Abstract: A gas flow metrology system for a substrate processing system includes N primary valves selectively flowing gas from N gas sources, respectively, where N is an integer. N mass flow controllers are connected to the N primary valves, respectively, to flow N gases from the N gas sources, respectively. N secondary valves selectively flow gas from the N mass flow controllers, respectively. A gas flow path connects the N secondary valves to a flow metrology system located remote from the N secondary valves, wherein the gas flow path includes a plurality of gas lines. A controller is configured to perform a hybrid flow metrology by selectively using a first flow metrology and a second flow metrology that is different from the first flow metrology to determine an actual flow rate for a selected gas at a desired flow rate from one of the N mass flow controllers.

Abstract: A gas flow metrology system for a substrate processing system includes N primary valves selectively flowing gas from N gas sources, respectively, where N is an integer. N mass flow controllers are connected to the N primary valves, respectively, to flow N gases from the N gas sources, respectively. N secondary valves selectively flow gas from the N mass flow controllers, respectively. A gas flow path connects the N secondary valves to a flow metrology system located remote from the N secondary valves, wherein the gas flow path includes a plurality of gas lines. A controller is configured to perform a hybrid flow metrology by selectively using a first flow metrology and a second flow metrology that is different from the first flow metrology to determine an actual flow rate for a selected gas at a desired flow rate from one of the N mass flow controllers.

Abstract: A gas supply delivery arrangement of a plasma processing system for processing a substrate with gases introduced through at least first, second, and third gas injection zones comprises process gas supply inlets and tuning gas inlets. A mixing manifold comprises gas sticks in fluid communication with a process gas supply and tuning gas sticks in fluid communication with a tuning gas supply. A first gas outlet delivers gas to the first gas injection zone, a second gas outlet delivers gas to the second gas injection zone, and a third gas outlet delivers gas to the third gas injection zone. A gas splitter is in fluid communication with the mixing manifold, and includes a first valve arrangement which splits mixed gas exiting the mixing manifold into a first mixed gas supplied to the first gas outlet and a second mixed gas supplied to the second, and/or third gas outlets.

Abstract: A gas delivery apparatus for supplying process gas to a processing chamber of a plasma processing apparatus includes a mixing manifold having a plurality of gas inlets on a surface thereof, the gas inlets being equally spaced from a center mixing point of the mixing manifold; and optionally a plurality of gas supplies in communication with the plurality of gas inlets on the surface of the mixing manifold. A method of supplying gas to a processing chamber of a plasma processing apparatus using such a gas delivery apparatus involves providing a plurality of gas supplies in communication with a plurality of gas inlets on a surface of a mixing manifold; flowing at least two different gases from the plurality of gas supplies to the mixing manifold to create a first mixed gas; and supplying the first mixed gas to a plasma processing chamber coupled downstream of the mixing manifold.

Abstract: Methods and apparatus for supplying gas in a plasma processing system that employs the single line drop approach wherein a regulator is shared among multiple mass flow controllers. In one or more embodiments, an accumulator is provided and coupled in gaseous communication with a shared manifold to reduce pressure spikes and dips. A filter, which may be replaceable or non-replaceable separate from the accumulator, is integrated with the accumulator in one or more embodiments.

Abstract: A method of calculating a transient flow rate of a flowed process gas comprises flowing process gas through a mass flow controller into a chamber of known volume and measuring successive data sample points which include pressure data, temperature data, and a time value for each successive data sample point. Groups of successive data sample points are identified wherein each group shares one or more successive data sample points with another group, and ratio values are calculated for each of the successive data sample points wherein each ratio value is a ratio between the pressure data and a product of temperature and gas compressibility data for each respective time value.

Abstract: A gas supply system for providing a plurality of process gases to a process chamber includes a plurality of mass flow controllers each arranged to receive a respective subset of the plurality of process gases. Each of the respective subsets includes more than one of the process gases, and at least one of the process gases is provided to more than one of the plurality of mass flow controllers. Respective valves are arranged upstream of each of the plurality of mass flow controllers to selectively provide the respective subsets to the mass flow controllers. A first quantity of the plurality of mass flow controllers is less than a total number of the plurality of process gases to be supplied to the process chamber. The first quantity is equal to a maximum number of the plurality of process gases to be used in the process chamber at any one time.

Abstract: A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.

Abstract: A corrosion sensor retainer assembly and method for predicting and detecting corrosion within a gas delivery system of a semiconductor substrate processing apparatus. The corrosion sensor retainer assembly comprises a laminate that includes a first insulating layer with a first port and a second insulating layer with a second port, wherein the first port and the second port are configured to retain a seal. The corrosion sensor retainer assembly includes a conductor housed within the laminate. The conductor forms a path that extends around the first port and the second port. At least a portion of the conductor has an exposed surface with a property that changes in the presence of corrosive gas or acid.

Abstract: A method of making a monolithic ceramic component of a gas delivery system of a semiconductor substrate processing apparatus wherein the gas delivery system is configured to supply process gas to a gas distribution member disposed downstream thereof. The gas distribution member is configured to supply the process gas to a processing region of a vacuum chamber of the apparatus, wherein the processing region is disposed above an upper surface of a semiconductor substrate to be processed. The method comprises preparing a green compact of ceramic material. The green compact of ceramic material is formed into a form of a desired monolithic ceramic component of the gas delivery system. The formed green compact of ceramic material is fired to form the monolithic ceramic component of the gas delivery system.

Abstract: A multi-line mass flow device configured for controlled delivery of two or more fluids into a process chamber. The multi-line mass flow device comprises a cluster mass flow control manifold and a multi-inlet manifold. The cluster mass flow control manifold comprises a controller, a gas manifold mounting block, and two or more gas flow control stations. The multi-inlet manifold comprises a multi-inlet mounting block, and two or more isolation valves mounted on the multi-inlet mounting block.

Abstract: A gas supply delivery arrangement of a plasma processing system for processing a substrate with gases introduced through at least first, second, and third gas injection zones comprises process gas supply inlets and tuning gas inlets. A mixing manifold comprises gas sticks in fluid communication with a process gas supply and tuning gas sticks in fluid communication with a tuning gas supply. A first gas outlet delivers gas to the first gas injection zone, a second gas outlet delivers gas to the second gas injection zone, and a third gas outlet delivers gas to the third gas injection zone. A gas splitter is in fluid communication with the mixing manifold, and includes a first valve arrangement which splits mixed gas exiting the mixing manifold into a first mixed gas supplied to the first gas outlet and a second mixed gas supplied to the second, and/or third gas outlets.

Abstract: A corrosion sensor retainer assembly and method for predicting and detecting corrosion within a gas delivery system of a semiconductor substrate processing apparatus. The corrosion sensor retainer assembly comprises a laminate that includes a first insulating layer with a first port and a second insulating layer with a second port, wherein the first port and the second port are configured to retain a seal. The corrosion sensor retainer assembly includes a conductor housed within the laminate. The conductor forms a path that extends around the first port and the second port. At least a portion of the conductor has an exposed surface with a property that changes in the presence of corrosive gas or acid.

Abstract: A method and apparatus is provided for decreasing the scrubber exhaust from gas panels, lower the cost of operation, lower the facilitation cost and power consumption by increasing the air velocity in areas of high potential risk of ignition. The apparatus includes a supply of compressed dry air (CDA) through the tubing with individual dispersion nozzles. The CDA dispersion nozzles can be installed at various key locations in order to provide additional ventilation turbulence and reduce potential dead zones inside the gas panel. Aspects of the invention help to save the energy and protect the environment by reducing the power consumption. In addition human safety shall be improved by minimizing the potential risk of ignition.

Abstract: A gas supply system for providing a plurality of process gases to a process chamber includes a plurality of mass flow controllers each arranged to receive a respective subset of the plurality of process gases. Each of the respective subsets includes more than one of the process gases, and at least one of the process gases is provided to more than one of the plurality of mass flow controllers. Respective valves are arranged upstream of each of the plurality of mass flow controllers to selectively provide the respective subsets to the mass flow controllers. A first quantity of the plurality of mass flow controllers is less than a total number of the plurality of process gases to be supplied to the process chamber. The first quantity is equal to a maximum number of the plurality of process gases to be used in the process chamber at any one time.

Abstract: A gas delivery apparatus for supplying process gas to a processing chamber of a plasma processing apparatus includes a mixing manifold having a plurality of gas inlets on a surface thereof, the gas inlets being equally spaced from a center mixing point of the mixing manifold; and optionally a plurality of gas supplies in communication with the plurality of gas inlets on the surface of the mixing manifold. A method of supplying gas to a processing chamber of a plasma processing apparatus using such a gas delivery apparatus involves providing a plurality of gas supplies in communication with a plurality of gas inlets on a surface of a mixing manifold; flowing at least two different gases from the plurality of gas supplies to the mixing manifold to create a first mixed gas; and supplying the first mixed gas to a plasma processing chamber coupled downstream of the mixing manifold.

Abstract: A method of making a monolithic ceramic component of a gas delivery system of a semiconductor substrate processing apparatus wherein the gas delivery system is configured to supply process gas to a gas distribution member disposed downstream thereof. The gas distribution member is configured to supply the process gas to a processing region of a vacuum chamber of the apparatus, wherein the processing region is disposed above an upper surface of a semiconductor substrate to be processed. The method comprises preparing a green compact of ceramic material. The green compact of ceramic material is formed into a form of a desired monolithic ceramic component of the gas delivery system. The formed green compact of ceramic material is fired to form the monolithic ceramic component of the gas delivery system.

Abstract: Apparatus and methods for sharing a gas panel among a plurality of multi-zone gas feed chambers of a plasma processing chamber. Each multi-zone gas feed chamber is provided with its own multi-zone gas feed device to adjustably split the incoming gas flow into each chamber and provide the different gas flows to different zones of the multi-zone gas feed chamber.

Abstract: A gas supply subsystem for providing a set of process gases to a substrate processing chamber, the set of process gases being a subset of a plurality of process gases available to the substrate processing chamber. The gas supply subsystem has fewer multi-gas mass flow controllers than the number of available process gases, wherein multiple process gases are multiplexed at the input of one or more of the multi-gas mass flow controllers. Pump-purge may be employed to improve gas switching speed for the multi-gas mass flow controllers.

Abstract: A system and method for processing a substrate in a processing chamber and providing an azimuthally evenly distributed draw on the processing byproducts using a gas pump down source coupled to the processing chamber above the plane of a substrate support within the processing chamber. The process chamber can include an annular plenum disposed between the support surface plane and the chamber top, the plenum including at least one vacuum inlet port coupled to the gas pump down source and a continuous inlet gap proximate to a perimeter of the substrate support, the continuous inlet gap having an inlet gas flow resistance of between about twice and about twenty times an outlet gas flow resistance the at least one vacuum inlet port.