Abstract: A fixed abrasive three-dimensional plate includes micron size diamond beads or a mixture of abrasive particles and metal oxide beads, ranging in size from a few microns to a few tens of microns, incorporated into a matrix of one or more inorganic binders and fillers. The composition is formed into a rigid plate blank, and the abrasive plate is mounted on a substrate forming a lapping/polishing plate. The abrasive plate is capable of delivering high material removal rates coupled with reduced surface roughness when lapping/polishing advanced materials, including sapphire, titanium carbide reinforced alumina, silicon carbide, gallium nitride, aluminum nitride, zinc selenide, and other compound semiconductor materials, as well as, glass, ceramic, metallic, and composite workpieces. The diamond beads incorporated in the fixed abrasive three-dimensional plate include diamond particles ranging in size from a few nanometers to a few tens of microns, bonded with one or more inorganic binders and additives.

Abstract: A fixed abrasive three-dimensional plate includes micron size diamond beads or a mixture of abrasive particles and metal oxide beads, ranging in size from a few microns to a few tens of microns, incorporated into a matrix of one or more inorganic binders and fillers. The composition is formed into a rigid plate blank, and the abrasive plate is mounted on a substrate forming a lapping/polishing plate. The abrasive plate is capable of delivering high material removal rates coupled with reduced surface roughness when lapping/polishing advanced materials, including sapphire, titanium carbide reinforced alumina, silicon carbide, gallium nitride, aluminum nitride, zinc selenide, and other compound semiconductor materials, as well as, glass, ceramic, metallic, and composite workpieces. The diamond beads incorporated in the fixed abrasive three-dimensional plate include diamond particles ranging in size from a few nanometers to a few tens of microns, bonded with one or more inorganic binders and additives.

Abstract: A method is provided of etching a diamond particle including the step of heating the particle at a temperature of about 700° C. or greater in the presence of water vapor to form an etched particle. Also provided is an etched particle having a core and a surface. The core is formed of sp3 hybridized carbon atoms covalently bonded together, and the surface has substantially no chlorine atoms, oxygen atoms or oxygen species.

Abstract: A method is provided of etching a diamond particle including the step of heating the particle at a temperature of about 700° C. or greater in the presence of water vapor to form an etched particle. Also provided is an etched particle having a core and a surface. The core is formed of sp3 hybridized carbon atoms covalently bonded together, and the surface has substantially no chlorine atoms, oxygen atoms or oxygen species.