Patents by Inventor Ioan Mihai Miron

Ioan Mihai Miron has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10833249
    Abstract: A memory cell, including a stack of: a conductive layer of a conductive material including a first chemical element; an oxide layer sufficiently thin to allow the flowing of a current by tunnel effect; and a conductive ferromagnetic layer having a programmable magnetization and including a second chemical element, wherein the oxide layer includes the first and second chemical elements.
    Type: Grant
    Filed: September 18, 2017
    Date of Patent: November 10, 2020
    Assignees: Centre National de la Recherche Scientifique, Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventors: Gilles Gaudin, Ioan Mihai Miron, Alexandru Trifu
  • Patent number: 10622046
    Abstract: The invention relates to a magnetic memory cell (30), comprising: a stack (31) including a magnetic layer section (34) between a conductive layer section (32) and a section (36) of a layer that is different from the conductive layer, the magnetic layer having a magnetisation (35) perpendicular to the plane of the layers; a metallisation section (42) on which the stack is placed; and first, second, third and fourth metallisation arms (44D to 44G), each arm having a median axis (45D to 45G), wherein, for each arm, a current flowing towards the stack in the direction of the median axis sees that portion of the stack which is closest the arm mostly on its left for the first and second arms (44E, 44G), and mostly on its right for the third and fourth arms (44D, 44F).
    Type: Grant
    Filed: October 5, 2016
    Date of Patent: April 14, 2020
    Assignees: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, COMMISSARIATÁ L'ÉNERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Gilles Gaudin, Ioan Mihai Miron, Olivier Boulle, Safeer Chenattukuzhiyil
  • Patent number: 10381059
    Abstract: A magnetic memory element includes a contact with a magnetic layer portion between a conductive layer portion and a non-magnetic layer portion. The magnetic layer has a magnetization perpendicular to the plane of the layers, and an angled conductive track-having a central portion extended by two arms, the contact being entirely arranged on the track. For each arm, a current flowing towards the contact along the median axis of the arm encounters the portion of the contact nearest to the arm primarily on the left thereof for one of the arms, and primarily on the right thereof for the other arm.
    Type: Grant
    Filed: October 15, 2016
    Date of Patent: August 13, 2019
    Assignees: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Gilles Gaudin, Ioan Mihai Miron, Olivier Boulle, Safeer Chenattukuzhiyil
  • Publication number: 20190088853
    Abstract: A memory cell, including a stack of: a conductive layer of a conductive material including a first chemical element; an oxide layer sufficiently thin to allow the flowing of a current by tunnel effect; and a conductive ferromagnetic layer having a programmable magnetization and including a second chemical element, wherein the oxide layer includes the first and second chemical elements.
    Type: Application
    Filed: September 18, 2017
    Publication date: March 21, 2019
    Applicants: Centre National de la Recherche Scientifique, Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Gilles Gaudin, Ioan Mihai Miron, Alexandru Trifu
  • Patent number: 10224085
    Abstract: A memory slot including a pad formed of a stack of regions made of thin layers, including a first region made of a nonmagnetic conducting material; a second region made of a magnetic material exhibiting a magnetization in a direction perpendicular to the principal plane of the pad; a third region made of a nonmagnetic conducting material of different characteristics to those of the first region; the pad resting on a conducting track adapted to cause the flow of a programming current of chosen sense, in which the pad has an asymmetric shape with respect to any plane perpendicular to the plane of the layers and parallel to the central axis of the track, and with respect to its barycenter.
    Type: Grant
    Filed: January 13, 2016
    Date of Patent: March 5, 2019
    Assignees: Centre National de la Recherche Scientifique, Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventors: Gilles Gaudin, Ioan Mihai Miron, Olivier Boulle, Safeer Chenattukuz Hiyil, Jean-Pierre Nozieres
  • Publication number: 20180294023
    Abstract: The invention relates to a magnetic memory cell (30), comprising: a stack (31) including a magnetic layer section (34) between a conductive layer section (32) and a section (36) of a layer that is different from the conductive layer, the magnetic layer having a magnetisation (35) perpendicular to the plane of the layers; a metallisation section (42) on which the stack is placed; and first, second, third and fourth metallisation arms (44D to 44G), each arm having a median axis (45D to 45G), wherein, for each arm, a current flowing towards the stack in the direction of the median axis sees that portion of the stack which is closest the arm mostly on its left for the first and second arms (44E, 44G), and mostly on its right for the third and fourth arms (44D, 44F).
    Type: Application
    Filed: October 5, 2016
    Publication date: October 11, 2018
    Inventors: Gilles GAUDIN, Ioan Mihai MIRON, Olivier BOULLE, Safeer CHENATTUKUZHIYIL
  • Publication number: 20180005677
    Abstract: A memory slot including a pad formed of a stack of regions made of thin layers, including a first region made of a nonmagnetic conducting material; a second region made of a magnetic material exhibiting a magnetization in a direction perpendicular to the principal plane of the pad; a third region made of a nonmagnetic conducting material of different characteristics to those of the first region; the pad resting on a conducting track adapted to cause the flow of a programming current of chosen sense, in which the pad has an asymmetric shape with respect to any plane perpendicular to the plane of the layers and parallel to the central axis of the track, and with respect to its barycenter.
    Type: Application
    Filed: January 13, 2016
    Publication date: January 4, 2018
    Applicants: Centre National de la Recherche Scientifique, Commissariat à I'Énergie Atomique et aux Énergies Alternatives
    Inventors: Gilles Gaudin, Ioan Mihai Miron, Olivier Boulle, Safeer Chenattukuz Hiyil, Jean-Pierre Nozieres
  • Patent number: 8416618
    Abstract: The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting a direction of magnetization that is parallel or perpendicular to the plane of the central layer, said central layer being sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, wherein it includes a device for causing current to flow through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer, and a device for applying a magnetic field having a component along a magnetic field direction that is either parallel or perpendicular to the plane of the central layer and the curr
    Type: Grant
    Filed: October 6, 2010
    Date of Patent: April 9, 2013
    Assignees: Centre National de la Recherche Scientifique, Commissariat a l'Energie Atomique et aux Energies Alternatives, Universite Joseph Fourier, Institut Catala de Nanotechnologia (ICN), Institucio Catalana de Recerca I Estudis Avancats (ICREA)
    Inventors: Gilles Gaudin, Ioan Mihai Miron, Pietro Gambardella, Alain Schuhl
  • Patent number: 8384171
    Abstract: The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting magnetization having a magnetization direction that is parallel to the plane of the central layer, which layer is sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, and wherein it includes a device to cause a write current to pass through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer at an angle ? lying in the range 90°±60°, in particular 90°±30°, and more particularly 90°±15° relative to said magnetization direction in order to generate an effective magnetic fiel
    Type: Grant
    Filed: December 3, 2010
    Date of Patent: February 26, 2013
    Assignees: Centre National de la Recherche Scientifique, Commissariat a l'Energie Atomique Et Aux Energies Alternatives, Universite Joseph Fourier, Institut Catala de Nanotechnologia (ICN), Institucio Catalana de Recerca I Estudis Avancats (ICREA)
    Inventors: Gilles Gaudin, Ioan Mihai Miron, Pietro Gambardella, Alain Schuhl
  • Patent number: 8350347
    Abstract: The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting a direction of magnetization that is perpendicular to the plane of the central layer, said central layer being sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, and wherein it includes a device for causing current to flow through the second outer layer in a current flow direction parallel to the plane of the central layer, and a device for applying a magnetic field along a magnetic field direction that is perpendicular to the plane of the central layer.
    Type: Grant
    Filed: October 6, 2010
    Date of Patent: January 8, 2013
    Assignees: Centre National de la Recherche Scientifique, Commissariat a l'Energie Atomique et aux Energies Alternatives, Universite Joseph Fourier, Institut Catala de Nanotechnologia, Institucio Catalana de Recerca I Estudis Avancats (ICREA)
    Inventors: Gilles Gaudin, Ioan Mihai Miron, Pietro Gambardella, Alain Schuhl
  • Publication number: 20120098077
    Abstract: The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting magnetization having a magnetization direction that is parallel to the plane of the central layer, which layer is sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, and wherein it includes a device to cause a write current to pass through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer at an angle ? lying in the range 90°±60°, in particular 90°±30°, and more particularly 90°±15° relative to said magnetization direction in order to generate an effective magnetic fiel
    Type: Application
    Filed: December 3, 2010
    Publication date: April 26, 2012
    Inventors: Gilles Gaudin, Ioan Mihai Miron, Pietro Gambardella, Alain Schuhl
  • Publication number: 20120018822
    Abstract: The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting a direction of magnetization that is perpendicular to the plane of the central layer, said central layer being sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, and wherein it includes a device for causing current to flow through the second outer layer in a current flow direction parallel to the plane of the central layer, and a device for applying a magnetic field along a magnetic field direction that is perpendicular to the plane of the central layer.
    Type: Application
    Filed: October 6, 2010
    Publication date: January 26, 2012
    Inventors: Gilles Gaudin, Ioan Mihai Miron, Pietro Gambardella, Alain Schuhl
  • Publication number: 20120020152
    Abstract: The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting a direction of magnetization that is parallel or perpendicular to the plane of the central layer, said central layer being sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, wherein it includes a device for causing current to flow through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer, and a device for applying a magnetic field having a component along a magnetic field direction that is either parallel or perpendicular to the plane of the central layer and the curr
    Type: Application
    Filed: October 6, 2010
    Publication date: January 26, 2012
    Inventors: Gilles Gaudin, Ioan Mihai Miron, Pietro Gambardella, Alain Schuhl
  • Patent number: 8036070
    Abstract: A magnetic recording device comprising at least one unstructured recording support exhibiting at least one elementary magnetic layer, the recording support having a magnetization perpendicular to the plane of the support characterized in that it comprises magnetic elements having a magnetization perpendicular to the plane of the support and a greater inversion field than the inversion field of the recording support, and which are separated from the recording support by a decoupling layer made of a nonmagnetic material so that the magnetic elements produce a dipolar field in the recording support. The magnetic elements are spaced apart from one another by nonmagnetic regions, each magnetic element defining during a write operation a memory point in the recording support.
    Type: Grant
    Filed: November 10, 2008
    Date of Patent: October 11, 2011
    Assignee: Centre National de la Recherche Scientifique
    Inventors: Gilles Louis Gaudin, Pierre-Jean Zermatten, Ioan Mihai Miron, Alain Schuhl
  • Publication number: 20090122658
    Abstract: A magnetic recording device comprising at least one unstructured recording support exhibiting at least one elementary magnetic layer, the recording support having a magnetization perpendicular to the plane of the support characterized in that it comprises magnetic elements having a magnetization perpendicular to the plane of the support and a greater inversion field than the inversion field of the recording support, and which are separated from the recording support by a decoupling layer made of a nonmagnetic material so that the magnetic elements produce a dipolar field in the recording support. The magnetic elements are spaced apart from one another by nonmagnetic regions, each magnetic element defining during a write operation a memory point in the recording support.
    Type: Application
    Filed: November 10, 2008
    Publication date: May 14, 2009
    Inventors: Gilles Louis Gaudin, Pierre-Jean Zermatten, Ioan Mihai Miron, Alain Schuhl