layer, wherein at least a portion of the silicon semiconductor layer and at least a portion of the oxide semiconductor layer are overlapped with the gate electrode.Type: ApplicationFiled: December 14, 2020Publication date: July 1, 2021Inventors: Jaeman JANG, PilSang YUN, Jiyong NOH, InTak CHO
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Publication number: 20210202760Abstract: A thin film transistor, a method for manufacturing the same and a display apparatus comprising the same are disclosed, in which the thin film transistor comprises a semiconductor formed on a substrate, a gate insulating film formed on the semiconductor, a gate electrode formed on the gate insulating film, a first insulating film formed on the substrate, a first conductor portion formed on the first insulating film and formed at one side of the semiconductor, and a second conductor portion formed on the first insulating film and formed at another side of the semiconductor, wherein a first portion of the first insulating film may be formed between the semiconductor and the first conductor portion, and a second portion of the first insulating film may be formed between the semiconductor and the second conductor portion.Type: ApplicationFiled: December 15, 2020Publication date: July 1, 2021Inventors: Jaeman JANG, JungSeok SEO, PilSang YUN, InTak CHO
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Publication number: 20210193804Abstract: A thin film transistor, a display panel comprising the same and a display apparatus are discussed. The thin film transistor comprises a buffer layer embodied on a substrate, a semiconductor layer embodied on the buffer layer, including a channel area, a first conductor portion and a second conductor portion, a gate insulating film embodied on the semiconductor layer, a gate electrode embodied on the gate insulating film, and an auxiliary electrode overlapped with the second conductor portion, wherein the first conductor portion is extended from one side of the channel area, and becomes a source area, and the second conductor portion is extended from the other side of the channel area, and becomes a drain area.Type: ApplicationFiled: December 22, 2020Publication date: June 24, 2021Applicant: LG Display Co., Ltd.Inventors: InTak CHO, Jiyong NOH, Jaeman JANG, PilSang YUN, Jeyong JEON