Abstract: Disclosed are laser scribing systems for laser scribing semiconductor substrates with backside coatings. In particular these laser scribing systems laser scribe opto-electric semiconductor wafers with reflective backside coatings so as to avoid damage to the opto-electric device while maintaining efficient manufacturing. In more particular these laser scribing systems employ ultrafast pulsed lasers at wavelength in the visible region and below in multiple passes to remove the backside coatings and scribe the wafer.

Abstract: A light emitting diode is made using a laser to texture the sidewalls of the bottom contact layer, without damaging a mesa. To do so, the substrate is mounted on a laser machining platform, and trenches are cut along lines through the semiconductor layer on the substrate using a first sequence of laser pulses having short pulse lengths that result in formation of textured sidewalls in the trenches, without causing recasting of the material. Then the substrate can be scribed along the lines of the trenches using a second sequence of laser pulses for singulation of die.

Abstract: Disclosed are laser scribing systems for laser scribing semiconductor substrates with backside coatings. In particular these laser scribing systems laser scribe opto-electric semiconductor wafers with reflective backside coatings so as to avoid damage to the opto-electric device while maintaining efficient manufacturing. In more particular these laser scribing systems employ ultrafast pulsed lasers at wavelength in the visible region and below in multiple passes to remove the backside coatings and scribe the wafer.

Abstract: The present invention is a system and method for laser-assisted singulation of light emitting electronic devices manufactured on a substrate, having a processing surface and a depth extending from the processing surface. It includes providing a laser processing system having a picosecond laser having controllable parameters; controlling the laser parameters to form light pulses from the picosecond laser, to form a modified region having a depth which spans about 50% of the depth and substantially including the processing surface of the substrate and having a width less than about 5% of the region depth; and, singulating the substrate by applying mechanical stress to the substrate thereby cleaving the substrate into said light emitting electronic devices having sidewalls formed at least partially in cooperation with the linear modified regions.