Patents by Inventor Irvinder Kaur
Irvinder Kaur has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11940731Abstract: Photoresist topcoat compositions comprise: a matrix polymer and a surface active polymer, wherein the surface active polymer comprises polymerized units of the following general formula (I): wherein: R1 represents a hydrogen atom, a halogen atom, a C1-C4 alkyl group, or a C1-C4 haloalkyl group; R2 independently represents a hydrogen atom or an optionally substituted alkyl group, wherein at least one R2 is not a hydrogen atom, wherein the R2 groups taken together optionally form a cyclic structure, and wherein the total number of carbon atoms for the R2 groups taken together is from 2 to 20; R3 represents an optionally substituted C1-C4 alkylene group, wherein an R2 group optionally forms a cyclic structure with R3; and R4 independently represents C1-C4 fluoroalkyl groups; wherein the total polymerized units of general formula (I) are present in the surface active polymer in an amount of 95 wt % or more based on total polymerized units of the surface active polymer; and wherein the surface active polymer iType: GrantFiled: June 24, 2019Date of Patent: March 26, 2024Assignee: Rohm and Haas Electronic Materials LLCInventors: Irvinder Kaur, Cong Liu, Doris Kang, Chunyi Wu
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Publication number: 20240093027Abstract: Disclosed herein is a copolymer comprising first polymerized units of the formula (1): wherein: R1 is H or a substituted or unsubstituted C1-C6 alkyl group; and R2 is a substituted or unsubstituted C3-C20 alkyl group that optionally includes one or more of —O—, —S—, —N—, —C(O)—, or —C(O)O—, —N—C(O)—, —C(O)—NR—; wherein R is H or a substituted or unsubstituted C1-C6 alkyl group; and second polymerized units of the formula (2): wherein: R3 is a substituted or unsubstituted C1-C6 alkyl group that optionally includes one or more of —O—, —N—, —S—, —C(O)—, or —C(O)O—; wherein the first polymerized units and the second polymerized units are chemically different, and the copolymer is free of fluorine.Type: ApplicationFiled: November 28, 2023Publication date: March 21, 2024Inventors: Mingqi Li, Irvinder Kaur
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Patent number: 11859082Abstract: Disclosed herein is a copolymer comprising first polymerized units of the formula (1); wherein: R1 is H or a substituted or unsubstituted C1-C6 alkyl group; and R2 is a substituted or unsubstituted C3-C20 alkyl group that optionally includes one or more of —O—, —S—, —N—, —C(O)—, or —C(O)O—, —N—C(O)—, —C(O)—NR—; wherein R is H or a substituted or unsubstituted C1-C6 alkyl group; and second polymerized units of the formula (2): wherein: R3 is a substituted or unsubstituted C1-C6 alkyl group that optionally includes one or more of —O—, —N—, —S—, —C(O)—, or —C(O)O—; wherein the first polymerized units and the second polymerized units are chemically different, and the copolymer is free of fluorine.Type: GrantFiled: December 31, 2020Date of Patent: January 2, 2024Assignee: ROHM AND HAAS ELECTRONIC MATERIALS LLCInventors: Mingqi Li, Irvinder Kaur
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Patent number: 11796916Abstract: A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R1—C(O)O—R2, wherein R1 is a C3-C6 alkyl group and R2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.Type: GrantFiled: April 12, 2021Date of Patent: October 24, 2023Assignee: ROHM AND HAAS ELECTRONIC MATERIALS LLCInventors: Xisen Hou, Cong Liu, Irvinder Kaur
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Patent number: 11754927Abstract: Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the aromatic sulfonic acid is of general formula (I): wherein: Ar1 represents an aromatic group; R1 independently represents a halogen atom, hydroxy, substituted or unsubstituted alkyl, substituted or unsubstituted heteroalkyl, substituted or unsubstituted carbocyclic aryl, substituted or unsubstituted heterocyclic aryl, substituted or unsubstituted alkoxy, or a combination thereof, wherein adjacent R1 groups together optionally form a fused ring structure with Ar1; a represents an integer of 2 or more; and b represents an integer of 1 or more, provided that a+b is at least 3 and is not greater than the total number of available aromatic carbon atoms of Ar1, and two or more of R1 are independently a fluorine atom or a fluoroalkyl group bonded directly to an aromatic ring carbon atom.Type: GrantFiled: May 11, 2020Date of Patent: September 12, 2023Assignee: ROHM AND HAAS ELECTRONIC MATERIALS LLCInventors: Irvinder Kaur, Colin Liu, Xisen Hou, Kevin Rowell, Mingqi Li, Cheng-Bai Xu
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Publication number: 20230251575Abstract: Photoresist topcoat compositions comprise: a first polymer that is fluorinated, a second polymer, and an organic-based solvent system comprising an ester solvent and one or more additional organic solvents, wherein the composition is substantially free of photoacid generator compounds. The invention finds particular applicability in the manufacture of semiconductor devices.Type: ApplicationFiled: December 15, 2022Publication date: August 10, 2023Inventors: Irvinder Kaur, Doris H. Kang, Cong Liu
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Publication number: 20230161257Abstract: A polymer, comprising a first repeating unit derived from a first monomer comprising a single ester acetal group, and a second repeating unit derived from a second monomer comprising a plurality of ester acetal groups.Type: ApplicationFiled: September 30, 2021Publication date: May 25, 2023Inventors: Irvinder Kaur, Charlotte Cutler, Ke Yang, Mingqi Li
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Publication number: 20230152697Abstract: Photoresist compositions comprise: an acid-sensitive polymer comprising a repeating unit comprising an ester acetal group, wherein the acid-sensitive polymer is free of tertiary alkyl ester groups and is substantially free of aromatic groups; a material comprising a base-labile group; a photoacid generator compound that is free of fluorine which generates an acid having a pKa of -2 or greater, and wherein the photoresist composition is free of photoacid generators that generate an acid having a pKa of less than -2; and a solvent.. The photoresist compositions and pattern formation methods using the photoresist compositions find particular use in the formation of fine lithographic patterns in the semiconductor manufacturing industry.Type: ApplicationFiled: September 8, 2022Publication date: May 18, 2023Inventors: KE YANG, MINGQI LI, CHOONG-BONG LEE, CHENG-BAI XU, IRVINDER KAUR, TOMAS MARANGONI, JOSHUA KAITZ
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Publication number: 20230104679Abstract: A photoresist composition, comprising: a polymer comprising: a first repeating unit derived from a first monomer comprising a substituted lactone, wherein the first repeating unit comprises a lactone ring derived from the substituted lactone, and wherein a carbon atom of the lactone ring forms a part of a backbone of the polymer, and a second repeating unit derived from a second monomer comprising an acetal group; a photoacid generator; and a solvent.Type: ApplicationFiled: September 30, 2021Publication date: April 6, 2023Inventors: Irvinder Kaur, Joshua Kaitz, Ke Yang, Mingqi Li, Charlotte Cutler
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Patent number: 11506981Abstract: Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the polymer comprises polymerized units of general formulas (I) and (II): wherein: X independently represents a halogen atom; Q represents a single bond, —O—, or —C(O)O—; R1 independently represents hydrogen, a halogen atom, C1-C12 alkyl or C1-C12 fluoroalkyl; R2 represents C1-C3 alkyl or C1-C3 fluoroalkyl; and m is an integer from 0 to 4; and wherein the polymerized units of general formula (I) are present in the polymer in an amount of 10 to 90 mol % and the polymerized units of general formula (II) are present in the polymer in an amount from 10 to 60 mol %, based on total polymerized units of the polymer. The photoresist pattern trimming compositions and their use in pattern formation methods find particular applicability in the manufacture of semiconductor devices.Type: GrantFiled: May 12, 2020Date of Patent: November 22, 2022Assignee: ROHM AND HAAS ELECTRONIC MATERIALS LLCInventors: Xisen Hou, Irvinder Kaur, Cong Liu, Mingqi Li, Kevin Rowell, Cheng-Bai Xu
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Publication number: 20220204760Abstract: Disclosed herein is a copolymer comprising first polymerized units of the formula (1); wherein: R1 is H or a substituted or unsubstituted C1-C6 alkyl group; and R2 is a substituted or unsubstituted C3-C20 alkyl group that optionally includes one or more of —O—, —S—, —N—, —C(O)—, or —C(O)O—, —N—C(O)—, —C(O)—NR—; wherein R is H or a substituted or unsubstituted C1-C6 alkyl group; and second polymerized units of the formula (2): wherein: R3 is a substituted or unsubstituted C1-C6 alkyl group that optionally includes one or more of —O—, —N—, —S—, —C(O)—, or —C(O)O—; wherein the first polymerized units and the second polymerized units are chemically different, and the copolymer is free of fluorine.Type: ApplicationFiled: December 31, 2020Publication date: June 30, 2022Inventors: Mingqi Li, Irvinder Kaur
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Publication number: 20220128906Abstract: Photoresist pattern trimming compositions comprise: a polymer comprising as polymerized units a monomer comprising an acid-decomposable group, the decomposition of which group forms a carboxylic acid group on the polymer; a non-polymeric acid or a non-polymeric thermal acid generator; and an organic-based solvent system comprising one or more organic solvents. Methods of trimming photoresist patterns involve applying such pattern trimming compositions to a photoresist pattern that is formed from a photoresist composition comprising a photoacid generator and a polymer comprising acid-decomposable groups. The photoresist pattern trimming compositions and pattern formation methods find particular use in the formation of fine lithographic patterns in the semiconductor manufacturing industry.Type: ApplicationFiled: October 27, 2020Publication date: April 28, 2022Inventors: Irvinder Kaur, Cong Liu, Kevin Rowell
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Publication number: 20210232047Abstract: A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R1—C(O)O—R2, wherein R1 is a C3-C6 alkyl group and R2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.Type: ApplicationFiled: April 12, 2021Publication date: July 29, 2021Inventors: Xisen Hou, Cong Liu, Irvinder Kaur
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Patent number: 11003074Abstract: A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R1—C(O)O—R2, wherein R1 is a C3-C6 alkyl group and R2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.Type: GrantFiled: April 24, 2018Date of Patent: May 11, 2021Assignee: Rohm and Haas Electronic Materials LLCInventors: Xisen Hou, Cong Liu, Irvinder Kaur
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Publication number: 20200379351Abstract: Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the polymer comprises polymerized units of general formulas (I) and (II): wherein: X independently represents a halogen atom; Q represents a single bond, —O—, or —C(O)O—; R1 independently represents hydrogen, a halogen atom, C1-C12 alkyl or C1-C12 fluoroalkyl; R2 represents C1-C3 alkyl or C1-C3 fluoroalkyl; and m is an integer from 0 to 4; and wherein the polymerized units of general formula (I) are present in the polymer in an amount of 10 to 90 mol % and the polymerized units of general formula (II) are present in the polymer in an amount from 10 to 60 mol %, based on total polymerized units of the polymer. The photoresist pattern trimming compositions and their use in pattern formation methods find particular applicability in the manufacture of semiconductor devices.Type: ApplicationFiled: May 12, 2020Publication date: December 3, 2020Inventors: Xisen Hou, Irvinder Kaur, Cong Liu, Mingqi Li, Kevin Rowell, Cheng-Bai Xu
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Publication number: 20200379353Abstract: Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the aromatic sulfonic acid is of general formula (I): wherein: Ar1 represents an aromatic group; R1 independently represents a halogen atom, hydroxy, substituted or unsubstituted alkyl, substituted or unsubstituted heteroalkyl, substituted or unsubstituted carbocyclic aryl, substituted or unsubstituted heterocyclic aryl, substituted or unsubstituted alkoxy, or a combination thereof, wherein adjacent R1 groups together optionally form a fused ring structure with Ar1; a represents an integer of 2 or more; and b represents an integer of 1 or more, provided that a+b is at least 3 and is not greater than the total number of available aromatic carbon atoms of Ar1, and two or more of R1 are independently a fluorine atom or a fluoroalkyl group bonded directly to an aromatic ring carbon atom.Type: ApplicationFiled: May 11, 2020Publication date: December 3, 2020Inventors: Irvinder KAUR, Colin LIU, Xisen Hou, Kevin Rowell, Mingqi LI, Cheng-Bai Xu
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Patent number: 10684549Abstract: Pattern-formation methods comprise: (a) providing a substrate; (b) forming a photoresist pattern over the substrate; (c) applying a pattern treatment composition to the photoresist pattern, the pattern treatment composition comprising a solvent mixture comprising a first organic solvent and a second organic solvent, wherein the first organic solvent has a boiling point that is greater than a boiling point of the second organic solvent, and wherein the first organic solvent has a boiling point of 210° C. or more; and (d) thereafter heating the photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices.Type: GrantFiled: December 19, 2017Date of Patent: June 16, 2020Assignee: Rohm and Haas Electronic Materials LLCInventors: Kevin Rowell, Cong Liu, Cheng Bai Xu, Irvinder Kaur, Xisen Hou, Mingqi Li
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Patent number: 10578969Abstract: Photoresist topcoat compositions, comprising: a first polymer comprising a first repeat unit of general formula (I) and a second repeat unit of general formula (II): wherein: R1 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R2 represents optionally fluorinated linear, branched or cyclic C1 to C20 alkyl; L1 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; a second polymer comprising a first repeat unit of general formula (III) and a second repeat unit of general formula (IV): wherein: R3 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R4 represents linear, branched or cyclic C1 to C20 alkyl; R5 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L2 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; and a solvent. Coated substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided.Type: GrantFiled: January 11, 2019Date of Patent: March 3, 2020Assignee: Rohm and Haas Electronic Materials LLCInventors: Cong Liu, Doris H. Kang, Deyan Wang, Cheng-Bai Xu, Mingqi Li, Irvinder Kaur
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Publication number: 20200004152Abstract: Photoresist topcoat compositions comprise: a matrix polymer and a surface active polymer, wherein the surface active polymer comprises polymerized units of the following general formula (I): wherein: R1 represents a hydrogen atom, a halogen atom, a C1-C4 alkyl group, or a C1-C4 haloalkyl group; R2 independently represents a hydrogen atom or an optionally substituted alkyl group, wherein at least one R2 is not a hydrogen atom, wherein the R2 groups taken together optionally form a cyclic structure, and wherein the total number of carbon atoms for the R2 groups taken together is from 2 to 20; R3 represents an optionally substituted C1-C4 alkylene group, wherein an R2 group optionally forms a cyclic structure with R3; and R4 independently represents C1-C4 fluoroalkyl groups; wherein the total polymerized units of general formula (I) are present in the surface active polymer in an amount of 95 wt % or more based on total polymerized units of the surface active polymer; and wherein the surface active polymer iType: ApplicationFiled: June 24, 2019Publication date: January 2, 2020Inventors: Irvinder KAUR, Cong Liu, Doris Kang, Chunyi Wu
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Patent number: 10481495Abstract: Provided are topcoat compositions that include: a matrix polymer; a surface active polymer; an ionic thermal acid generator comprising an anion and a cation, wherein the anion, the cation, or the anion and the cation are fluorinated; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.Type: GrantFiled: February 7, 2019Date of Patent: November 19, 2019Assignee: Rohm and Haas Electronic Materials LLCInventors: Irvinder Kaur, Doris Kang, Cong Liu, Gerhard Pohlers, Mingqi Li