Patents by Inventor Ippei HATSUDA

Ippei HATSUDA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11005444
    Abstract: An acoustic wave device includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a support provided on the piezoelectric substrate so as to surround the IDT electrode, and a cover provided on the support. The support has a larger thermal expansion coefficient than the piezoelectric substrate. The IDT electrode is provided in a hollow space that is surrounded by the piezoelectric substrate, the support, and the cover. The support includes an inner surface on a side of the hollow space, and an outer surface on a side opposite to the inner surface, and the support includes a recess provided in at least one of the inner and outer surfaces.
    Type: Grant
    Filed: June 6, 2019
    Date of Patent: May 11, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Ippei Hatsuda
  • Patent number: 10447240
    Abstract: An elastic wave device includes IDT electrodes stacked on a piezoelectric thin film. The IDT electrode includes a plurality of first electrode fingers and a plurality of second electrode fingers. A line connecting the distal ends of the first electrode fingers or the distal ends of the second electrode fingers extends obliquely with respect to a propagation direction of an elastic wave at an oblique angle ?. The oblique angle ? is about 0.4° or more and about 10° or less.
    Type: Grant
    Filed: June 20, 2016
    Date of Patent: October 15, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Takashi Yamane, Hideki Iwamoto, Keiji Okada, Syunsuke Kido, Masanori Otagawa, Ippei Hatsuda, Korekiyo Ito
  • Publication number: 20190288665
    Abstract: An acoustic wave device includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a support provided on the piezoelectric substrate so as to surround the IDT electrode, and a cover provided on the support. The support has a larger thermal expansion coefficient than the piezoelectric substrate. The IDT electrode is provided in a hollow space that is surrounded by the piezoelectric substrate, the support, and the cover. The support includes an inner surface on a side of the hollow space, and an outer surface on a side opposite to the inner surface, and the support includes a recess provided in at least one of the inner and outer surfaces.
    Type: Application
    Filed: June 6, 2019
    Publication date: September 19, 2019
    Inventor: Ippei HATSUDA
  • Publication number: 20160294361
    Abstract: An elastic wave device includes IDT electrodes stacked on a piezoelectric thin film. The IDT electrode includes a plurality of first electrode fingers and a plurality of second electrode fingers. A line connecting the distal ends of the first electrode fingers or the distal ends of the second electrode fingers extends obliquely with respect to a propagation direction of an elastic wave at an oblique angle ?. The oblique angle ? is about 0.4° or more and about 10° or less.
    Type: Application
    Filed: June 20, 2016
    Publication date: October 6, 2016
    Inventors: Takashi YAMANE, Hideki IWAMOTO, Keiji OKADA, Syunsuke KIDO, Masanori OTAGAWA, Ippei HATSUDA, Korekiyo ITO
  • Patent number: 8572825
    Abstract: A method for producing a piezoelectric composite substrate with satisfactory productivity controls the inclination of the crystal axis and the polar axis of a single-crystal thin film and prevents an adverse effect due to pyroelectricity in a production process. The method for producing a piezoelectric composite substrate provided with a plurality of piezoelectric materials includes an ion-implantation step, a bonding step, and a separation step. In the ion-implantation step, H+ ions are implanted into a piezoelectric single crystal material. In the bonding step, the piezoelectric single crystal material is bonded to a piezoelectric single crystal material. At this time, the polarity of the polar surface of the piezoelectric single crystal material is opposite to the polarity of the polar surface of the piezoelectric single crystal material, the polar surfaces being bonded to each other.
    Type: Grant
    Filed: May 19, 2011
    Date of Patent: November 5, 2013
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Norihiro Hayakawa, Hajime Kando, Ippei Hatsuda
  • Publication number: 20110220275
    Abstract: A method for producing a piezoelectric composite substrate with satisfactory productivity controls the inclination of the crystal axis and the polar axis of a single-crystal thin film and prevents an adverse effect due to pyroelectricity in a production process. The method for producing a piezoelectric composite substrate provided with a plurality of piezoelectric materials includes an ion-implantation step, a bonding step, and a separation step. In the ion-implantation step, H+ ions are implanted into a piezoelectric single crystal material. In the bonding step, the piezoelectric single crystal material is bonded to a piezoelectric single crystal material. At this time, the polarity of the polar surface of the piezoelectric single crystal material is opposite to the polarity of the polar surface of the piezoelectric single crystal material, the polar surfaces being bonded to each other.
    Type: Application
    Filed: May 19, 2011
    Publication date: September 15, 2011
    Applicant: MURATA MANUFACTURING CO., LTD.
    Inventors: Norihiro HAYAKAWA, Hajime KANDO, Ippei HATSUDA