Abstract: A process for fabricating a semiconductor device is enhanced by providing a plasma etching process in which exposed metal surfaces within a plasma etching chamber (24) are protected by a ceramic layer (46). In the plasma etching process, a substrate (10) is placed on a platen (26) located within a plasma etching apparatus (22). A clamping device (40) secures the perimeter of the substrate (10) to the platen (26). The clamping device (40) includes a ceramic layer (46) overlying a metal base (44). When a plasma is ignited within the etching chamber (24), the ceramic layer (46) prevents physical contact of the plasma and the metal base (44) of the clamping device (40).

Abstract: A metal deposition process in which a high-purity metal film (46) is sputter deposited within a sputtering system (10) having insitu passivated metal components. A sputtering target (14) is provided having a thin aluminum coating (44) overlying a refractory metal layer (42). During operation, the aluminum coating (44) is sputtered away from the target (14) and onto exposed metal surfaces within the vacuum chamber (20) of the sputter deposition system (10). Subsequently, a semiconductor substrate (38) is placed in the sputter deposition system (10) and a high-purity metal film (46) is deposited onto the semiconductor substrate (38). Because the insitu passivation process avoid the oxidation of the passivating aluminum, refractory metal sputtered away from the target (14) adheres to the passivating aluminum layer, and does not re-deposit onto the surface of the semiconductor substrate (38) during the sputter deposition process.