Abstract: A capacitor includes a stack. The stack has a first metallic layer formed over a substrate, an insulator formed over the first metallic layer, and a second metallic layer formed over the insulator. The first metallic layer has at least one high domain and at least one low domain, where a surface of the substrate in the at least one low domain has a height that is lower than a surface of the substrate in the at least one high domain.

Abstract: A capacitor includes a stack. The stack has a first metallic layer formed over a substrate, an insulator formed over the first metallic layer, and a second metallic layer formed over the insulator. The first metallic layer has at least one high domain and at least one low domain, where a surface of the substrate in the at least one low domain has a height that is lower than a surface of the substrate in the at least one high domain.

Abstract: Capacitors include a stack that has a first metallic layer formed over a substrate with at least one high domain and at least one low domain, an insulator formed over the first metallic layer, and a second metallic layer formed over the insulator. A bottom contact is formed in the substrate having a top surface that is even with a top surface of the substrate in the at least one high domain. A cap layer is formed directly on the substrate in the high domains, under the stack.

Abstract: Embodiments are directed to a method of forming a semiconductor device and resulting structures having a hard masks for sidewall image transfer (SIT) block patterning. The method includes forming a first hard mask on a substrate. Spacers are formed on the first hard mask, and a second hard mask is formed over the spacers. The second hard mask and a portion of the first hard mask are concurrently removed by the same hard mask removal process to expose a surface of the substrate. After concurrently removing the second hard mask and portions of the first hard mask, the heights of the spacers are substantially equal.

Abstract: Methods of forming capacitors include forming a self-assembled pattern of periodic first and second domains using first and second block copolymer materials over a substrate. The second block copolymer material is etched away. Material from the substrate is etched based on a pattern defined by the first block copolymer material to form cavities in the substrate. A capacitor stack is conformally deposited over the substrate, such that the capacitor stack is formed on horizontal surfaces of the substrate and vertical surfaces of the cavities.

Abstract: Capacitors include a stack that has a first metallic layer formed over a substrate with at least one high domain and at least one low domain, an insulator formed over the first metallic layer, and a second metallic layer formed over the insulator. A bottom contact is formed in the substrate having a top surface that is even with a top surface of the substrate in the at least one high domain. A cap layer is formed directly on the substrate in the high domains, under the stack.

Abstract: Embodiments are directed to a method of forming a semiconductor device and resulting structures having a hard masks for sidewall image transfer (SIT) block patterning. The method includes forming a first hard mask on a substrate. Spacers are formed on the first hard mask, and a second hard mask is formed over the spacers. The second hard mask and a portion of the first hard mask are concurrently removed by the same hard mask removal process to expose a surface of the substrate. After concurrently removing the second hard mask and portions of the first hard mask, the heights of the spacers are substantially equal.

Abstract: Capacitors and methods of forming the same include forming a self-assembled pattern of periodic first and second domains using first and second block copolymer materials over a substrate. The second block copolymer material is etched away. Material from the substrate is etched based on a pattern defined by the first block copolymer material to form cavities in the substrate. A capacitor stack is conformally deposited over the substrate, such that the capacitor stack is formed on horizontal surfaces of the substrate and vertical surfaces of the cavities.

Abstract: Methods of forming capacitors include forming a self-assembled pattern of periodic first and second domains using first and second block copolymer materials over a substrate. The second block copolymer material is etched away. Material from the substrate is etched based on a pattern defined by the first block copolymer material to form cavities in the substrate. A capacitor stack is conformally deposited over the substrate, such that the capacitor stack is formed on horizontal surfaces of the substrate and vertical surfaces of the cavities.

Abstract: Capacitors and methods of forming the same include forming a self-assembled pattern of periodic first and second domains using first and second block copolymer materials over a substrate. The second block copolymer material is etched away. Material from the substrate is etched based on a pattern defined by the first block copolymer material to form cavities in the substrate. A capacitor stack is conformally deposited over the substrate, such that the capacitor stack is formed on horizontal surfaces of the substrate and vertical surfaces of the cavities.

Abstract: Embodiments are directed to a method of forming a semiconductor device and resulting structures having a hard masks for sidewall image transfer (SIT) block patterning. The method includes forming a first hard mask on a substrate. Spacers are formed on the first hard mask, and a second hard mask is formed over the spacers. The second hard mask and a portion of the first hard mask are concurrently removed by the same hard mask removal process to expose a surface of the substrate. After concurrently removing the second hard mask and portions of the first hard mask, the heights of the spacers are substantially equal.

Abstract: Embodiments are directed to a method of forming a semiconductor device and resulting structures having a hard masks for sidewall image transfer (SIT) block patterning. The method includes forming a first hard mask on a substrate. Spacers are formed on the first hard mask, and a second hard mask is formed over the spacers. The second hard mask and a portion of the first hard mask are concurrently removed by the same hard mask removal process to expose a surface of the substrate. After concurrently removing the second hard mask and portions of the first hard mask, the heights of the spacers are substantially equal.