Patents by Inventor Irina Eichwald

Irina Eichwald has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nanomagnetic logic gate and an electronic device
    Patent number: 8872547
    Abstract: A nanomagnetic logic gate arranged on a substrate according to an embodiment includes at least one nanomagnetic first structure, at least one nanomagnetic second structure and at least two layers including a first layer and a second layer, wherein at least one first structure is arranged in the first layer on or parallel to a main surface of the substrate, wherein at least one second structure is arranged in the second layer parallel to the first layer, and wherein at least one second structure includes an artificial nucleation center arranged such that a magnetic field component essentially perpendicular to the main surface provided by at least one first structure couples to the artificial nucleation center such that a magnetization of the second structure is changeable in response to the magnetic field component coupled into the artificial nucleation center, when a predetermined condition is fulfilled.
    Type: Grant
    Filed: July 30, 2013
    Date of Patent: October 28, 2014
    Assignee: Technische Universitaet Muenchen
    Inventors: Markus Becherer, Josef Kiermaier, Stephen Breitkreutz, Irina Eichwald, Doris Schmitt-Landsiedel
  • Nanomagnetic Logic Gate and an Electronic Device
    Publication number: 20140028351
    Abstract: A nanomagnetic logic gate arranged on a substrate according to an embodiment includes at least one nanomagnetic first structure, at least one nanomagnetic second structure and at least two layers including a first layer and a second layer, wherein at least one first structure is arranged in the first layer on or parallel to a main surface of the substrate, wherein at least one second structure is arranged in the second layer parallel to the first layer, and wherein at least one second structure includes an artificial nucleation center arranged such that a magnetic field component essentially perpendicular to the main surface provided by at least one first structure couples to the artificial nucleation center such that a magnetization of the second structure is changeable in response to the magnetic field component coupled into the artificial nucleation center, when a predetermined condition is fulfilled.
    Type: Application
    Filed: July 30, 2013
    Publication date: January 30, 2014
    Inventors: Markus Becherer, Josef Kiermaier, Stephan Breitkreutz, Irina Eichwald, Doris Schmitt-Landsiedel