Patents by Inventor Inti Sodemann

Inti Sodemann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transistor that employs collective magnetic effects thereby providing improved energy efficiency
    Patent number: 9825218
    Abstract: A device or class of devices that provides a mechanism for controlling charge current flow in transistors that employs collective magnetic effects to overcome voltage limitations associated with single-particle thermionic emission as in conventional MOSFETs. Such a device may include two or more magnetic stacks with an easy-in-plane ferromagnetic film sandwiched between oppositely magnetically oriented perpendicular magnetization anisotropy (PMA) ferromagnets. Each stack includes two non-magnetic layers separating the easy-plane ferromagnetic film from the PMA layers. Charge current flow through one of these stacks controls the current-voltage negative differential resistance characteristics of the second stack through collective magnetic interactions. This can be exploited in a variety of digital logic gates consuming less energy than conventional CMOS integrated circuits.
    Type: Grant
    Filed: October 13, 2015
    Date of Patent: November 21, 2017
    Assignee: Board of Regents, The University of Texas System
    Inventors: Allan MacDonald, Leonard Franklin Register, II, Emanuel Tutuc, Inti Sodemann, Hua Chen, Xuehao Mou, Sanjay K. Banerjee
  • TRANSISTOR THAT EMPLOYS COLLECTIVE MAGNETIC EFFECTS THEREBY PROVIDING IMPROVED ENERGY EFFICIENCY
    Publication number: 20170104151
    Abstract: A device or class of devices that provides a mechanism for controlling charge current flow in transistors that employs collective magnetic effects to overcome voltage limitations associated with single-particle thermionic emission as in conventional MOSFETs. Such a device may include two or more magnetic stacks with an easy-in-plane ferromagnetic film sandwiched between oppositely magnetically oriented perpendicular magnetization anisotropy (PMA) ferromagnets. Each stack includes two non-magnetic layers separating the easy-plane ferromagnetic film from the PMA layers. Charge current flow through one of these stacks controls the current-voltage negative differential resistance characteristics of the second stack through collective magnetic interactions. This can be exploited in a variety of digital logic gates consuming less energy than conventional CMOS integrated circuits.
    Type: Application
    Filed: October 13, 2015
    Publication date: April 13, 2017
    Inventors: Sanjay K. Banerjee, Allan MacDonald, Leonard Franklin Register, II, Emanuel Tutuc, Inti Sodemann, Hua Chen, Xuehao Mou