Patents by Inventor Irene S. Wan

Irene S. Wan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having reduced gate charge and reduced on resistance and method
    Patent number: 7538370
    Abstract: In one embodiment, a semiconductor device comprises a semiconductor material having a first conductivity type with a body region of a second conductivity type disposed in the semiconductor material. The body region is adjacent a JFET region. A source region of the first conductivity type is disposed in the body region. A gate layer is disposed over the semiconductor material and has a first opening over the JFET region and a second opening over the body region.
    Type: Grant
    Filed: January 18, 2007
    Date of Patent: May 26, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Prasad Venkatraman, Irene S. Wan
  • Semiconductor device having reduced gate charge and reduced on resistance and method
    Patent number: 7189608
    Abstract: In one embodiment, a semiconductor device comprises a semiconductor material having a first conductivity type with a body region of a second conductivity type disposed in the semiconductor material. The body region is adjacent a JFET region. A source region of the first conductivity type is disposed in the body region. A gate layer is disposed over the semiconductor material and has a first opening over the JFET region and a second opening over the body region.
    Type: Grant
    Filed: December 22, 2003
    Date of Patent: March 13, 2007
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Prasad Venkatraman, Irene S. Wan
  • Semiconductor device with high frequency parallel plate trench capacitor structure
    Patent number: 6984860
    Abstract: A semiconductor device (10) is formed on a semiconductor substrate (12) whose surface (24) is formed with a trench (18). A capacitor (20) has a first plate (22) formed over the substrate surface with first and second portions lining first and second sidewalls (25) of the trench, respectively. A second plate (35, 38) is formed over the first plate and extends into the trench between the first and second portions.
    Type: Grant
    Filed: November 27, 2002
    Date of Patent: January 10, 2006
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Gordon M. Grivna, Irene S. Wan, Sudhama C. Shastri
  • Semiconductor device with parallel plate trench capacitor and method
    Publication number: 20040099898
    Abstract: A semiconductor device (10) is formed on a semiconductor substrate (12) whose surface (24) is formed with a trench (18). A capacitor (20) has a first plate (22) formed over the substrate surface with first and second portions lining first and second sidewalls (25) of the trench, respectively. A second plate (35, 38) is formed over the first plate and extends into the trench between the first and second portions.
    Type: Application
    Filed: November 27, 2002
    Publication date: May 27, 2004
    Applicant: Semiconductor Components Industries, LLC.
    Inventors: Gordon M. Grivna, Irene S. Wan, Sudhama C. Shastri