Abstract: A method of forming a copper manganese sputtering target including subjecting a copper manganese billet to a first unidirectional forging step, heating the copper manganese billet to a temperature from about 650° C. to about 750° C., subjecting the copper manganese billet to a second unidirectional forging step, and heating the copper manganese billet to a temperature from about 500° C. to about 650° C. to form a copper alloy.

Abstract: A method of forming a high strength copper alloy. The method comprises heating a copper material including from about 2 wt. % to about 20 wt. % manganese by weight of the copper material to a temperature above 400° C., allowing the copper material to cool to a temperature from about 325° C. to about 350° C. to form a cooled copper material, and extruding the cooled copper material with equal channel angular extrusion to form a cooled copper manganese alloy.

Abstract: Disclosed herein is a method of forming an alloy material for use in a wire. The method includes forming a master alloy containing lead and silver; and creating a molten wire alloy by combining the master alloy, additional lead, and a third material in a vessel. The method also includes flowing argon gas through and over the molten wire alloy. The method also includes drawing the molten alloy from the vessel through an actively cooled die, and solidifying the molten wire alloy to form a bar of wire alloy.

Abstract: A method of forming a copper manganese sputtering target including subjecting a copper manganese billet to a first unidirectional forging step, heating the copper manganese billet to a temperature from about 650° C. to about 750° C., subjecting the copper manganese billet to a second unidirectional forging step, and heating the copper manganese billet to a temperature from about 500° C. to about 650° C. to form a copper alloy.

Abstract: A method of forming a high strength copper alloy. The method comprises heating a copper material including from about 2 wt. % to about 20 wt. % manganese by weight of the copper material to a temperature above 400° C., allowing the copper material to cool to a temperature from about 325° C. to about 350° C. to form a cooled copper material, and extruding the cooled copper material with equal channel angular extrusion to form a cooled copper manganese alloy.

Abstract: Disclosed herein is a method of forming an alloy material for use in a wire. The method includes forming a master alloy containing lead and silver; and creating a molten wire alloy by combining the master alloy, additional lead, and a third material in a vessel. The method also includes flowing argon gas through and over the molten wire alloy. The method also includes drawing the molten alloy from the vessel through an actively cooled die, and solidifying the molten wire alloy to form a bar of wire alloy.

Abstract: Deposition apparatus are described herein that include at least one coil, at least one coil set, at least one coil-related apparatus, at least one target-related apparatus or a combination thereof, wherein the at least one coil, at least one coil set, at least one coil-related apparatus, at least one target-related apparatus or a combination thereof comprises a surface, and wherein at least part of the surface comprises a regular depth pattern.

Abstract: A sputtering target is described herein, which includes: a) a surface material, and b) a core material coupled to the surface material, wherein at least one of the surface material or the core material has less than 100 ppm defect volume. Methods for producing sputtering targets are described that include: a) providing at least one sputtering target material, b) melting the at least one sputtering target material to provide a molten material, c) degassing the molten material, d) pouring the molten material into a target mold. In some embodiments, pouring the molten material into a target mold comprises under-pouring or under-skimming the molten material from the crucible into the target mold. Sputtering targets and related apparatus formed by and utilizing these methods are also described herein. In addition, uses of these sputtering targets are described herein.

Abstract: Methods for producing PVD sputtering targets comprising extended sidewalls are described that include: a) bonding a surface material to a core material to produce a rough part; b) forming the rough part; and in some embodiments, c) utilizing at least one machining step to form the target. In addition, methods for producing PVD sputtering targets comprising extended sidewalls are described herein that include: a) concurrently bonding a surface material to a core material to produce a rough part and forming the rough part; and in some embodiments, b) utilizing at least one machining step to form the target. PVD sputtering targets and related apparatus formed by and utilizing these methods are also described herein.