Abstract: A semiconductor heterostructure includes separate, device quality regions of gallium arsenide and silicon layers on an insulating substrate such as aluminum oxide or silicon dioxide. The separate regions can be electrically isolated except for intended connections, permitting the fabrication of interrelated gallium arsenide and silicon semiconductor active devices on a single substrate. The device quality gallium arsenide is grown overlying the specially treated device quality silicon layer, by depositing a thin transition layer of gallium arsenide in low temperature growth, annealing it by solid phase epitaxy, and then depositing at a higher temperature a thicker epitaxial layer of gallium arsenide overlying the transition layer.

Abstract: A massage device which utilizes the combination of electroneurological stimulation and mechanical massage for medical treatment of pain. The apparatus includes a housing having a massage head formed from a plurality of elongate rollers, connected to the electrical output of a pulse-generating circuit. The rollers form a mechanical massaging head, while the electrical pulses stimulate underlying nerves to block or reduce pain. A second or ground electrode is provided by an expansion band which can be easily slipped on an ankle or wrist and is connected to the main electrical circuit by a flexible electrical cord. The pulse-generating circuit includes a pair of switches for selecting a discrete voltage amplitude over a varying predetermined range, and a light-emitting diode to indicate operation of the pulse-generating circuit. Also included in the case or housing is a ball electrode for massaging and treating particular body points known as acupuncture or trigger points.