Patents by Inventor Inu Jeon

Inu Jeon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240072149
    Abstract: A semiconductor device includes a substrate including an active region extending in a first direction, a gate electrode layer crossing the active region and extending in a second direction, a plurality of channel layers on the active region, spaced apart from each other in a third direction, perpendicular to an upper surface of the substrate, and disposed sequentially from the active region, and surrounded by the gate electrode layer, gate spacer layers disposed on side surfaces of the gate electrode layer in the first direction, and source/drain regions disposed on the active region, on sides of the gate electrode layer, and connected to the plurality of channel layers. An uppermost channel layer among the plurality of channel layers includes channel portions separated from each other in the first direction and disposed below the gate spacer layers.
    Type: Application
    Filed: May 10, 2023
    Publication date: February 29, 2024
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Younggwon KIM, Myunggil Kang, Dongwon Kim, Beomjin Park, Inu Jeon, Soojin Jeong