Abstract: The present invention relates to a process for the preparation of nitrides of the formula Ga1-xInxN, where 0.01?x?1, in which one or more compounds of the general formula, M(NR2)3, where all R, independently of one another, are H, linear or branched —C1-8-alkyl or —SiRx2, where Rx is linear or branched —C1-8-alkyl, and M is Ga, In or Ga1-xInx, are reacted with ammonia, where the one or more compounds M(NR2)3 are selected in such a way that the ratio 1?x Ga to x In also applies in these compounds.