Patents by Inventor Isabel Y. Yang

Isabel Y. Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of controlling floating body effects in an asymmetrical SOI device
    Publication number: 20040173847
    Abstract: High performance asymmetric transistors including controllable diode characteristics at the source and/or drain are developed by supplying impurities with high accuracy of location by angled implants in a trench or diffusion from a solid body formed as a sidewall of doped material. High concentration gradient of impurities to support high performance is achieved by providing for reduced heat treatment after the impurity is supplied in order to limit diffusion previously necessary to achieve the desired location of impurity structures. Damascene or quasi-Damascene gate structures are also provided for high dimensional uniformity, increased manufacturing yield and structural integrity of the transistor.
    Type: Application
    Filed: March 22, 2004
    Publication date: September 9, 2004
    Inventors: James W. Adkisson, Michael J. Hargrove, Lyndon R. Logan, Isabel Y. Yang
  • Method of controlling floating body effects in an asymmetrical SOI device
    Patent number: 6756637
    Abstract: High performance asymmetric transistors including controllable diode characteristics at the source and/or drain are developed by supplying impurities with high accuracy of location by angled implants in a trench or diffusion from a solid body formed as a sidewall of doped material. High concentration gradient of impurities to support high performance is achieved by providing for reduced heat treatment after the impurity is supplied in order to limit diffusion previously necessary to achieve the desired location of impurity structures. Damascene or quasi-Damascene gate structures are also provided for high dimensional uniformity, increased manufacturing yield and structural integrity of the transistor.
    Type: Grant
    Filed: July 6, 2001
    Date of Patent: June 29, 2004
    Assignee: International Business Machines Corporation
    Inventors: James W. Adkisson, Michael J. Hargrove, Lyndon R. Logan, Isabel Y. Yang
  • Anti-spacer structure for self-aligned independent gate implantation
    Patent number: 6531365
    Abstract: A method for improving the gate activation of metal oxide semiconductor field effect transistor (MOSFET) structures are provided.
    Type: Grant
    Filed: June 22, 2001
    Date of Patent: March 11, 2003
    Assignee: International Business Machines Corporation
    Inventors: Omer H. Dokumaci, Bruce B. Doris, Peter Smeys, Isabel Y. Yang
  • Method of controlling floating body effects in an asymmetrical SOI device
    Publication number: 20030006459
    Abstract: High performance asymmetric transistors including controllable diode characteristics at the source and/or drain are developed by supplying impurities with high accuracy of location by angled implants in a trench or diffusion from a solid body formed as a sidewall of doped material. High concentration gradient of impurities to support high performance is achieved by providing for reduced heat treatment after the impurity is supplied in order to limit diffusion previously necessary to achieve the desired location of impurity structures. Damascene or quasi-Damascene gate structures are also provided for high dimensional uniformity, increased manufacturing yield and structural integrity of the transistor.
    Type: Application
    Filed: July 6, 2001
    Publication date: January 9, 2003
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: James W. Adkisson, Michael J. Hargrove, Lyndon R. Logan, Isabel Y. Yang
  • ANTI-SPACER STRUCTURE FOR SELF-ALIGNED INDEPENDENT GATE IMPLANTATION
    Publication number: 20020197839
    Abstract: A method for improving the gate activation of metal oxide semiconductor field effect transistor (MOSFET) structures are provided.
    Type: Application
    Filed: June 22, 2001
    Publication date: December 26, 2002
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Omer H. Dokumaci, Bruce B. Doris, Peter Smeys, Isabel Y. Yang