Patents by Inventor Isaac Harshman Wildeson
Isaac Harshman Wildeson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11594572Abstract: A light emitting diode (LED) array may include a first pixel and a second pixel on a substrate. The first pixel and the second pixel may include one or more tunnel junctions on one or more LEDs. The LED array may include a first trench between the first pixel and the second pixel. The trench may extend to the substrate.Type: GrantFiled: June 24, 2021Date of Patent: February 28, 2023Assignee: Lumileds LLCInventors: Isaac Harshman Wildeson, Parijat Pramil Deb, Robert Armitage
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Publication number: 20210327953Abstract: A light emitting diode (LED) array may include a first pixel and a second pixel on a substrate. The first pixel and the second pixel may include one or more tunnel junctions on one or more LEDs. The LED array may include a first trench between the first pixel and the second pixel. The trench may extend to the substrate.Type: ApplicationFiled: June 24, 2021Publication date: October 21, 2021Applicant: Lumileds LLCInventors: Isaac Harshman Wildeson, Parijat Pramil Deb, Robert Armitage
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Patent number: 11152539Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.Type: GrantFiled: April 8, 2020Date of Patent: October 19, 2021Assignee: LUMILEDS LLCInventors: Isaac Harshman Wildeson, Patrick Nolan Grillot, Tigran Nshanian, Parijat Pramil Deb
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Patent number: 11081622Abstract: A light emitting diode (LED) array may include a first pixel and a second pixel on a substrate. The first pixel and the second pixel may include one or more tunnel junctions on one or more LEDs. The LED array may include a first trench between the first pixel and the second pixel. The trench may extend to the substrate.Type: GrantFiled: September 2, 2020Date of Patent: August 3, 2021Assignee: Lumileds LLCInventors: Isaac Harshman Wildeson, Parijat Pramil Deb, Robert Armitage
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Patent number: 10868213Abstract: A light emitting diode (LED) device may include an n-type layer formed on a transparent substrate. A photoluminescent (PL) in the n-type layer quantum well (QW) and an electroluminescent (EL) QW may be formed on the n-type layer. The PL QW and the EL QW may be separated from one another by a portion of the n-type layer. A p-type layer may be formed on the EL QW. Trenches may be formed extending into the n-type layer, the trenches defining an emitting area. A passivation material may be formed on sidewalls of the trenches and n-type contacts may be formed therein. A p-type contact may be formed on an upper surface of the p-type layer. A dichroic mirror may be formed on at least a lower surface of the transparent substrate.Type: GrantFiled: June 26, 2018Date of Patent: December 15, 2020Assignee: Lumileds LLCInventors: Robert David Armitage, Isaac Harshman Wildeson, Parijat Pramil Deb
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Patent number: 10804429Abstract: A light emitting diode (LED) array may include a first pixel and a second pixel on a substrate. The first pixel and the second pixel may include one or more tunnel junctions on one or more LEDs. The LED array may include a first trench between the first pixel and the second pixel. The trench may extend to the substrate.Type: GrantFiled: December 20, 2018Date of Patent: October 13, 2020Assignee: Lumileds LLCInventors: Isaac Harshman Wildeson, Parijat Pramil Deb, Robert Armitage
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Patent number: 10651340Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.Type: GrantFiled: November 14, 2018Date of Patent: May 12, 2020Assignee: Lumileds LLCInventors: Patrick Nolan Grillot, Isaac Harshman Wildeson, Tigran Nshanian, Parijat Pramil Deb
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Publication number: 20190393379Abstract: A light emitting diode (LED) device may include an n-type layer formed on a transparent substrate. A photoluminescent (PL) in the n-type layer quantum well (QW) and an electroluminescent (EL) QW may be formed on the n-type layer. The PL QW and the EL QW may be separated from one another by a portion of the n-type layer. A p-type layer may be formed on the EL QW. Trenches may be formed extending into the n-type layer, the trenches defining an emitting area. A passivation material may be formed on sidewalls of the trenches and n-type contacts may be formed therein. A p-type contact may be formed on an upper surface of the p-type layer. A dichroic mirror may be formed on at least a lower surface of the transparent substrate.Type: ApplicationFiled: June 26, 2018Publication date: December 26, 2019Applicant: Lumileds LLCInventors: Robert David ARMITAGE, Isaac Harshman WILDESON, Parijat Pramil DEB
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Publication number: 20190198709Abstract: A device may include a first light emitting diode (LED) on a first surface of a substrate, a first tunnel junction on the first LED a first semiconductor layer on the first tunnel junction, and a conformal dielectric layer on at least a sidewall of the LED and the first surface of the substrate.Type: ApplicationFiled: December 20, 2018Publication date: June 27, 2019Applicant: Lumileds LLCInventors: Isaac Harshman Wildeson, Parijat Pramil Deb, Robert Armitage
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Publication number: 20190198561Abstract: A light emitting diode (LED) array may include a first pixel and a second pixel on a substrate. The first pixel and the second pixel may include one or more tunnel junctions on one or more LEDs. The LED array may include a first trench between the first pixel and the second pixel. The trench may extend to the substrate.Type: ApplicationFiled: December 20, 2018Publication date: June 27, 2019Applicant: Lumileds LLCInventors: Isaac Harshman WILDESON, Parijat Pramil DEB, Robert ARMITAGE
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Publication number: 20190081207Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.Type: ApplicationFiled: November 14, 2018Publication date: March 14, 2019Applicant: Lumileds LLCInventors: Patrick Nolan Grillot, Isaac Harshman Wildeson, Tigran Nshanian, Parijat Pramil Deb
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Patent number: 10193015Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.Type: GrantFiled: June 27, 2016Date of Patent: January 29, 2019Assignee: LUMILEDS LLCInventors: Patrick Nolan Grillot, Isaac Harshman Wildeson, Tigran Nshanian, Parijat Pramil Deb
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Publication number: 20160308092Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.Type: ApplicationFiled: June 27, 2016Publication date: October 20, 2016Inventors: Patrick Nolan Grillot, Isaac Harshman Wildeson, Tigran Nshanian, Parijat Pramil Deb
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Patent number: 9406836Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.Type: GrantFiled: July 3, 2013Date of Patent: August 2, 2016Assignee: Koninklijke Philips N.V.Inventors: Patrick Nolan Grillot, Isaac Harshman Wildeson, Tigran Nshanian, Parijan Pramil Deb
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Publication number: 20150207024Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.Type: ApplicationFiled: July 3, 2013Publication date: July 23, 2015Inventors: Patrick Nolan Grillot, Isaac Harshman Wildeson, Tigran Nshanian, Parijan Pramil Deb
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Patent number: 8986835Abstract: A GaN nanorod and formation method. Formation includes providing a substrate having a GaN film, depositing SiNx on the GaN film, etching a growth opening through the SiNx and into the GaN film, growing a GaN nanorod through the growth opening, the nanorod having a nanopore running substantially through its centerline. Focused ion beam etching can be used. The growing can be done using organometallic vapor phase epitaxy. The nanopore diameter can be controlled using the growth opening diameter or the growing step duration. The GaN nanorods can be removed from the substrate. The SiNx layer can be removed after the growing step. A SiOx template can be formed on the GaN film and the GaN can be grown to cover the SiOx template before depositing SiNx on the GaN film. The SiOx template can be removed after growing the nanorods.Type: GrantFiled: April 5, 2011Date of Patent: March 24, 2015Assignee: Purdue Research FoundationInventors: Isaac Harshman Wildeson, Timothy David Sands
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Publication number: 20110244235Abstract: A GaN nanorod and formation method. Formation includes providing a substrate having a GaN film, depositing SiNx on the GaN film, etching a growth opening through the SiNx and into the GaN film, growing a GaN nanorod through the growth opening, the nanorod having a nanopore running substantially through its centerline. Focused ion beam etching can be used. The growing can be done using organometallic vapor phase epitaxy. The nanopore diameter can be controlled using the growth opening diameter or the growing step duration. The GaN nanorods can be removed from the substrate. The SiNx layer can be removed after the growing step. A SiOx template can be formed on the GaN film and the GaN can be grown to cover the SiOx template before depositing SiNx on the GaN film. The SiOx template can be removed after growing the nanorods.Type: ApplicationFiled: April 5, 2011Publication date: October 6, 2011Inventors: Isaac Harshman Wildeson, Timothy David Sands
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PROCESS FOR FABRICATING III-NITRIDE BASED NANOPYRAMID LEDS DIRECTLY ON A METALIZED SILICON SUBSTRATE
Publication number: 20110079766Abstract: A nanopyramid LED and method for forming. The nanopyramid LED includes a silicon substrate, a III-nitride layer deposited thereon, a metal layer deposited thereon; and a nanopyramid LED grown in ohmic contact with the metal layer. The nanopyramid LED can be seeded on the III-nitride layer or metal layer. The metal layer can be a reflecting surface for the nanopyramid LED. The method for forming nanopyramid LEDs includes obtaining a silicon substrate, depositing a III-nitride layer thereon, depositing a metal layer thereon, depositing a dielectric growth layer thereon, etching a dielectric growth template in the growth layer, and growing III-nitride nanopyramid LEDs through the dielectric growth template in ohmic contact with the metal layer. The etching can be performed by focused ion beam etching. The etching can stop in the metal layer or III-nitride layer, so that the nanopyramid LEDs can seed off the metal layer or III-nitride layer, respectively.Type: ApplicationFiled: October 1, 2010Publication date: April 7, 2011Inventors: Isaac Harshman Wildeson, Timothy David Sands