Patents by Inventor Irfan Rahim

Irfan Rahim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11079282
    Abstract: Implementations of sensing devices may include a plurality of electromagnetic radiation sensing sections coupled to a flexible interconnect and one or more digital sections coupled to the flexible interconnect. The plurality of electromagnetic radiation sensing sections may be self-aligned through the flexible interconnect.
    Type: Grant
    Filed: November 28, 2018
    Date of Patent: August 3, 2021
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Irfan Rahim, Oswald L. Skeete, Ross F. Jatou
  • Publication number: 20210168312
    Abstract: Implementations of a pixel may include at least one photodiode coupled with a floating diffusion; a first metal-insulator-metal (MIM) capacitor including a first electrode and a second electrode; and a second MIM capacitor coupled in parallel with the first MIM capacitor, the second MIM capacitor including a first electrode and a second electrode. The first MIM capacitor and second MIM capacitor may be coupled with the floating diffusion.
    Type: Application
    Filed: November 23, 2020
    Publication date: June 3, 2021
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Raminda U. MADURAWE, Irfan RAHIM
  • Patent number: 10964705
    Abstract: In one embodiment, a method of forming a semiconductor device may include extending a gate conductor of a transistor to overlie a boundary of a well region in which the transistor is formed. The gate conductor may extend to make electrical contact with a gate conductor of a 2nd transistor that is formed external to the well region. A contact conductor may be applied to electrically and physically contact the first and 2nd gate conductors and to also overlie the boundary of the well region.
    Type: Grant
    Filed: September 10, 2018
    Date of Patent: March 30, 2021
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Irfan Rahim, Raminda Madurawe
  • Publication number: 20200166410
    Abstract: Implementations of sensing devices may include a plurality of electromagnetic radiation sensing sections coupled to a flexible interconnect and one or more digital sections coupled to the flexible interconnect. The plurality of electromagnetic radiation sensing sections may be self-aligned through the flexible interconnect.
    Type: Application
    Filed: November 28, 2018
    Publication date: May 28, 2020
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Irfan RAHIM, Oswald L. SKEETE, Ross F. JATOU
  • Publication number: 20200083231
    Abstract: In one embodiment, a method of forming a semiconductor device may include extending a gate conductor of a transistor to overlie a boundary of a well region in which the transistor is formed. The gate conductor may extend to make electrical contact with a gate conductor of a 2nd transistor that is formed external to the well region. A contact conductor may be applied to electrically and physically contact the first and 2nd gate conductors and to also overlie the boundary of the well region.
    Type: Application
    Filed: September 10, 2018
    Publication date: March 12, 2020
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Irfan RAHIM, Raminda MADURAWE
  • Patent number: 9812555
    Abstract: An integrated circuit die may include bottom-gate thin-body transistors. The bottom-gate thin-body transistors may be formed in a thinned-down substrate having a thickness that is defined by shallow trench isolation structures that provide complete well isolation for the transistors. The transistors may include gate terminal contacts formed through the shallow trench isolation structures, bulk terminal contacts that are formed through the thinned substrate and that overlap with the gate contacts, and source-drain terminal contacts with in-situ salicide. Additional metallization layers may be formed over the gate/bulk/source-drain contacts after bonding.
    Type: Grant
    Filed: May 28, 2015
    Date of Patent: November 7, 2017
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Raminda Madurawe, Hamid Soleimani, Irfan Rahim
  • Patent number: 9761624
    Abstract: Visual and near infrared pixels may have deep photodiodes to ensure sufficient capture of light. The pixels may have a silicon layer that is etched to form a microlens for the pixel. The pixels may include an inversion layer formed over the silicon layer to prevent dark current. Additionally, the pixels may include a conductive layer formed over the inversion layer that further prevents dark current. The conductive layer may be coupled to a bias voltage supply line. The conductive layer may be biased during image acquisition to prevent dark current. During readout, the bias voltage may be pulsed at a lower voltage to ensure all of the collected charge is transferred out of the photodiode during charge transfer.
    Type: Grant
    Filed: June 6, 2016
    Date of Patent: September 12, 2017
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Sergey Velichko, Victor Lenchenkov, Irfan Rahim
  • Publication number: 20170229496
    Abstract: Visual and near infrared pixels may have deep photodiodes to ensure sufficient capture of light. The pixels may have a silicon layer that is etched to form a microlens for the pixel. The pixels may include an inversion layer formed over the silicon layer to prevent dark current. Additionally, the pixels may include a conductive layer formed over the inversion layer that further prevents dark current. The conductive layer may be coupled to a bias voltage supply line. The conductive layer may be biased during image acquisition to prevent dark current. During readout, the bias voltage may be pulsed at a lower voltage to ensure all of the collected charge is transferred out of the photodiode during charge transfer.
    Type: Application
    Filed: June 6, 2016
    Publication date: August 10, 2017
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Sergey VELICHKO, Victor LENCHENKOV, Irfan RAHIM
  • Patent number: 9564464
    Abstract: An imaging system may be formed from multiple stacked wafers. A first wafer may include backside illuminated photodiodes, floating diffusion regions, and charge transfer gate structures. The first wafer may be bonded to a second wafer that includes pixel trunk transistors such as reset transistors, source-follower transistors, row-select transistors and associated logic circuits. The pixel trunk transistors may be formed using bottom-gate thin-body transistors. The first and second wafers may share the same backend metallization layers. The second wafer may further be bonded to a third wafer that includes digital signal processing circuits. The digital signal processing circuits may also be implemented using bottom-gate thin-body transistors. Additional metallization layers may be formed over the third wafer. The first, second, and third wafers may be fabricated using the same or different technology nodes.
    Type: Grant
    Filed: June 3, 2015
    Date of Patent: February 7, 2017
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Raminda Madurawe, Irfan Rahim
  • Patent number: 9520182
    Abstract: Integrated circuits with memory elements are provided. An integrated circuit may include logic circuitry formed in a first portion having complementary metal-oxide-semiconductor (CMOS) devices and may include at least a portion of the memory elements and associated memory circuitry formed in a second portion having nano-electromechanical (NEM) relay devices. The NEM and CMOS devices may be interconnected through vias in a dielectric stack. Devices in the first and second portions may receive respective power supply voltages. In one suitable arrangement, the memory elements may include two relay switches that provide nonvolatile storage characteristics and soft error upset (SEU) immunity. In another suitable arrangement, the memory elements may include first and second cross-coupled inverting circuits. The first inverting circuit may include relay switches, whereas the second inverting circuit includes only CMOS transistors.
    Type: Grant
    Filed: November 27, 2013
    Date of Patent: December 13, 2016
    Assignee: Altera Corporation
    Inventors: Lin-Shih Liu, Mark T. Chan, Yanzhong Xu, Irfan Rahim, Jeffrey T. Watt
  • Publication number: 20160358967
    Abstract: An imaging system may be formed from multiple stacked wafers. A first wafer may include backside illuminated photodiodes, floating diffusion regions, and charge transfer gate structures. The first wafer may be bonded to a second wafer that includes pixel trunk transistors such as reset transistors, source-follower transistors, row-select transistors and associated logic circuits. The pixel trunk transistors may be formed using bottom-gate thin-body transistors. The first and second wafers may share the same backend metallization layers. The second wafer may further be bonded to a third wafer that includes digital signal processing circuits. The digital signal processing circuits may also be implemented using bottom-gate thin-body transistors. Additional metallization layers may be formed over the third wafer. The first, second, and third wafers may be fabricated using the same or different technology nodes.
    Type: Application
    Filed: June 3, 2015
    Publication date: December 8, 2016
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Raminda MADURAWE, Irfan RAHIM
  • Publication number: 20160353038
    Abstract: An integrated circuit die may include bottom-gate thin-body transistors. The bottom-gate thin-body transistors may be formed in a thinned-down substrate having a thickness that is defined by shallow trench isolation structures that provide complete well isolation for the transistors. The transistors may include gate terminal contacts formed through the shallow trench isolation structures, bulk terminal contacts that are formed through the thinned substrate and that overlap with the gate contacts, and source-drain terminal contacts with in-situ salicide. Additional metallization layers may be formed over the gate/bulk/source-drain contacts after bonding.
    Type: Application
    Filed: May 28, 2015
    Publication date: December 1, 2016
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Raminda MADURAWE, Hamid SOLEIMANI, Irfan RAHIM
  • Patent number: 9496268
    Abstract: Asymmetric transistors may be formed by creating pocket implants on one source-drain terminal of a transistor and not the other. Asymmetric transistors may also be formed using dual-gate structures having first and second gate conductors of different work functions. Stacked transistors may be formed by stacking two transistors of the same channel type in series. One of the source-drain terminals of each of the two transistors is connected to a common node. The gates of the two transistors are also connected together. The two transistors may have different threshold voltages. The threshold voltage of the transistor that is located higher in the stacked transistor may be provided with a lower threshold voltage than the other transistor in the stacked transistor. Stacked transistors may be used to reduce leakage currents in circuits such as memory cells. Asymmetric transistors may also be used in memory cells to reduce leakage.
    Type: Grant
    Filed: May 2, 2014
    Date of Patent: November 15, 2016
    Assignee: Altera Corporation
    Inventors: Jun Liu, Yanzhong Xu, Shankar Sinha, Shih-Lin S. Lee, Jeffrey Xiaoqi Tung, Albert Ratnakumar, Qi Xiang, Irfan Rahim, Andy L. Lee, Jeffrey T. Watt, Srinivas Perisetty
  • Patent number: 9455715
    Abstract: In an exemplary embodiment, an apparatus includes a first set of circuit elements and a second set of circuit elements. The first set of circuit elements is used in a first configuration of the apparatus, and the second set of circuit elements is used in a second configuration of the apparatus. The first configuration of the apparatus is switched to the second configuration of the apparatus in order to improve reliability of the apparatus.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: September 27, 2016
    Assignee: Alterm Corporation
    Inventors: Bruce B. Pedersen, Irfan Rahim
  • Patent number: 9425192
    Abstract: Power supply decoupling capacitors are provided for integrated circuits. The decoupling capacitors may be distributed in clusters amongst powered circuit components. Each cluster may contain a number of individual capacitor cells that are connected in parallel. Each capacitor cell may contain a capacitor and a resistor connected in series with the capacitor. The capacitors may be metal-insulator-metal (MIM) capacitors. The resistor in each cell may limit the current through an individual capacitor in the event of a short in the capacitor due to a dielectric defect.
    Type: Grant
    Filed: December 11, 2008
    Date of Patent: August 23, 2016
    Assignee: Altera Corporation
    Inventors: Irfan Rahim, William Bradley Vest, Myron Wai Wong
  • Publication number: 20160232952
    Abstract: Asymmetric transistors may be formed by creating pocket implants on one source-drain terminal of a transistor and not the other. Asymmetric transistors may also be formed using dual-gate structures having first and second gate conductors of different work functions. Stacked transistors may be formed by stacking two transistors of the same channel type in series. One of the source-drain terminals of each of the two transistors is connected to a common node. The gates of the two transistors are also connected together. The two transistors may have different threshold voltages. The threshold voltage of the transistor that is located higher in the stacked transistor may be provided with a lower threshold voltage than the other transistor in the stacked transistor. Stacked transistors may be used to reduce leakage currents in circuits such as memory cells. Asymmetric transistors may also be used in memory cells to reduce leakage.
    Type: Application
    Filed: May 2, 2014
    Publication date: August 11, 2016
    Inventors: Jun Liu, Yanzhong Xu, Shankar Sinha, Shih-Lin S. Lee, Jeffrey Xiaoqi Tung, Albert Ratnakumar, Qi Xiang, Irfan Rahim, Andy L. Lee, Jeffrey T. Watt, Srinivas Perisetty
  • Patent number: 9412436
    Abstract: Memory elements are provided that exhibit immunity to soft error upset events when subjected to radiation strikes such as high-energy atomic particle strikes. Each memory element may each have four inverter-like transistor pairs that form a bistable element, a pair of address transistors, and a pair of relatively weak transistors connected between two of the inverters that create a common output node which is resistant to rapid changes to its state. The transistors may be connected in a pattern that forms a bistable memory element that is resistant to soft error upset events due to radiation strikes. Data may be loaded into and read out of the memory element using the address transistor pair.
    Type: Grant
    Filed: April 7, 2014
    Date of Patent: August 9, 2016
    Assignee: Altera Corporation
    Inventors: Irfan Rahim, Andy L. Lee, Jeffrey T. Watt, William Bradley Vest
  • Patent number: 9230048
    Abstract: Integrated circuits such as programmable integrated circuits may include programmable logic regions that can be configured to perform custom user functions. The programmable logic regions may produce output signals. The integrated circuit may include interconnects that route selected output signals throughout the integrated circuit. The integrated circuit may include output selection circuitry having output selection and interconnect selection stages. The output selection circuitry may be configured to select which of the output signals produced by the programmable logic regions are provided to the interconnects for routing. The interconnect selection stage may be formed using multiplexing circuits or tristate drivers. Logic design system computing equipment may be used to generate configuration data that can be used to program the output selection circuitry to reduce crosstalk by routing signals away from critical interconnects or by double-driving critical interconnects.
    Type: Grant
    Filed: September 30, 2014
    Date of Patent: January 5, 2016
    Assignee: Altera Corporation
    Inventors: Michael David Hutton, Irfan Rahim
  • Publication number: 20150318029
    Abstract: Asymmetric transistors may be formed by creating pocket implants on one source-drain terminal of a transistor and not the other. Asymmetric transistors may also be formed using dual-gate structures having first and second gate conductors of different work functions. Stacked transistors may be formed by stacking two transistors of the same channel type in series. One of the source-drain terminals of each of the two transistors is connected to a common node. The gates of the two transistors are also connected together. The two transistors may have different threshold voltages. The threshold voltage of the transistor that is located higher in the stacked transistor may be provided with a lower threshold voltage than the other transistor in the stacked transistor. Stacked transistors may be used to reduce leakage currents in circuits such as memory cells. Asymmetric transistors may also be used in memory cells to reduce leakage.
    Type: Application
    Filed: May 2, 2014
    Publication date: November 5, 2015
    Inventors: Jun Liu, Yanzhong Xu, Shankar Sinha, Shih-Lin S. Lee, Jeffrey Xiaoqi Tung, Albert Ratnakumar, Qi Xiang, Irfan Rahim, Andy L. Lee, Jeffrey T. Watt, Srinivas Perisetty
  • Patent number: 9165640
    Abstract: A method that includes using a PMOS pass gate to couple a first line to a second line, where a gate terminal of the PMOS pass gate is coupled to an output terminal of a memory cell, is described. In one implementation, the PMOS pass gate has a negative threshold voltage. In one implementation, the first line and the second line are respectively first and second interconnect lines of an IC.
    Type: Grant
    Filed: July 17, 2014
    Date of Patent: October 20, 2015
    Assignee: Altera Corporation
    Inventors: Jun Liu, Albert Ratnakumar, Irfan Rahim, Qi Xiang