Abstract: In some examples, a touch screen includes resistors between the touch electrodes and routing traces. In some examples, the resistors can include a transparent conductive material included in the touch electrodes of the touch screen. The resistors can be located in a border region of the touch screen that can surround an active area of the touch screen that can include the touch electrodes and display pixels of the touch screen, for example. In some examples, the resistors included in the touch screen can have different resistances from each other and the same outer dimensions as one another. The resistors can reduce the variation in resistance from channel to channel in the touch screen, which can improve touch screen performance, for example.

Abstract: In some examples, a touch screen includes resistors between the touch electrodes and routing traces. In some examples, the resistors can include a transparent conductive material included in the touch electrodes of the touch screen. The resistors can be located in a border region of the touch screen that can surround an active area of the touch screen that can include the touch electrodes and display pixels of the touch screen, for example. In some examples, the resistors included in the touch screen can have different resistances from each other and the same outer dimensions as one another. The resistors can reduce the variation in resistance from channel to channel in the touch screen, which can improve touch screen performance, for example.

Abstract: In some examples, a touch screen includes resistors between the touch electrodes and routing traces. In some examples, the resistors can include a transparent conductive material included in the touch electrodes of the touch screen. The resistors can be located in a border region of the touch screen that can surround an active area of the touch screen that can include the touch electrodes and display pixels of the touch screen, for example. In some examples, the resistors included in the touch screen can have different resistances from each other and the same outer dimensions as one another. The resistors can reduce the variation in resistance from channel to channel in the touch screen, which can improve touch screen performance, for example.

Abstract: In some examples, a touch screen includes resistors between the touch electrodes and routing traces. In some examples, the resistors can include a transparent conductive material included in the touch electrodes of the touch screen. The resistors can be located in a border region of the touch screen that can surround an active area of the touch screen that can include the touch electrodes and display pixels of the touch screen, for example. In some examples, the resistors included in the touch screen can have different resistances from each other and the same outer dimensions as one another. The resistors can reduce the variation in resistance from channel to channel in the touch screen, which can improve touch screen performance, for example.

Abstract: In some examples, a touch screen includes resistors between the touch electrodes and routing traces. In some examples, the resistors can include a transparent conductive material included in the touch electrodes of the touch screen. The resistors can be located in a border region of the touch screen that can surround an active area of the touch screen that can include the touch electrodes and display pixels of the touch screen, for example. In some examples, the resistors included in the touch screen can have different resistances from each other and the same outer dimensions as one another. The resistors can reduce the variation in resistance from channel to channel in the touch screen, which can improve touch screen performance, for example.

Abstract: In some examples, a touch screen includes resistors between the touch electrodes and routing traces. In some examples, the resistors can include a transparent conductive material included in the touch electrodes of the touch screen. The resistors can be located in a border region of the touch screen that can surround an active area of the touch screen that can include the touch electrodes and display pixels of the touch screen, for example. In some examples, the resistors included in the touch screen can have different resistances from each other and the same outer dimensions as one another. The resistors can reduce the variation in resistance from channel to channel in the touch screen, which can improve touch screen performance, for example.

Abstract: A touch sensor panel can include a silver nanowire touch electrodes formed in a silver nanowire layer on the substrate. In some examples, the touch sensor panel can include one or more anticorrosion layers to protect silver nanowire layer from ionization. In some examples, the silver nanowires include electrochemically stable outer shells that protect the silver nanowires from ionization. Additionally or alternatively, the touch sensor panel can including one or more anti-static layers to protect against electrostatic discharge (ESD). Additionally or alternatively, one or more anticorrosion layers and/or one or more antistatic layers can be formed with a passivation layer therebetween. The passivation layer, one or more anticorrosion layers and/or one or more antistatic layers can then be laminated to the silver nanowire layer to prevent corrosion and/or ESD events in the silver nanowire layer during the fabrication of the touch sensor panel.

Abstract: Transparent conductors including a silver layer with high transparency and low sheet resistance are described. In some examples, the silver layer can be located between two transparent conductive oxide layers. The transparent conductor can further include additional transparent conductive oxide layers, optical layers, and/or additional conductive layers (e.g., layers including ITO or another fully or partially transparent conductive material), for example. In some examples, transparent conductors including a silver layer can be included in a touch screen device. For example, one or more shielding layers or one or more touch electrodes can include transparent conductors with a silver layer. In some examples, the silver layer can improve transparency, sheet resistance, and/or infrared reflection characteristics of the transparent conductor.

Abstract: A sensing apparatus including a first scan line, a second scan line, a readout line, a first sensing device and a second sensing device is provided. The first sensing device is coupled to the first scan line and the readout line, and senses a first energy, and outputs a first readout signal corresponding to the first energy to the readout line in response to a first scan signal on the first scan line. The first sensing device is reset in response to the first scan signal and a reference signal on the readout line. The first sensing device includes a first reset unit configured for resetting the first sensing device, where a first terminal of the first reset unit is coupled to the first scan line, and a control terminal of the first reset unit is coupled to the readout line. A driving method thereof is also provided.

Abstract: A photoelectric element including a transparent bottom electrode, a photosensitive layer, a first electrode, a second electrode and a transparent top electrode is provided. The photosensitive layer is located above the transparent bottom electrode. The first electrode and the second electrode are disposed on the photosensitive layer. The transparent top electrode is located above the photosensitive layer.

Abstract: The disclosure provides a method for fabricating the flexible electronic devices, including: providing a first rigid carrier substrate and a second rigid carrier substrate, wherein at least one flexible electronic device is formed between the first rigid carrier substrate and the second rigid carrier substrate, and a plurality of first de-bonding areas, a first flexible substrate, the flexible electronic device, a second flexible substrate, a plurality of second de-bonding areas and the second rigid carrier substrate are formed on the first rigid carrier substrate; performing a first cutting step to cut through the first de-bonding areas; separating the first rigid carrier substrate from the first de-bonding areas; removing the first rigid carrier substrate from the first de-bonding areas; and performing a second cutting step to cut through the second de-bonding areas; separating and removing the second rigid carrier substrate from the second de-bonding areas.

Abstract: A sensing apparatus including a first scan line, a second scan line, a readout line, a first sensing device and a second sensing device is provided. The first sensing device is coupled to the first scan line and the readout line, and senses a first energy, and outputs a first readout signal corresponding to the first energy to the readout line in response to a first scan signal on the first scan line. The first sensing device is reset in response to the first scan signal and a reference signal on the readout line. The first sensing device includes a first reset unit configured for resetting the first sensing device, where a first terminal of the first reset unit is coupled to the first scan line, and a control terminal of the first reset unit is coupled to the readout line. A driving method thereof is also provided.

Abstract: Disclosed is a non-planar energy transducer, including a substrate and a switching device disposed thereon. An elastomer having a periodic structure is disposed on the switching device. A bottom electrode is conformally disposed on the elastomer to electrically connect to the switching device. An energy conversion layer is conformally disposed on the bottom electrode, and a top electrode is conformally disposed on the energy conversion layer, wherein the top electrode connects to a positive voltage or a negative voltage.

Abstract: A sensing device including first and second scan lines, a readout line, first and second sensing units is provided. The first sensing unit is coupled to the first scan line, the second scan line, and the readout line and configured to sense a first energy. The first sensing unit outputs a first readout signal corresponding to the first energy to the readout line in response to a first scan signal on the first scan line. The second sensing unit is coupled to the second scan line and the readout line and configured to sense a second energy. The second sensing unit outputs a second readout signal corresponding to the second energy to the readout line in response to a second scan signal on the second scan line. The second scan signal works in cooperation with the first scan signal to reset the first sensing unit.

Abstract: The disclosure provides a method for fabricating the flexible electronic devices, including: providing a first rigid carrier substrate and a second rigid carrier substrate, wherein at least one flexible electronic device is formed between the first rigid carrier substrate and the second rigid carrier substrate, and a plurality of first de-bonding areas, a first flexible substrate, the flexible electronic device, a second flexible substrate, a plurality of second de-bonding areas and the second rigid carrier substrate are formed on the first rigid carrier substrate; performing a first cutting step to cut through the first de-bonding areas; separating the first rigid carrier substrate from the first de-bonding areas; removing the first rigid carrier substrate from the first de-bonding areas; and performing a second cutting step to cut through the second de-bonding areas; separating and removing the second rigid carrier substrate from the second de-bonding areas.

Abstract: A photoelectric element including a transparent bottom electrode, a photosensitive layer, a first electrode, a second electrode and a transparent top electrode is provided. The photosensitive layer is located above the transparent bottom electrode. The first electrode and the second electrode are disposed on the photosensitive layer. The transparent top electrode is located above the photosensitive layer.

Abstract: A manufacturing method for a semiconductor structure, and a pixel structure and a manufacturing method for the same are provided. The manufacturing method for the semiconductor structure includes following steps. A substrate is provided. A first conductive layer is formed and patterned by using a first mask patterned. A first material film, including a first semiconductor layer, is formed and patterned by using a second mask. A second conductive layer is formed and patterned by using a third mask. A second material film, including a first dielectric layer, a second semiconductor layer and a second dielectric layer, is formed and patterned with using a fourth mask. The second dielectric layer is pattern by using a fifth mask. A third material film, including a third conductive layer, is formed and patterned by using a sixth mask.

Abstract: A vertical thin film transistor (TFT) structure allows for a channel length to be scaled down, below that allowed by lateral TFT structures, to nanoscale (i.e., below 100 nm). However, while reducing the channel length, short-channel effects have been found in previous VTFT structures. Aspects of the new vertical TFT structure allow for the suppression of some of the short-channel effects. Advantageously, the capability of defining nanoscale channel length with short-channel effect suppression allows for p-channel vertical TFTs, where previously these were impractical. Furthermore, in aspects of the vertical TFT structure, the gate electrode is entirely vertical and by eliminating the horizontal overlap of the gate electrode over the drain electrode that present in earlier vertical TFT structures, parasitic gate-to-drain capacitance is eliminated.