Patents by Inventor Ioan Mihai Miron
Ioan Mihai Miron has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10833249Abstract: A memory cell, including a stack of: a conductive layer of a conductive material including a first chemical element; an oxide layer sufficiently thin to allow the flowing of a current by tunnel effect; and a conductive ferromagnetic layer having a programmable magnetization and including a second chemical element, wherein the oxide layer includes the first and second chemical elements.Type: GrantFiled: September 18, 2017Date of Patent: November 10, 2020Assignees: Centre National de la Recherche Scientifique, Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gilles Gaudin, Ioan Mihai Miron, Alexandru Trifu
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Patent number: 10622046Abstract: The invention relates to a magnetic memory cell (30), comprising: a stack (31) including a magnetic layer section (34) between a conductive layer section (32) and a section (36) of a layer that is different from the conductive layer, the magnetic layer having a magnetisation (35) perpendicular to the plane of the layers; a metallisation section (42) on which the stack is placed; and first, second, third and fourth metallisation arms (44D to 44G), each arm having a median axis (45D to 45G), wherein, for each arm, a current flowing towards the stack in the direction of the median axis sees that portion of the stack which is closest the arm mostly on its left for the first and second arms (44E, 44G), and mostly on its right for the third and fourth arms (44D, 44F).Type: GrantFiled: October 5, 2016Date of Patent: April 14, 2020Assignees: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, COMMISSARIATÁ L'ÉNERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Gilles Gaudin, Ioan Mihai Miron, Olivier Boulle, Safeer Chenattukuzhiyil
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Patent number: 10381059Abstract: A magnetic memory element includes a contact with a magnetic layer portion between a conductive layer portion and a non-magnetic layer portion. The magnetic layer has a magnetization perpendicular to the plane of the layers, and an angled conductive track-having a central portion extended by two arms, the contact being entirely arranged on the track. For each arm, a current flowing towards the contact along the median axis of the arm encounters the portion of the contact nearest to the arm primarily on the left thereof for one of the arms, and primarily on the right thereof for the other arm.Type: GrantFiled: October 15, 2016Date of Patent: August 13, 2019Assignees: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Gilles Gaudin, Ioan Mihai Miron, Olivier Boulle, Safeer Chenattukuzhiyil
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Publication number: 20190088853Abstract: A memory cell, including a stack of: a conductive layer of a conductive material including a first chemical element; an oxide layer sufficiently thin to allow the flowing of a current by tunnel effect; and a conductive ferromagnetic layer having a programmable magnetization and including a second chemical element, wherein the oxide layer includes the first and second chemical elements.Type: ApplicationFiled: September 18, 2017Publication date: March 21, 2019Applicants: Centre National de la Recherche Scientifique, Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Gilles Gaudin, Ioan Mihai Miron, Alexandru Trifu
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Patent number: 10224085Abstract: A memory slot including a pad formed of a stack of regions made of thin layers, including a first region made of a nonmagnetic conducting material; a second region made of a magnetic material exhibiting a magnetization in a direction perpendicular to the principal plane of the pad; a third region made of a nonmagnetic conducting material of different characteristics to those of the first region; the pad resting on a conducting track adapted to cause the flow of a programming current of chosen sense, in which the pad has an asymmetric shape with respect to any plane perpendicular to the plane of the layers and parallel to the central axis of the track, and with respect to its barycenter.Type: GrantFiled: January 13, 2016Date of Patent: March 5, 2019Assignees: Centre National de la Recherche Scientifique, Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gilles Gaudin, Ioan Mihai Miron, Olivier Boulle, Safeer Chenattukuz Hiyil, Jean-Pierre Nozieres
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Publication number: 20180294023Abstract: The invention relates to a magnetic memory cell (30), comprising: a stack (31) including a magnetic layer section (34) between a conductive layer section (32) and a section (36) of a layer that is different from the conductive layer, the magnetic layer having a magnetisation (35) perpendicular to the plane of the layers; a metallisation section (42) on which the stack is placed; and first, second, third and fourth metallisation arms (44D to 44G), each arm having a median axis (45D to 45G), wherein, for each arm, a current flowing towards the stack in the direction of the median axis sees that portion of the stack which is closest the arm mostly on its left for the first and second arms (44E, 44G), and mostly on its right for the third and fourth arms (44D, 44F).Type: ApplicationFiled: October 5, 2016Publication date: October 11, 2018Inventors: Gilles GAUDIN, Ioan Mihai MIRON, Olivier BOULLE, Safeer CHENATTUKUZHIYIL
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Publication number: 20180005677Abstract: A memory slot including a pad formed of a stack of regions made of thin layers, including a first region made of a nonmagnetic conducting material; a second region made of a magnetic material exhibiting a magnetization in a direction perpendicular to the principal plane of the pad; a third region made of a nonmagnetic conducting material of different characteristics to those of the first region; the pad resting on a conducting track adapted to cause the flow of a programming current of chosen sense, in which the pad has an asymmetric shape with respect to any plane perpendicular to the plane of the layers and parallel to the central axis of the track, and with respect to its barycenter.Type: ApplicationFiled: January 13, 2016Publication date: January 4, 2018Applicants: Centre National de la Recherche Scientifique, Commissariat à I'Énergie Atomique et aux Énergies AlternativesInventors: Gilles Gaudin, Ioan Mihai Miron, Olivier Boulle, Safeer Chenattukuz Hiyil, Jean-Pierre Nozieres
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Patent number: 8416618Abstract: The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting a direction of magnetization that is parallel or perpendicular to the plane of the central layer, said central layer being sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, wherein it includes a device for causing current to flow through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer, and a device for applying a magnetic field having a component along a magnetic field direction that is either parallel or perpendicular to the plane of the central layer and the currType: GrantFiled: October 6, 2010Date of Patent: April 9, 2013Assignees: Centre National de la Recherche Scientifique, Commissariat a l'Energie Atomique et aux Energies Alternatives, Universite Joseph Fourier, Institut Catala de Nanotechnologia (ICN), Institucio Catalana de Recerca I Estudis Avancats (ICREA)Inventors: Gilles Gaudin, Ioan Mihai Miron, Pietro Gambardella, Alain Schuhl
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Patent number: 8384171Abstract: The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting magnetization having a magnetization direction that is parallel to the plane of the central layer, which layer is sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, and wherein it includes a device to cause a write current to pass through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer at an angle ? lying in the range 90°±60°, in particular 90°±30°, and more particularly 90°±15° relative to said magnetization direction in order to generate an effective magnetic fielType: GrantFiled: December 3, 2010Date of Patent: February 26, 2013Assignees: Centre National de la Recherche Scientifique, Commissariat a l'Energie Atomique Et Aux Energies Alternatives, Universite Joseph Fourier, Institut Catala de Nanotechnologia (ICN), Institucio Catalana de Recerca I Estudis Avancats (ICREA)Inventors: Gilles Gaudin, Ioan Mihai Miron, Pietro Gambardella, Alain Schuhl
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Patent number: 8350347Abstract: The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting a direction of magnetization that is perpendicular to the plane of the central layer, said central layer being sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, and wherein it includes a device for causing current to flow through the second outer layer in a current flow direction parallel to the plane of the central layer, and a device for applying a magnetic field along a magnetic field direction that is perpendicular to the plane of the central layer.Type: GrantFiled: October 6, 2010Date of Patent: January 8, 2013Assignees: Centre National de la Recherche Scientifique, Commissariat a l'Energie Atomique et aux Energies Alternatives, Universite Joseph Fourier, Institut Catala de Nanotechnologia, Institucio Catalana de Recerca I Estudis Avancats (ICREA)Inventors: Gilles Gaudin, Ioan Mihai Miron, Pietro Gambardella, Alain Schuhl
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Publication number: 20120098077Abstract: The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting magnetization having a magnetization direction that is parallel to the plane of the central layer, which layer is sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, and wherein it includes a device to cause a write current to pass through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer at an angle ? lying in the range 90°±60°, in particular 90°±30°, and more particularly 90°±15° relative to said magnetization direction in order to generate an effective magnetic fielType: ApplicationFiled: December 3, 2010Publication date: April 26, 2012Inventors: Gilles Gaudin, Ioan Mihai Miron, Pietro Gambardella, Alain Schuhl
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Publication number: 20120018822Abstract: The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting a direction of magnetization that is perpendicular to the plane of the central layer, said central layer being sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, and wherein it includes a device for causing current to flow through the second outer layer in a current flow direction parallel to the plane of the central layer, and a device for applying a magnetic field along a magnetic field direction that is perpendicular to the plane of the central layer.Type: ApplicationFiled: October 6, 2010Publication date: January 26, 2012Inventors: Gilles Gaudin, Ioan Mihai Miron, Pietro Gambardella, Alain Schuhl
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Publication number: 20120020152Abstract: The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting a direction of magnetization that is parallel or perpendicular to the plane of the central layer, said central layer being sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, wherein it includes a device for causing current to flow through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer, and a device for applying a magnetic field having a component along a magnetic field direction that is either parallel or perpendicular to the plane of the central layer and the currType: ApplicationFiled: October 6, 2010Publication date: January 26, 2012Inventors: Gilles Gaudin, Ioan Mihai Miron, Pietro Gambardella, Alain Schuhl
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Patent number: 8036070Abstract: A magnetic recording device comprising at least one unstructured recording support exhibiting at least one elementary magnetic layer, the recording support having a magnetization perpendicular to the plane of the support characterized in that it comprises magnetic elements having a magnetization perpendicular to the plane of the support and a greater inversion field than the inversion field of the recording support, and which are separated from the recording support by a decoupling layer made of a nonmagnetic material so that the magnetic elements produce a dipolar field in the recording support. The magnetic elements are spaced apart from one another by nonmagnetic regions, each magnetic element defining during a write operation a memory point in the recording support.Type: GrantFiled: November 10, 2008Date of Patent: October 11, 2011Assignee: Centre National de la Recherche ScientifiqueInventors: Gilles Louis Gaudin, Pierre-Jean Zermatten, Ioan Mihai Miron, Alain Schuhl
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Publication number: 20090122658Abstract: A magnetic recording device comprising at least one unstructured recording support exhibiting at least one elementary magnetic layer, the recording support having a magnetization perpendicular to the plane of the support characterized in that it comprises magnetic elements having a magnetization perpendicular to the plane of the support and a greater inversion field than the inversion field of the recording support, and which are separated from the recording support by a decoupling layer made of a nonmagnetic material so that the magnetic elements produce a dipolar field in the recording support. The magnetic elements are spaced apart from one another by nonmagnetic regions, each magnetic element defining during a write operation a memory point in the recording support.Type: ApplicationFiled: November 10, 2008Publication date: May 14, 2009Inventors: Gilles Louis Gaudin, Pierre-Jean Zermatten, Ioan Mihai Miron, Alain Schuhl