Abstract: A scroll compressor including a casing; a main frame including a receiving groove formed on an upper surface of the main frame; a fixed scroll on the upper surface of the main frame; an orbiting scroll arrangeable in the receiving groove of the main frame and engaging with the fixed scroll to form a compression chamber; an axially compliant frame arrangeable in the receiving groove of the main frame, the axially compliant frame being at a lower side of the orbiting scroll, moveable relative to the lower side of the orbiting scroll, and configured to divide the receiving groove into a first back pressure chamber and a second back pressure chamber; a drive shaft coupleable to a lower portion of the orbiting scroll and configured to rotate the orbiting scroll; and a drive motor arrangeable below the main frame and configured to rotate the drive shaft.

Abstract: Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a substrate; an insulator on an upper surface of the substrate; a transistor between the substrate and the insulator, the transistor comprising: channel layers that are spaced apart from each other in a first direction that is perpendicular to the upper surface of the substrate; and a gate structure on the channel layers and the insulator, wherein a width of the insulator in a second direction that is parallel with the upper surface of the substrate is equal or substantially equal to a width of an uppermost one of the channel layers in the second direction.

Abstract: Provided is a semiconductor device which includes: a 1st source/drain pattern at a 1st level; a 2nd source/drain pattern at a 2nd level vertically different from the 1st level; and a 1st contact structure on the 1st source/drain pattern, wherein a portion of the 1st source/drain pattern is in a 1st recess of the 1st contact structure.

Abstract: Provided is a scroll compressor including: a housing; a frame; a fixed scroll, an orbiting scroll including a boss portion; a shaft including an eccentric portion insertable into the boss and an oil passage; a bearing member couplable to the shaft, configured to rotate together with the shaft, and including a boss receiving groove in which the boss portion is insertable; a first bearing between the frame and the bearing member; and a second bearing between the boss portion and the eccentric portion, the second bearing configured to overlap at least partially with the first bearing in a radial direction of the first bearing, wherein the frame includes an oil discharge passage and based on the eccentric portion being inserted into the boss portion, the oil discharge passage is formed to pass through a portion of the frame such that oil is discharged.

Abstract: Provided is a semiconductor device which includes: an isolation structure; a 1st contact structure in the isolation structure; and a 2nd contact structure adjacent to and at a lateral side of the 1st contact structure, in the isolation structure, wherein at least one of the 1st contact structure and the 2nd contact structure has an extra isolation layer on a side surface thereof facing the other of the 1st contact structure and the 2nd contact structure.

Abstract: An integrated circuit device includes a stacked transistor structure on a substrate. The stacked transistor structure includes a first transistor and a second transistor stacked on the first transistor. Each of the first and second transistors includes a plurality of channel patterns that extend between source/drain regions in a first direction and are alternately stacked with gate patterns in a second direction. For at least one of the first and second transistors, respective lengths of the channel patterns, the gate patterns, and/or inner spacers at opposing ends of the gate patterns differ along the first direction. Related devices and fabrication methods are also discussed.

Abstract: A method of fabricating a semiconductor device includes forming capping patterns that are spaced apart from each other in a first direction at a first side of a semiconductor structure, and forming channel structures and source/drain regions therebetween that are spaced apart from each other in the first direction at a second side of the semiconductor structure that is opposite the first side of the semiconductor structure. The capping patterns overlap the channel structures in the second direction, respectively. The method further includes forming a backside contact structure that is electrically connected to at least one of the source/drain regions and is aligned to overlap the at least one of the source/drain regions in the second direction based on the capping patterns.

Abstract: A scroll compressor can include a frame including a shaft hole, a fixed scroll on an upper side of the frame, an orbiting scroll between the fixed scroll and the frame, a lower surface of the orbiting scroll including a boss inserted into the shaft hole, a rotatable shaft including an eccentric portion inserted into the boss and inserted into the shaft hole, a first bearing in the shaft hole between the shaft hole and a bearing support coupled to an outer circumferential surface of the rotating shaft, an inner circumferential surface of the first bearing being supported by an outer circumferential surface of the bearing support, the bearing support being separatable from, and couplable to, the rotating shaft, and a second bearing between the boss and the eccentric portion so that a location of the second bearing overlaps the first bearing in an axial direction of the rotatable shaft.

Abstract: A semiconductor device includes a substrate including a boundary region between first and second regions, first active patterns on the first region, second active patterns on the second region, and an isolation insulating pattern on the boundary region between the first and second active patterns. A width of at least some of the first active patterns have different widths. Widths of the second active patterns may be equal to each other. A bottom surface of the isolation insulating pattern includes a first bottom surface adjacent to a corresponding first active pattern, a second bottom surface adjacent to a corresponding second active pattern, and a third bottom surface between the first bottom surface and the second bottom surface. The third bottom surface is located at a different height from those of the first and second bottom surfaces with respect to a bottom surface of the substrate.

Abstract: A semiconductor device includes a substrate including a boundary region between first and second regions, first active patterns on the first region, second active patterns on the second region, and an isolation insulating pattern on the boundary region between the first and second active patterns. A width of at least some of the first active patterns have different widths. Widths of the second active patterns may be equal to each other. A bottom surface of the isolation insulating pattern includes a first bottom surface adjacent to a corresponding first active pattern, a second bottom surface adjacent to a corresponding second active pattern, and a third bottom surface between the first bottom surface and the second bottom surface. The third bottom surface is located at a different height from those of the first and second bottom surfaces with respect to a bottom surface of the substrate.

Abstract: A semiconductor device includes a substrate including a boundary region between first and second regions, first active patterns on the first region, second active patterns on the second region, and an isolation insulating pattern on the boundary region between the first and second active patterns. A width of at least some of the first active patterns have different widths. Widths of the second active patterns may be equal to each other. A bottom surface of the isolation insulating pattern includes a first bottom surface adjacent to a corresponding first active pattern, a second bottom surface adjacent to a corresponding second active pattern, and a third bottom surface between the first bottom surface and the second bottom surface. The third bottom surface is located at a different height from those of the first and second bottom surfaces with respect to a bottom surface of the substrate.

Abstract: The present disclosure relates to a method for quantitation of microcirculation in a subject, in which a functional capillary ratio is calculated from a plurality of motion images of target factors over time in a first blood stream passing through the capillaries of the subject, and to an apparatus for measuring microcirculation in a subject. The present disclosure also relates to a method for providing information on microcirculatory disorder in a subject, in which a dynamic element in target factors is analyzed from a plurality of motion images of the target factors over time in a second blood stream passing through the capillaries of the subject, and an apparatus for diagnosis of microcirculatory disorder in a subject.

Abstract: A semiconductor device includes a substrate including a boundary region between first and second regions, first active patterns on the first region, second active patterns on the second region, and an isolation insulating pattern on the boundary region between the first and second active patterns. A width of at least some of the first active patterns have different widths. Widths of the second active patterns may be equal to each other. A bottom surface of the isolation insulating pattern includes a first bottom surface adjacent to a corresponding first active pattern, a second bottom surface adjacent to a corresponding second active pattern, and a third bottom surface between the first bottom surface and the second bottom surface. The third bottom surface is located at a different height from those of the first and second bottom surfaces with respect to a bottom surface of the substrate.

Abstract: Disclosed are a window apparatus for obtaining a microscopic image of in vivo breast tissue and a method for using the window apparatus to obtain cell-level and molecular-level microscopic images of in vivo breast tissue while maintaining the biological environment of the in vivo breast tissue. In one embodiment, a window apparatus comprises a first chamber having a ring structure with an open window on the center, and a cover glass disposed on the upper part and breast tissue placed on the lower part; a second chamber having an opening window on the center coupled to the first chamber to support the breast tissue; and a chamber holder for fixing the first and second chambers having a tilting mount placing unit with the tilting mount placed to have the cover glass and an object lens of a confocal microscope system stay parallel to each other.

Abstract: Disclosed are a microaspiration-based lung window apparatus for obtaining a microscopic image of in vivo lung tissue and a method for using the window apparatus to obtain cell-level and molecular level microscopic images of in vivo lung tissue while maintaining physiological respiration and circulation of an animal without interference. In one embodiment, a lung window apparatus comprises an open window having the upper and lower parts open, a cover glass placed over the upper part and lung tissue coming in contact with the lower part; an aspiration tube extending from one side of the open window to an aspiration apparatus enabling the inside of the open window to be in a vacuum state; and a tilting mount placing unit extending from one side of the open window having a tilting mount to enable the cover glass and an object lens of a confocal microscope system to stay parallel to each other.

Abstract: A semiconductor device includes a fin structure which vertically protrudes from a substrate and extends in a first direction parallel to a top surface of the substrate. The fin structure includes a lower pattern and an active pattern vertically protruding from a top surface of the lower pattern. The top surface of the lower pattern includes a flat portion substantially parallel to the top surface of the substrate. The lower pattern includes a first sidewall extending in the first direction and a second sidewall extending in a second direction crossing the first direction. The first sidewall is inclined relative to the top surface of the substrate at a first angle greater than a second angle corresponding to the second sidewall that is inclined relative to the top surface of the substrate.

Abstract: Disclosed are a microaspiration-based lung window apparatus for obtaining a microscopic image of in vivo lung tissue and a method for using the window apparatus to obtain cell-level and molecular level microscopic images of in vivo lung tissue while maintaining physiological respiration and circulation of an animal without interference. In one embodiment, a lung window apparatus comprises an open window having the upper and lower parts open, a cover glass placed over the upper part and lung tissue coming in contact with the lower part; an aspiration tube extending from one side of the open window to an aspiration apparatus enabling the inside of the open window to be in a vacuum state; and a tilting mount placing unit extending from one side of the open window having a tilting mount to enable the cover glass and an object lens of a confocal microscope system to stay parallel to each other.

Abstract: Disclosed are a window apparatus for obtaining a microscopic image of in vivo breast tissue and a method for using the window apparatus to obtain cell-level and molecular-level microscopic images of in vivo breast tissue while maintaining the biological environment of the in vivo breast tissue. In one embodiment, a window apparatus comprises a first chamber having a ring structure with an open window on the center, and a cover glass disposed on the upper part and breast tissue placed on the lower part; a second chamber having an opening window on the center coupled to the first chamber to support the breast tissue; and a chamber holder for fixing the first and second chambers having a tilting mount placing unit with the tilting mount placed to have the cover glass and an object lens of a confocal microscope system stay parallel to each other.

Abstract: A semiconductor device includes a fin structure which vertically protrudes from a substrate and extends in a first direction parallel to a top surface of the substrate. The fin structure includes a lower pattern and an active pattern vertically protruding from a top surface of the lower pattern. The top surface of the lower pattern includes a flat portion substantially parallel to the top surface of the substrate. The lower pattern includes a first sidewall extending in the first direction and a second sidewall extending in a second direction crossing the first direction. The first sidewall is inclined relative to the top surface of the substrate at a first angle greater than a second angle corresponding to the second sidewall that is inclined relative to the top surface of the substrate.

Abstract: A scroll compressor is provided which is configured such that an arcuate section may be formed from a suction end of a wrap to a first point to increase a suction volume, and a logarithmic spiral section in which a wrap thickness increases may be formed from a second point to a discharge end of the wrap. This may increase a volume ratio of the compressor so as to increase a capacity of the compressor and prevent damage to the wrap due to a high compression ratio operation, thereby enhancing reliability of the compressor.