Patents by Inventor Irene Wan

Irene Wan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE HAVING REDUCED GATE CHARGE AND REDUCED ON RESISTANCE AND METHOD
    Publication number: 20070117305
    Abstract: In one embodiment, a semiconductor device comprises a semiconductor material having a first conductivity type with a body region of a second conductivity type disposed in the semiconductor material. The body region is adjacent a JFET region. A source region of the first conductivity type is disposed in the body region. A gate layer is disposed over the semiconductor material and has a first opening over the JFET region and a second opening over the body region.
    Type: Application
    Filed: January 18, 2007
    Publication date: May 24, 2007
    Inventors: Prasad Venkatraman, Irene Wan
  • Semiconductor device having reduced gate charge and reduced on resistance and method
    Publication number: 20050136587
    Abstract: In one embodiment, a semiconductor device comprises a semiconductor material having a first conductivity type with a body region of a second conductivity type disposed in the semiconductor material. The body region is adjacent a JFET region. A source region of the first conductivity type is disposed in the body region. A gate layer is disposed over the semiconductor material and has a first opening over the JFET region and a second opening over the body region.
    Type: Application
    Filed: December 22, 2003
    Publication date: June 23, 2005
    Inventors: Prasad Venkatraman, Irene Wan