Patents by Inventor Irene Y. Su

Irene Y. Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Modeling and correcting short-range and long-range effects in E-beam lithography
    Patent number: 9484186
    Abstract: Processes and apparatuses are described for modeling and correcting electron-beam (e-beam) proximity effects during e-beam lithography. An uncalibrated e-beam model, which includes a long-range component and a short-range component, can be calibrated based on one or more test layouts. During correction, a first resist intensity map can be computed based on the long-range component of the calibrated e-beam model and a mask layout. Next, a target pattern in the mask layout can be corrected by, iteratively: (1) computing a second resist intensity map based on the short-range component of the calibrated e-beam model and the target pattern; (2) obtaining a combined resist intensity map by combining the first resist intensity map and the second resist intensity map; and (3) adjusting the target pattern based on the combined resist intensity map and the design intent.
    Type: Grant
    Filed: October 23, 2012
    Date of Patent: November 1, 2016
    Assignee: SYNOPSYS, INC.
    Inventors: Hua Song, Irene Y. Su, James P. Shiely
  • MODELING AND CORRECTING SHORT-RANGE AND LONG-RANGE EFFECTS IN E-BEAM LITHOGRAPHY
    Publication number: 20140114634
    Abstract: Processes and apparatuses are described for modeling and correcting electron-beam (e-beam) proximity effects during e-beam lithography. An uncalibrated e-beam model, which includes a long-range component and a short-range component, can be calibrated based on one or more test layouts. During correction, a first resist intensity map can be computed based on the long-range component of the calibrated e-beam model and a mask layout. Next, a target pattern in the mask layout can be corrected by, iteratively: (1) computing a second resist intensity map based on the short-range component of the calibrated e-beam model and the target pattern; (2) obtaining a combined resist intensity map by combining the first resist intensity map and the second resist intensity map; and (3) adjusting the target pattern based on the combined resist intensity map and the design intent.
    Type: Application
    Filed: October 23, 2012
    Publication date: April 24, 2014
    Applicant: SYNOPSYS, INC.
    Inventors: Hua Song, Irene Y. Su, James P. Shiely