Abstract: An integrated device includes a deep plug. The deep plug is formed by a deep trench extending in a semiconductor body from a shallow surface of a shallow trench isolation. A trench contact makes contact with a conductive filler of the deep trench through the shallow trench at its shallow surface. A system includes at least one integrated device with the deep plug. Moreover, a corresponding process for manufacturing this integrated device includes steps for forming and filling the deep trench before forming the shallow trench isolation and trench window through which the trench contact extends to make contact with the conductive filler. The semiconductor body has a thickness, and the deep trench extends into the semiconductor body less than the thickness.

Abstract: A method of cleaving a target RNA molecule is disclosed. In one embodiment the method comprises the step of exposing the target molecule to an eukaryotic tRNA splicing endonuclease, wherein the target molecule is in the bulge-helix-bulge conformation, wherein cleavage occurs within the bulge-helix-bulge and cleavage products are generated, and wherein the target molecule does not comprise a tRNA structure.